AO This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features e Polysilicon gate Improved stability and reliability @ No secondary breakdown Excellent ruggedness SR? MOS [FE FIELD EFFECT POWER TRANSISTOR Ultra-fast switching Independent of temperature Voltage controlled High transconductance Low input capacitance - Reduced drive requirement Excellent thermal stability Ease of paralleling IRF 130,131 D86DL2,K2 14.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.18 0 POINT -065(1.65) MAX, 2 CAST TEMP. REFERENCE N-CHANNEL S CASE STYLE TO-204AA (TO-3) OIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47) DIA. + 0.043(1.09) oy, | be 0.038(0.97) 1.050(26.68) Da y~ .358(9.09} MAX -F SEATING PLANE .426(10.82) MIN. MAX.~--*) 0.675(17.15) 0.650(16.57) t 1.197(30.40) 1.177(29.90) S ~~ 1.573(39.96) MAX. SS 0.225(5.72) = DRAIN 0,162(4.09) DIA. 9.205(5.21) (CASE) 0.15(3.84) 2HOLES 0.440(11.18) 0.420(10.67) maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF 130/D86DL2 IRF131/D86DK2 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Ras = 1MQ VpaGr 100 60 Volts Continuous Drain Current @ To = 25C Ip 14 14 A Pulsed Drain Current IDM 56 56 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 w/c Operating and Storage Junction Temperature Range Ty, Tsta ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rgsc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rasa 30 30 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 125 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP MAX | UNIT | off characteristics | Drain-Source Breakdown Voltage IRF130/D86DL2 BVpss 100 _ _ Volts (Ves = OV, Ip = 250 uA) IRF131/D86DK2 60 _ _ Zero Gate Voltage Drain Current Ipss (Vos = Max Rating, Vas = OV, To = 25C) _ _ 250 LA (Vpg = Max Rating, 0.8, Vgg = OV, Tc = 125C) 1000 Gate-Source Leakage Current (Ves = 20V) lass +100 nA on characteristics* Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 uA) On-State Drain Current I 14 _ _ A (Vas = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (Vas = 10V, Ip = 8A) Rps(ONn) _ 0.15 0.18 Ohms Forward Transconductance (Vps = 10V, Ip = 8A) Ots 3.2 4.0 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 650 800 pF Output Capacitance Vos = 25V Coss _ 240 500 pF Reverse Transfer Capacitance f=1 MHz Crss _ 55 150 pF switching characteristics Turn-on Delay Time Vps = 30V td(on) _ 15 ns Rise Time Ip = 8A, Vas = 15V tr _ 55 _ ns Turn-off Delay Time RGeEN = 509, R@g = 12.50 | tao) _ 30 _ ns Fall Time (Res (EQuiv.) = 100) tt _ 10 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ ~_ 14 A Pulsed Source Current Ism ~ _ 56 A Diode Forward Voltage _ (To = 28C, Vag = OV, Is = 14A) VsD 0 25 | Volts Reverse Recovery Time tee _ 210 _ ns (Ig = 14A, dig/dt = 100A/usec, To = 125C) QrrR _ 1.4 pc *Pulse Test: Pulse width = 300 ys, duty cycle = 2% 100 80 60 40 20 b Ono MAY BE LIMITED BY R Ip. DRAIN CURRENT (AMPERES) N bh awo Th IRF430/O86DL2 1 2 4 6 810 20 40 6080100 200 Vpg, DRAIN~SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 Rosion) CONDITIONS: Ip = 8.0 A, Vgg = 10V CONDITIONS: Ip = 250uA, Vog = Vas V3siTH) Rostony AND Vegeta) NORMALIZED 40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Roygion; AND Vesiru) VS. TEMP. 126