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Dear Customer,
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tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
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1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
1.2 Features
■Built-in bias resistors
■Simplifies circuit design
■Reduces component count
■Reduces pick and place cost
1.3 Applications
■Low current peripheral driver
■Control of IC inputs
■Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
PEMD17; PUMD17
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 24 January 2005 Product data sheet
Table 1: Product overview
Type number Package PNP/PNP
complement NPN/NPN
complement
Philips JEITA
PEMD17 SOT666 - PEMB17 PEMH17
PUMD17 SOT363 SC-88 PUMB17 PUMH17
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IOoutput current (DC) - - 100 mA
R1 bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.37 0.47 0.57
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 2 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3: Pinning
Pin Description Simplified outline Symbol
1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1
001aab555
6 45
1 32
65 4
123
R2
TR1 TR2
R1
R2 R1
006aaa143
Table 4: Ordering information
Type number Package
Name Description Version
PEMD17 - plastic surface mounted package; 6 leads SOT666
PUMD17 SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking codes
Type number Marking code[1]
PEMD17 5N
PUMD17 D9*
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 3 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
5. Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VIinput voltage TR1
positive - +40 V
negative - −10 V
VIinput voltage TR2
positive - +10 V
negative - −40 V
IOoutput current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot total power dissipation Tamb ≤ 25 °C
SOT363 [1] - 200 mW
SOT666 [1] [2] - 200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C
SOT363 [1] - 300 mW
SOT666 [1] [2] - 300 mW
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 4 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient Tamb ≤ 25 °C
SOT363 [1] - - 625 K/W
SOT666 [1] [2] - - 625 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient Tamb ≤ 25 °C
SOT363 [1] - - 416 K/W
SOT666 [1] [2] - - 416 K/W
Table 8: Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
ICBO collector-base cut-off
current VCB = 50 V; IE = 0 A - - 100 nA
ICEO collector-emitter
cut-off current VCE = 30 V; IB = 0 A - - 1 µA
VCE = 30 V; IB = 0 A;
Tj= 150 °C--50µA
IEBO emitter-base cut-off
current VEB = 5 V; IC = 0 A - - 110 µA
hFE DC current gain VCE = 5 V; IC = 5 mA 60 - -
VCEsat collector-emitter
saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.7 1.2 V
VI(on) on-state input voltage VCE = 0.3 V; IC = 2 mA 4 2.7 - V
R1 bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.37 0.47 0.57
Cccollector capacitance VCB = −10 V; IE = ie = 0 A;
f=1MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 5 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
IC (mA)
10−1102
101
006aaa184
102
10
103
hFE
1
(1)
(2)
(3)
006aaa185
IC (mA)
10−1102
101
102
VCEsat
(mV)
10
(1)
(2)
(3)
IC (mA)
10−1102
101
006aaa186
10
1
102
VI(on)
(V)
10−1
(1)
(2)
(3)
006aaa187
IC (mA)
10−210110−1
1
10
VI(off)
(V)
10−1
(1)
(3)
(2)
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 6 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 5. TR2 (PNP): DC current gain as a function of
collector current; typical values Fig 6. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR2 (PNP): On-state input voltage as a function
of collector current; typical values Fig 8. TR2 (PNP): Off-state input voltage as a function
of collector current; typical values
IC (mA)
−10−1−102
−10−1
006aaa208
102
10
103
hFE
1
(1) (2)
(3)
006aaa209
IC (mA)
−10−1−102
−10−1
−102
VCEsat
(mV)
−10
(1)
(2)
(3)
IC (mA)
−10−1−102
−10−1
006aaa210
−10
−1
−102
VI(on)
(V)
−10−1
(1) (2)
(3)
006aaa211
IC (mA)
−10−2−10−1−10−1
−1
−10
VI(off)
(V)
−10−1
(1)
(2)
(3)
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 7 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
8. Package outline
Fig 9. Package outline SOT363 (SC-88)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
04-11-08
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 8 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
Fig 10. Package outline SOT666
UNIT bpcDE e1HELpw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
01-08-27
04-11-08
IEC JEDEC JEITA
mm 0.27
0.17 0.18
0.08 1.7
1.5 1.3
1.1 0.5
e
1.0 1.7
1.5 0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface mounted package; 6 leads SOT666
YS
wMA
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 9 of 12
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
9. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 4000 10000
PEMD17 SOT666 4 mm pitch, 8 mm tape and reel - -115 -
PUMD17 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - -135
PUMD17 SOT363 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - -165
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 10 of 12
10. Revision history
Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PEMD17_PUMD17_3 20050124 Product data sheet - 9397 750 14367 PUMD17_2
Modifications: •This data sheet is an enhancement of data sheet PUMD17_2.
•The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
•Type PEMD17 added
•Table 8 Characteristics: Vi(on) input-on voltage and Vi(off) input-off voltage renamed to VI(on)
on-state input voltage and VI(off) off-state input voltage
•Figure 1,2,3,4,5,6,7 and 8 electrical graphs for TR1 (NPN) and TR2 (PNP) added
•Table 9 Packing information added
PUMD17_2 20040422 Product specification - 9397 750 13099 PUMD17_1
PUMD17_1 20031016 Product specification - 9397 750 11866 -
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
9397 750 14367 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 03 — 24 January 2005 11 of 12
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.Date of release: 24 January 2005
Document number: 9397 750 14367
Published in The Netherlands
Philips Semiconductors PEMD17; PUMD17
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information . . . . . . . . . . . . . . . . . . . . 11
