BY550-50 ~ BY550-1000
SILI CON RECTIFI ER DI ODES
PRV : 50 - 1000 Volts
Io : 5.0 Amperes
FEATURES :
* High c ur rent capability
* High surge c ur r ent capability
* High reliability
* Low reverse current
* Low for ward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201A D M olded pl astic
* Epoxy : UL94V - O rate flame retar dant
* Lead : Axial lead solderable per MIL-ST D- 202,
Met hod 208 guar anteed
* Pol ar ity : Color band denotes cathode end
* Mount ing position : A ny
* Weight : 0.929 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambie nt temperature unless otherwise specified. Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive loa d, derate curre nt by 20%.
SYMBOL BY550
- 50 BY550
- 100 BY550
- 200 BY550
- 400 BY550
- 600 BY550
- 800 BY550
- 1000 UNIT
Maxim um Repetitive Peak Reverse Voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking Volt age V
DC
50 100 200 400 600 800 1000 V
Maximum Average For ward Current
0.375"(9. 5mm) Lead Lengt h Ta = 60°C
Peak Forwar d Surge Current
8.3ms Singl e half sine wave Superimposed
on rated load ( JEDEC Method)
Maximum Forwar d Vol t age at I
F
= 5.0 Amps. V
F
1.1 V
Maximum DC Reverse Current Ta = 25 °CI
R
20 μA
at rated DC Blocking Vol tage Ta = 100 °CI
R(H)
50 μA
Typical Junct ion Capacitance (Note1) C
J
50 pF
Typical Thermal Resistance (Note2) R
θ
JA 18 °C/W
Juncti on Tem peratur e Range T
J
- 65 t o + 175 °C
Storage Temperature Range T
STG
- 65 t o + 175 °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 04: O ct ober 8, 2012
A300I
FSM
RATING
I
F
5.0 A
0.208 (5.3 0)
0.188 (4.8 0)
DO - 201AD
0.374 (9.50)
0.283 (7.20)
0.050 (1.28)
0.048 (1.22)
Dimensions in inches and
(
millim e te r s
)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( BY550-50 - BY550-1000 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CU RRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
AMBIENT TEMPERATURE, ( °C) NUM BER OF CY CL ES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG 4 . - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
Page 2 of 2 Rev. 04: O ct ober 8, 2012
4
3
2
1
5
10
1.0
240
0
300
0
180
120
60
10
80
1.0
0.01
100
0.1
100 140
020 40 60 120
PERCENT OF RATED REVERSE
VOLTAG E, (%)
PEAK FORWARD SURGE
CURRENT, AMPERE S
AVERAGE FORWARD OUTPUT
CURRENT, AMPERE S
FORWARD CURRENT, AM P E RE S
REVERSE CURRENT,
MICROAMPERES
Ta = 25 °C
Ta = 100 °C
TJ= 25 °C
Ta = 25 °C
Pulse Width = 300 μs
2% Duty Cycle
0
.1
100
10
1
50
5
TJ= 25 °C
JUNCTION CAPACITANCE,
(pF)
REVERSE VOLT AGE, VO LTS
124
10 20 40 100
00.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.01
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com