AUIRF2907Z
VDSS 75V
RDS(on) max. 4.5m
ID (Silicon Limited) 170A
ID (Package Limited) 75A
Features
Advanced Planar Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications
1 2017-09-21
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 170
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 600
PD @TC = 25°C Maximum Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 270
EAS (Tested) Single Pulse Avalanche Energy Tested Value 690
IAR Avalanche Current See Fig.15,16, 12a, 12b A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
mJ
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.50
°C/W
RCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RJA Junction-to-Ambient ––– 62
TO-220AB
AUIRF2907Z
S
D
G
Base part number Package Type Standard Pack
Form Quantity
AUIRF2907Z TO-220 Tube 50 AUIRF2907Z
Orderable Part Number
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRF2907Z
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Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax, starting TJ = 25°C, L = 0.095mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.
I
SD ≤ 75A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting TJ = 25°C, L = 0.095mH, RG = 25, IAS = 75A, VGS =10V.
R
is measured at TJ of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.5 m VGS = 10V, ID = 75A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 180 ––– ––– S VDS = 10V, ID = 75A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250 VDS =75V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 180 270
nC
ID = 75A
Qgs Gate-to-Source Charge ––– 46 ––– VDS = 60V
Qgd Gate-to-Drain Charge ––– 65 VGS = 10V
td(on) Turn-On Delay Time ––– 19 –––
ns
VDD = 38V
tr Rise Time ––– 140 ––– ID = 75A
td(off) Turn-Off Delay Time ––– 97 ––– RG= 2.5
tf Fall Time ––– 100 ––– VGS = 10V
LD Internal Drain Inductance ––– 5.0 –––
nH
Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 13 ––– from package
and center of die contact
Ciss Input Capacitance ––– 7500 –––
pF
VGS = 0V
Coss Output Capacitance ––– 970 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 510 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 3640 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 650 ––– VGS = 0V, VDS = 60V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1020 ––– VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 75
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 680 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 75A ,VGS = 0V
trr Reverse Recovery Time ––– 41 61 ns TJ = 25°C ,IF = 75A ,VDD = 38V
Qrr Reverse Recovery Charge ––– 59 89 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
AUIRF2907Z
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Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Forward Transconductance
Vs. Drain Current
Fig. 1 Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current )
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
0 25 50 75 100 125 150
ID,Drain-to-Source Current (A)
0
50
100
150
200
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
AUIRF2907Z
4 2017-09-21
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 50 100 150 200
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 60V
VDS= 38V
VDS= 15V
ID= 90A
0.00.51.01.52.02.5
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
110100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
Limited by package
AUIRF2907Z
5 2017-09-21
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance
Vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
ID, Drain Current (A)
Limited By Package
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 90A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
R
1
R
1
R
2
R
2
C
C
Ci= iRi
Ci= iRi
Ri (°C/W) i (sec)
0.279 0.000457
0.221 0.003019
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6 2017-09-21
Fig 14. Threshold Voltage vs. Temperature
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 9.0A
13A
BOTTOM 75A
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
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7 2017-09-21
Fig 15. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRF2907Z
9 2017-09-21
TO-220AB package is not recommended for Surface Mount Application.
TO-220AB Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF2907Z
Lot Code
Part Number
IR Logo
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
AUIRF2907Z
10 2017-09-21
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level TO-220AB N/A
ESD
Machine Model Class M4 (+/- 425V)†
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)†
AEC-Q101-001
Charged Device Model Class C4 (+/- 1000V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
9/21/2017 Updated datasheet with corporate template.
Corrected typo error on package outline and part marking on page 9.
† Highest passing voltage.
