Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 11
1Publication Order Number:
BAS40−04LT1/D
BAS40-04LT1G,
SBAS40-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR40 V
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF225
1.8
mW
mW/C
Operating Junction and Storage
Temperature Range
TJ, Tstg −55 to +150 C
Forward Continuous Current IFM 120 mA
Single Forward Current
t v 1 s
t v 10 ms
IFSM 200
600
mA
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
RqJA 508
311
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
SOT−23 (TO−236)
CASE 318
STYLE 11
40 VOLTS
SCHOTTKY BARRIER DIODES
MARKING DIAGRAM
CB = Specific Device Code
M = Date Code*
G= Pb−Free Package
ANODE
1
CATHODE
2
3
CATHODE/ANODE
BAS40−04LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
CB MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS40−04LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAS40−04LT1G, SBAS40−04LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 40 −
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−5.0
pF
Reverse Leakage
(VR = 25 V)
IR
−1.0
mA
Forward Voltage
(IF = 1.0 mA)
VF
−380
mV
Forward Voltage
(IF = 10 mA)
VF
−500
mV
Forward Voltage
(IF = 40 mA)
VF
−1.0
V
100
0 0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0 10 15 20 25
3.5
0
VR, REVERSE VOLTAGE (VOLTS)
3.0
1.0
0.5
0
CT, CAPACITANCE (pF)
5.0 10 15 40
IF, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40C
25C
TA = 150C
25C
IR, REVERSE CURRENT (A)
0.8
-55C
125C
150C
100
2520
1.5
2.0
2.5
0.6 0.7
125C
85C
30 35
BAS40−04LT1G, SBAS40−04LT1G
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
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BAS40−04LT1/D
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