© Semiconductor Components Industries, LLC, 2017
August, 2018 − Rev. 12 1Publication Order Number:
BAT54XV2T1/D
BAT54XV2
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
•Extremely Fast Switching Speed
•Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Forward Current (DC) IF200 Max mA
Non−Repetitive Peak Forward
Current, tp < 10 msec IFSM 600 mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66% IFRM 300 mA
Thermal Resistance,
Junction−to−Ambient RJA 635 °C/W
Junction and Storage Temperature TJ, Tstg −55 to 125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−4 Minimum Pad.
30 VOLT
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE 2
ANODE
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SOD−523
CASE 502
1
2
1
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
BAT54XV2T1G SOD−523
(Pb−Free) 3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
JV = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
JVM G
G
BAT54XV2T5G SOD−523
(Pb−Free) 8000 / Tape &
Reel
SBAT54XV2T1G SOD−523
(Pb−Free) 3000 / Tape &
Reel
SBAT54XV2T5G SOD−523
(Pb−Free) 8000 / Tape &
Reel
BAT54XV2
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 A) V(BR)R 30 − − V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz) CT− 7.6 10 pF
Reverse Leakage
(VR = 25 V) IR− 0.3 2.0 A
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF−
−
−
−
−
0.22
0.28
0.35
0.39
0.46
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) Figure 1 trr − − 5.0 ns
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820
0.1 F
DUT
VR
100 H
0.1 F
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
t
rtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54XV2
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3
100
0.0 0.1
VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01 510152025
14
0VR, REVERSE VOLTAGE (VOLTS)
12
4
2
051015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
6
8
10
IR, REVERSE CURRENT (A)
IF, FORWARD CURRENT (mA)
CT, TOTAL CAPACITANCE (pF)
0.001 tP, PULSE ON TIME (ms)
10
5
00.01 0.1 1 1000
Figure 5. Forward Surge Current
10010
15
20
25
IFSM, FORWARD SURGE MAX CURRENT (A)
Based on square wave currents
TJ = 25°C prior to surge
SOD−523
CASE 502−01
ISSUE E
DATE 28 SEP 2010
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
XX = Specific Device Code
M Date Code
E
D
−X−
−Y−
b2X
M
0.08 X Y
A
H
c
DIM MIN NOM MAX
MILLIMETERS
D1.10 1.20 1.30
E0.70 0.80 0.90
A0.50 0.60 0.70
b0.25 0.30 0.35
c0.07 0.14 0.20
L0.30 REF
H1.50 1.60 1.70
12
XX
12
1
2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SCALE 4:1
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
XX
12
M
1
2
E
E
RECOMMENDED
TOP VIEW
SIDE VIEW
2X
BOTTOM VIEW
L2
L
2X
2X
0.48
0.40
2X
1.80
DIMENSION: MILLIMETERS
PACKAGE
OUTLINE
L2 0.15 0.20 0.25
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOD−523
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