BCM846S NPN Silicon AF Transistor Array * Precision matched transistor pair: IC 10% 4 5 6 * For current mirror applications 1 * Low collector-emitter saturation voltage 2 3 * Two (galvanic) internal isolated Transistors * Complementary type: BCM856S * BCM846S: For orientation in reel see package information below * Pb-free (RoHS compliant) package * Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type BCM846S Marking Pin Configuration Package 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 65 Collector-emitter voltage VCES 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 6 Collector current IC 100 Peak collector current, tp 10 ms ICM 200 Total power dissipation- Ptot 250 mW Junction temperature Tj 150 C Storage temperature Tstg V mA TS = 115 C 1 -65 ... 150 2011-10-05 BCM846S Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 140 K/W Values Unit Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)CEO 65 - - V(BR)CBO 80 - - V(BR)CES 80 - - V(BR)EBO 6 - - DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 A Collector-base breakdown voltage IC = 10 A, IE = 0 A Collector-emitter breakdown voltage IC = 10 A, VBE = 0 A Emitter-base breakdown voltage IE = 10 A, IC = 0 A Collector-base cutoff current A ICBO VCB = 30 V, IE = 0 A - - 0.015 VCB = 30 V, IE = 0 A, TA = 150 C - - 5 DC current gain-2) - hFE IC = 10 A, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 200 290 450 Collector-emitter saturation voltage2) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 300 IC = 100 mA, IB = 5 mA - 200 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 Base emitter saturation voltage2) VBEsat Base-emitter voltage-2) VBE(ON) IC Matching IB = 1 A, VCE1 = V CE2 = 1.0V IB = 100 A, VCE1 = VCE2 = 1.0V % -10 - 10 -10 - 10 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Puls test: t < 300s; D < 2% 2 2011-10-05 BCM846S Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. fT - 250 - MHz Ccb - 0.95 - pF Ceb - 9 - h11e - 4.5 - k h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - S F - - 10 dB AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k 3 2011-10-05 BCM846S DC current gain hFE = (IC) Collector-emitter saturation voltage VCE = 5V IC = (VCEsat ), hFE = 20 EHP00365 10 3 h FE 5 100 C EHP00367 10 2 mA C 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 0 10 -1 mA 10 2 0 0.1 0.2 0.4 0.3 C Base-emitter saturation voltage Output characteristics IC = (VCE), IC = (VBEsat), hFE = 20 IB = parameter EHP00364 10 2 V 0.5 VCEsat 15 mA C mA IB = 36 uA 11 10 IC 10 1 IB = 40 uA 12 100 C 25 C -50 C 5 IB = 32 uA 9 IB = 28 uA 8 IB = 24 uA 7 IB = 20 uA 6 10 0 IB = 16 uA 5 IB = 12 uA 4 5 3 IB = 8 uA 2 IB = 4uA 1 10 -1 0 0.2 0.4 0.6 0.8 V 0 0 1.2 1 2 3 V 5 VCE V BEsat 4 2011-10-05 BCM846S Collector current IC = (VBE) Collector cutoff current ICBO = (TA) VCBO = 30 V 10 -1 A 5V EHP00381 10 4 nA 1V CB0 10 -2 10 3 IC 5 10 -3 max 10 2 5 10 -4 typ 10 1 5 10 -5 10 0 5 10 -6 0.4 0.5 0.6 0.7 0.8 V 10 -1 1 0 50 100 VBE TA Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) EHP00363 10 3 12 pF MHz 5 10 CCB(CEB ) fT 150 C 10 2 9 8 7 6 5 5 CEB 4 3 2 1 10 1 10 -1 5 10 0 5 10 1 mA 0 0 10 2 CCB 4 8 12 16 V 22 VCB(VEB C 5 2011-10-05 BCM846S Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 300 mW K/W 250 10 2 RthJS Ptot 225 200 175 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 125 100 10 0 75 50 25 0 0 15 30 45 60 90 105 120 C 75 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = (t p) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2011-10-05 BCM846S Definition of matching IC = (IC2-IC1)/IC1 $ # 6 " 6 ! 1> 1? 1? 8 ? A 8 ? A 7 2011-10-05 Package SOT363 BCM846S Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 8 2011-10-05 BCM846S Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2011-10-05