LMP8640
,
LMP8640-Q1
,
LMP8640HV
SNOSB28G –AUGUST 2010–REVISED NOVEMBER 2014
www.ti.com
Electrical Characteristics 2.7 V (1) (continued)
Unless otherwise specified, all limits ensured for at TA= 25°C, VS= V+– V-, VSENSE= +IN-(-IN), V+= 2.7 V, V−= 0 V, −2 V <
VCM < 76 V, RL= 10 MΩ. LMP8640 limits also apply to the LMP8640-Q1.
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
Fixed Gain LMP8640-T DC VSENSE = 67.5 mV, 950
LMP8640HV-T (5) CL= 30 pF,RL= 1MΩ
Fixed Gain LMP8640-F DC VSENSE =27 mV,
BW 450 kHz
LMP8640HV-F (5) CL= 30 pF, RL= 1MΩ
Fixed Gain LMP8640-H DC VSENSE = 13.5 mV, 230
LMP8640HV-H (5) CL= 30 pF ,RL= 1 MΩ
VCM =5 V, CL= 30 pF, RL= 1 MΩ,
LMP8640-T LMP8640HV-T VSENSE =100 mVpp,
SR Slew Rate (7)(5) 1.4 V/µs
LMP8640-F LMP8640HV-F VSENSE =40 mVpp,
LMP8640-H LMP8640HV-H VSENSE =20 mVpp,
RIN Differential Mode Input Impedance(5) 5 kΩ
VCM = 2.1 V 420 600
VCM = 2.1 V, Over Temperature 800
ISSupply Current µA
VCM =−2 V 2000 2500
VCM =−2 V, Over Temperature 2750
Maximum Output Voltage VCM = 2.1 V 2.65 V
LMP8640-T LMP8640HV-T 18.2
VCM = 2.1 V
VOUT LMP8640-F LMP8640HV-F
Minimum Output Voltage 40 mV
VCM = 2.1 V
LMP8640-H LMP8640HV-H 80
VCM = 2.1 V
CLOAD Max Output Capacitance Load(5) 30 pF
(7) The number specified is the average of rising and falling slew rates and measured at 90% to 10%.
7.7 Electrical Characteristics 5 V (1)
Unless otherwise specified, all limits ensured for at TA= 25°C, VS= V+– V-, VSENSE= +IN-(-IN), V+= 5 V, V−= 0 V, −2 V < VCM
< 76 V, RL= 10 MΩ. LMP8640 electrical limits also apply to the LMP8640-Q1 unless noted.
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VCM = 2.1 V -900 900
VOS Input Offset Voltage µV
VCM = 2.1 V, Over Temperature -1160 1160
TCVOS Input Offset Voltage Drift(4) (5) VCM = 2.1 V 2.6 µV/°C
VCM = 2.1 V, VSENSE = 0 V 13 21
IBInput Bias Current (6) µA
VCM = 2.1 V, Over Temperature,VSENSE = 0 V 28
eni Input Voltage Noise (5) f > 10 kHz 117 nV/√Hz
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ= TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ> TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using
statistical quality control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and
will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production
material.
(4) Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature
change.
(5) This parameter is ensured by design and/or characterization and is not tested in production.
(6) Positive Bias Current corresponds to current flowing into the device. Spec does not include input signal dependent currents on the
positive input of approximately Vsense / 5KΩdue to topology feedback action.
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