1N914(A)(B)
500mW 100 Volt
Silicon Epitaxial
Diodes
DO-35
)HDWXUHV
• Low Current Leakage
• Compression Bond Construction
• Low Cost
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A --- .166 --- 4.2
B --- .079 --- 2.00
C --- .020 --- .52
D 1.000 --- 25.40 ---
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A
B
C
D
D
Cathode
Mark
omponents
20736 Marilla Street Chatsworth
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MCC
• Operating Temperature: -55OC to +150OC
• Storage Temperature: -55OC to +150OC
• Maximum Thermal Resistance; 300OC/W Junction To Ambient
Electrical Characteristics @ 25OC Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage VRRM 100V
Average Rectified
Forward Current IO 200mA
Power Dissipation PD 500mW
Junction Temperature TJ 150OC
Peak Forward Surge
Current
IFSM
1.0A
4.0A
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
Minimum Breakdown
Voltage VR 100V
75V IR=100uA,
IR=5.0uA
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
1N914 B
1N914 B
VF
1.0V
720mV
TJ = 25OC
IFM = 10mA;
IFM
= 20mA;
IFM
= 100mA;
IFM
= 5.0mA;
Maximum Reverse
Current
IR
25nA
5.0uA
50uA
VR=20V, TJ=25OC,
VR=75V, TJ=25OC,
VR=20V, TJ=150OC
Typical Junction
Capacitance CJ 4.0pF Measured at 1.0MHz,
VR=0V
Reverse Recovery
Time Trr 4.0nS IF=10mA
VR = 6V
RL=100 Ù, Irr=1.0mA
*Pulse test: Pulse width 300 usec, Duty cycle 2%
www.mccsemi.com
Revision: 3 2002/12/31
Admissable Power Dissipation - MilliWatts versus
Ambient Temperature -OC
Figure 2
Forward Derating Curve
0 175
50
75
100
125
0
100
200
300
Single Phase, Half Wave
60Hz Resistive or Inductive Load
MilliWatts
O
C
150
400
500
600
Junction Capacitance - pF versus
Reverse Voltage - Volts
Figure 3
Junction Capacitance
.1 .2 1 .4 2 10 20 40
4 100 200
.1
.2
.6
1
2
10
pF
Volts
6
4
.4
400 1000
TJ=25OC
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical Forward Characteristics
4
6
20
10
MilliAmps
.4 .6 .8 1.0 1.2 1.4
.01
.02
.04
.06
.1
.2
.4
.6
1
2
25OC
Volts
1N914
1N914A
1N914B
1N914(A)(B) MCC
www.mccsemi.com
Revision: 3 2002/12/31
1 1004
0
200
400
600
8
Figure 5
Peak Forward Surge Current
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
MilliAmps
Cycles
2
6
10 20 60
80
40
800
1000
1200
Figure 4
Typical Reverse Characteristics
Instantaneous Reverse Leakage Current - NanoAmperes
versus Junction Temperature - C
TJ
40
60
200
100
NanoAmp
20
12040 60 80 100
.1
.2
.4
.6
1
2
4
6
10
20
400
600
1000
140
1N914(A)(B)
O
MCC
www.mccsemi.com
Revision: 3 2002/12/31
