BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
Document Number: 88549
Revision: 07-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common Cathode Ultrafast Rectifier
FEATURES
Glass passivated chip junction
Ultrafast recovery times
Soft recovery characteristics
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 5 A x 2
VRRM 100 V, 150 V, 200 V
IFSM 55 A
trr 25 ns
VF0.895 V
TJ max. 150 °C
BYQ28E & UG10 BYQ28EF & UGF10
BYQ28EB & UGB10
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
PIN 1
PIN 2
K
HEATSINK
1
23
1
2
K
PIN 2
PIN 1
PIN 3
ITO-220AB
TO-263AB
123
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL UG10BCT UG10CCT UG10DCT
UNIT
BYQ28E-100 BYQ28E-150 BYQ28E-200
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Working peak reverse voltage VRWM 100 150 200 V
Maximum DC blocking voltage VDC 100 150 200 V
Maximum average forward rectified current at TC = 100 °C total device
per diode IF(AV)
10
5 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 55 A
Non-repetitive peak reverse current per diode at tp = 100 µs IRSM 0.2 A
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 kΩ VC 8 kV
Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min VAC 1500 V
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88549
Revision: 07-Jan-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage
per diode (1)
IF = 10 A
IF = 5 A
IF = 5 A
TJ = 25 °C
TJ = 25 °C
TJ = 150 °C
VF
1.25
1.10
0.895
V
Maximum reverse current per diode at
working peak reverse voltage
TJ = 25 °C
TJ = 100 °C IR 10
200 µA
Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM t
rr 25 ns
Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 20 ns
Maximum stored charge per diode IF = 2 A, dI/dt = 20 A/µs, VR = 30 V, Irr = 0.1 IRM Q
rr 9nC
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL UG10 UGF10 UGB10
UNIT
BYQ28E BYQ28EF BYQ28EB
Typical thermal resistance per diode, junction to ambient RθJA 50 55 50 °C/W
Typical thermal resistance per diode, junction to case RθJC 4.5 6.7 4.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB BYQ28E-200-E3/45 1.80 45 50/tube Tube
ITO-220AB BYQ28EF-200-E3/45 1.95 45 50/tube Tube
TO-263AB BYQ28EB-200-E3/45 1.77 45 50/tube Tube
TO-263AB BYQ28EB-200-E3/81 1.77 81 800/reel Tape reel
TO-220AB BYQ28E-200HE3/45 (1) 1.80 45 50/tube Tube
ITO-220AB BYQ28EF-200HE3/45 (1) 1.95 45 50/tube Tube
TO-263AB BYQ28EB-200HE3/45 (1) 1.77 45 50/tube Tube
TO-263AB BYQ28EB-200HE3/81 (1) 1.77 81 800/reel Tape reel
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
Document Number: 88549
Revision: 07-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
5
15
050 100 150
10
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
1
10
100
1100
10
T
C
= 105 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
100
10
1
0.1
0.01
0.2 0.4 0.81.40.6 1.0 1.2
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
1
10
100
1000
0.1
200 10040 60 80
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
0
50
25 50 75 100 125
10
20
30
Stored Charge/Reverse Recovery Time
(nC/ns)
40
Junction Temperature (°C)
t
rr
Q
rr
at 2 A, 20 A/µs
at 5 A, 50 A/µs
at 1 A, 100 A/µs
at 5 A, 50 A/µs
at 1 A, 100 A/µs
at 2 A, 20 A/µs
100
10
100
1
0.1 1 10
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88549
Revision: 07-Jan-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
TO-263AB
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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Revision: 12-Mar-12 1Document Number: 91000
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