SEMITRANS®2
Trench IGBT Modules
SKM 100GB176D
Features
!"
# $ %
Typical Applications*
& ' ()( *
)(+ &
,! $ -
GB
Absolute Maximum Ratings .(/" '
Symbol Conditions Values Units
IGBT
0 .( / 2)++
%0 2(+ / .( / 2.( &
3+ / 4+ &
%56 %56.$% 2(+ &
7 8 .+
2.++ 9 7 : .+ 9
; 2)++
0 2.( / 2+ <
Inverse Diode
%=0 2(+ / .( / 2++ &
3+ / )+ &
%=56 %=56.$%= 2(+ &
%=6 2+ 9 - 0 2(+ / ).+ &
Module
%56 .++ &
0 * >+ --- ?2(+ /
* >+ --- ?2.( /
&" 2 - >+++
Characteristics .(/" '
Symbol Conditions min. typ. max. Units
IGBT
7 7 " % @ & (". ("3 #">
% 7 +" 0 .( / @ &
+ 0 .( / 2 2".
0 2.( / +"4 2"2
7 2( 0 .(/ 2@ 2#") A
0 2.(/ .+ .> A
% )( &" 7 2( 0 .(/- . .">(
0 2.(/- ."> ."4
(") =
.(" 7 + 2 6B +".3 =
+".. =
C77*3D?2( #.+
57 0 .( / 3"( E
' .3+
57 >". A 2.++ >+
'D' 2#3+ &D< % )(& >> F
' 57 >". A 0 2.( / #3+
'D' >4+ &D< 7*2( 2>+
G .+ .3"( F
50* %7H +".> IDJ
SKM 100GB176D
1 28-06-2010 GIL © by SEMIKRON
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SEMITRANS®2
Trench IGBT Modules
SKM 100GB176D
Features
!"
# $ %
Typical Applications*
& ' ()( *
)(+ &
,! $ -
GB
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
= %= )( &9 7 + 0 .( /- 2"# 2"4
0 2.( /- 2"# 2"4
=+ 0 .( / 2"2 2"@
0 2.( / +"4 2"2
=0 .( / #") 3 A
0 2.( / 4"@ 22 A
%556 %= )( & 0 2.( / )3"( &
C 'D' 2#(+ &D< G .+ .4"# <
7 *2( 9 2.++ .2"> F
50*K '' +">( IDJ
Module
G @+
5L?L -" * .( / +")( A
2.( / 2 A
5* ' +"+( IDJ
6 M 6# @ ( N
6 6( ."( ( N
2#+
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 100GB176D
2 28-06-2010 GIL © by SEMIKRON
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SEMITRANS®2
Trench IGBT Modules
SKM 100GB176D
Features
!"
# $ %
Typical Applications*
& ' ()( *
)(+ &
,! $ -
GB
Zth
Symbol Conditions Values Units
Zth(j-c)l
5 2 2#+ MDJ
5 . #+ MDJ
5 @ 2#"( MDJ
5 > @"( MDJ
2 +"2+(#
. +"++4
@ +"++22
> +"+++(
Zth(j-c)D
5 2 .)+ MDJ
5 . 2@4 MDJ
5 @ @) MDJ
5 > > MDJ
2 +"+>)(
. +"+2+>
@ +"++22
> +"+++@
SKM 100GB176D
3 28-06-2010 GIL © by SEMIKRON
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Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 100GB176D
4 28-06-2010 GIL © by SEMIKRON
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Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge
SKM 100GB176D
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UL Recognized File no. E 63 532
K #2
7H K #2
SKM 100GB176D
6 28-06-2010 GIL © by SEMIKRON
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