© 2003 IXYS All rights reserved DS99001(01/03)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 550 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ550 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C26A
IDM TC= 25°C, pulse width limited by TJM 104 A
IAR TC= 25°C26A
EAR TC= 25°C 50mJ
EAS 2.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 20 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 375 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
switching (UIS) rated
zMolding epoxies meet UL 94 V-0
flammability classification
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 550 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 0.23 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFETTM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
GS
VDSS = 550 V
ID25 = 26 A
RDS(on) = 0.23 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
IXFH 26N55Q
IXFT 26N55Q
(TAB)
Advanced Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N55Q
IXFT 26N55Q
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 16 22 S
Ciss 3000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 420 pF
Crss 120 pF
td(on) 17 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 ns
td(off) RG= 2.0 Ω (External), 50 ns
tf13 ns
Qg(on) 92 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 nC
Qgd 44 nC
RthJC 0.33 K/W
RthCK (TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 26 A
ISM Repetitive; pulse width limited by TJM 104 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 1.0 µC
IRM 10 A
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
