DSEC16-06A
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED
1 2 3
Part number
DSEC16-06A
Backside: cathode
FAV
rr
tns30
RRM
10
600
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20120705bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSEC16-06A
n
s
4
A
T
VJ
=°C
reverse recovery time
A
6
30
90
n
s
I
RM
max. reverse recovery current
I
F
=A;10
25
T=100°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V100
T
VJ
=°C25
T=100°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
2.10
R2.5 K/
W
R
min.
10
V
RSM
V
60T = 25°C
VJ
T = °C
VJ
m
A
0.25V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
135
P
tot
60
W
T = 25°C
C
RK/
W
10
600
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
2.32
T = 25°C
VJ
150
V
F0
V
1.03T = °C
VJ
175
r
F
25.1 m
Ω
V
1.42T = °C
VJ
I = A
F
V
10
1.68
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
6
j
unction capacitance V = V400 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
50
A
600
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
600
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20120705bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSEC16-06A
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a common
cathode/anode configuration with a non-isolated backside, the current capability can be increased by connecting the backside.
Ratings
XXXXXX
YYWW Z
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
Package
T
VJ
°C
M
D
Nm0.6
mounting torque 0.4
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
175-55
TO-220
Similar Part Package Voltage class
DSEC16-06AC ISOPLUS220AB (3) 600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSEC16-06A 475130Tube 50DSEC16-06AStandard
threshold voltage V1.03
mΩ
V
0 max
R
0 max
slope resistance * 22
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20120705bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSEC16-06A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
1 2 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20120705bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSEC16-06A
200 600 10000 400 800
70
80
90
100
110
120
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
04080120160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
200 600 10000 400 800
0
10
20
30
40
0001001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
30
K
f
T
VJ
[°C]
t[s]
VFR
[V]
I
RM
[A]
Q
r
[μC]
I
F
[A]
V
F
id-]V[
F
/dt [A/μs]
trr
[ns]
t
fr
[μs]
Z
thJC
[K/W]
-di
F
/dt [A/μs]
-di
F
/dt [A/μid-]s
F
/dt [A/μs]
V
FR
t
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
I
RM
Q
r
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C I
F
= 20 A
I
F
= 10 A
I
F
=5 A
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
T
VJ
= 100°C
I
F
=10A
I
F
= 20 A
I
F
= 10 A
I
F
=5 A
T
VJ
= 100°C
V
R
= 300 V
T
VJ
=100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
Constants for Z
thJC
calculation:
iR
thi
[K/W] t
i
[s]
1 1.449 0.0052
2 0.5578 0.0003
3 0.4931 0.0169
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20120705bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved