MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 Siliconix RF623 RF622 F221 = IRF222 = IRF223 F624 = iR | IR ir IRF220 IRF620 IRFO IRF220 = IRF224 IRF222 IRF223 Ss IRF620 = IRF621 IRF622 IRF623 Siliconix Advanced Informati 200V; -Channel Enhancement Mode non These power FETs are designed especially for switching regulators, power converters, solenoid drivers and relay drivers. FEATURES Product Summary = No Second Breakdown Never | BYoss | Rosiom | tp | Package w High Input Impedance IRF 220 200V a Internal Drain-Source Diode IRF221 150V 0.892 5.08 ws Very Rugged: Excellent SOA IAF202 200v TO-3 a Extremely Fast Switching IRF223 450V 1.20 4.04 IRF620 200V BENEFITS 082 | 5.0A IRF621 150V 22048 w Reduced Component Count iareo2 | 200v wma | aoa To = Improved Performance TRFe23 Ts0V s Simpler Designs a Improved Reliability | ool s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage . IRF220,222,620,622 .....ccceceeccseees 200 Gate Current (Peak) .......... cee eee ee eee + 2A IRF221,223,621,623 ..........ccceeeeeee 150V Gate Source Voltage ............ cece eee + 40V Drain-Gate Voltage . Total Power Dissipation ................56. 40w IRF220,222,620,622 ..........cce eee eeee 200V Linear Derating Factor .......... 2+. 0.32W/C IRF221,223,621,623 ...... ccc cece cece eee 150V Storage and Junction Drain Current Continuous! Temperature .............06. -55C to +150C IRF220,221,620,621 ........... eee eee + 5.0A Notes: IRF222,223,622,623 ......-..-2-eeeeee + 4.0A 1. Limited by package dissipation. PUISED?. 06... cece ccc cecen esses eeaaeeeees +20A 2. Pulse test 80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS 5 mac L_MAX |_| Y 0.043 11.092) F pase SEATING 0.638 (0.965) MIN {+ $98 ae PLANE 4.197 ar pati! 408 m \ 0.675 (17.145) 1177 (28.896) La ae (6.35) 0.655 76.637) dA ESN (in 1 ; 8 vaso 111.1765 Y fry | 2 \ ae foe | (+ 2 0420 770.668) Ww wi | 1 TE oN ae om aie 0208 16.207) aor com view he RMAX J- 821420) PIN 1 Gate PIN 1 Gate PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source TO-3 TO-220AB 2-10 Siliconix ELECTRICAL CHARACTERISTICS (Te =25C unless otherwise noted). Symbol | Parameter | Part Number] :Min | . Typ | Max Unit | : Test Conditions | Static IRF 220, 222-6 po BV, Drain-Source Breakdown IRF 620, 622 a Vv 1'Vgg <9, Ip= 250A pss IRF 221, 223 Jf Sope mos IRF 621, 623 Vestn) | Gate Threshold Voitage ANY 2 4 V_ | Ves=Vos; Ip=1mA lass Gate Body Leakage _ All +100 nA | Ves= + 20V, Vos =0 loss Zero Gate Voltage Drain Alt , Ot | 026 | mA Vos= Rated Vos Vas=0 Current = i 02 7 1.0 Vps = Rated Vps, Vas =9, To = 125C IRF 220, 221 / tpsion) | Drain-Source On IRF 620, 621 ot 8s @ |. Vag= 10V, Ip = 2.5A (Note 1) Resistance IRF 222, 223 3 | 42 , : IRF 622, 623 0. IDion) On-State Drain Current , All 5 A | Vps=25V, Vas = 10V (Note 1) : Dynamic Ofs Forward Transconductance All 1,3 2.3 S | Vpg=25V, Ip = 2.5A (Note 1) Ciss Input Capacitance Ail 450 | 600 Reverse Transfer Crss Capacitance All 40 | 80 | oF | Vag=0, Vpg = 25V, f= 1 MHz Common-Source Output Coss Capacitance All 160 300 tafon) Turn-On Delay Time All 40 tr Rise Time | All 80 | og | VoD =75V, Ip=2.5A, R, = 309, Ry =259, taoff) Turn-Off Delay Time | All 100 (Figure 1) te Fall Time " All 60 Drain-Source Diode Characteristics Vsp Forward ON Voltage. . AH -1.57 V_ | Igs=~-5A, Veg =0 (Note 1) 3 . Ip =-5A, Veg = 0, di/dt = 100A/, ter Reverse Recovery Time All 450 ns. (Figure 2) Ss us Note 1: Pulse Test 80ys to 300 us, 1% duty cycle TEST CIRCUITS FIGURE 1 Switching Test Circuit Vin Yoo | ~ 1 | | Agen | O Vout ae | | 20v T! | +t: | | | | siReurr = { PULSE UNDER . [generator] [TEST | PW. = 1 ps Cg <50 pF DUTY CYCLE =1% FIGURE 2 Reverse Recovery Test Circuit v 500 di/dt Adjust (1- 27uH) At 5 To 50uF IN6093 RS PK yAdjust 4 N ho 9 24011 rr + 2 iNa001 40000 F = q . 3 R< 0.250 LS 0.0%uH if rs AA. Tw VVVv WNA723 2N4204 SCOPE FROM TRIGGER CKT ; Siliconix c9ddl = co9Aal = bC9AMl = 079A ccdal = Cocdal = =bCcdal = OCCA