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Is Now Part of
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD117
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW300µs, Duty Cycle2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 100 V
VCEO Collector-Emitter Voltage - 100 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 2 A
ICP Collector Current (Pulse) - 4 A
IB Base Current - 50 mA
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co n dition Min. Max. Units
VCEO (sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 - 100 V
ICEO Collector Cut-off Current VCE = - 50V, IB = 0 - 20 µA
ICBO Collector Cut-off Current VCB = - 100V, IE = 0 - 20 µA
IEBO Emitt e r Cut- o ff Current VEB = - 5V, IC = 0 - 2 m A
hFE *DC Current Gain VCE = - 3V, VEB = - 0.5A
VCE = - 3V, VEB = - 2A
VCE = - 3V, IC = - 4A
500
1000
200 12K
VCE(sat) *Collect or-Em i tter Saturation Volt age IC = -2A, IB = - 8m A
IC = - 4A, IB = - 40mA - 2
- 3 V
V
VBE(sat) *Base-Emi tter Saturation Voltage IC = - 4A, IB = - 40mA - 4 V
VBE(on) *Base-Emitter ON Voltage VCE = - 3A, IC = - 2A - 2.8 V
fT Current Gain Bandwidth Product VCE = -10V, IC = - 0.75A 25 MHz
Cob Output Capacitance VCB = - 10V, IE = 0
f= 0.1MHz 200 pF
MJD117
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP117
R
110
k
R
20.6
k
Equivalent Circuit
B
E
C
R1 R2
1.Base 2.Collector 3.Emitter
D-PAK I-PAK
11
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD117
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
-0.01 -0.1 -1 -10
10
100
1000
10000 VCE = - 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTO R CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat ) , VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
0.1
1
10
VCC= - 30V
IC=250IB
tD
tR
tR, tD(µs), TURN ON TIME
IC[A], COLLE C T OR CURREN T
-0.01 -0.1 -1 -10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[µs], TURN OFF TIME
IC[A], COLLE C T OR CURREN T
-0.01 -0.1 -1 -10 -100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
-0.01
-0.1
-1
-10
5ms
100µs
1ms
DC
IC[A ], CO LL ECT O R CURRENT
VCE[V], COLLECTOR-EMIT T ER VOLTAGE
©2001 Fairchild Semiconductor Corporation
MJD117
Rev. A2, June 2001
Typical Characteristics (Continued)
Figure 7. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJD117
Dimensions in Millimeters
6.60 ±0.20
2.30 ±0.10
0.50 ±0.10
5.34 ±0.30
0.70 ±0.20
0.60 ±0.20
0.80 ±0.20
9.50 ±0.30
6.10 ±0.20
2.70 ±0.20 9.50 ±0.30
6.10 ±0.20
2.70 ±0.20
MIN0.55
0.76 ±0.10 0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
6.60 ±0.20
0.76 ±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89 ±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGH TS, NOR THE RIGHTS OF OT HERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all su ch trademarks .
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a lif e support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Prod uct Statu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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