MOC8100 MOC8100X OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 7.0 6.0 'X' SPECIFICATION APPROVALS l l VDE 0884 in 3 available lead form : - STD - G form Dimensions in mm 2.54 1 2 6 5 3 4 1.2 - SMD approved to CECC 00802 BSI approved - Certificate No. 8001 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 DESCRIPTION The MOC8100 optically coupled isolator consists of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Low Input Current 1mA IF l High Current Transfer Ratio (50% min) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-base Voltage BVEBO Power Dissipation 30V 70V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 28/3/03 DB92198m-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Collector-emitter Dark Current (ICEO) 30 70 6 Output Collector Current ( IC ) 0.5 0.3 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Response Time (Rise), tr Response Time (Fall), tf Note 1 Note 2 1.4 V IF = 10mA 10 A VR = 6V 50 V V V nA IC = 1mA ( note 2 ) IC = 100A IE = 100A VCE = 10V mA mA 1mA IF , 5V VCE 1mA IF , 5V VCE ( TA = 0 to + 70C ) V 1mA IF , 100A IC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) s s VCC = 5V , IF= 10mA RL = 75 , fig 1 0.5 5300 7500 5x1010 2 2 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIG 1 28/3/03 DB92198m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 150 100 50 -30 0 25 50 75 100 8 5mA 4 2mA 1mA 0 2 4 6 8 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 60 50 40 30 20 10 0 1.5 0.24 IF = 1mA IC = 100A 0.20 0.16 0.12 0.08 0.04 0 Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 25 50 75 100 125 IF = 1mA VCE = 5V 1.0 0.5 10 0.28 0 25 50 75 Ambient temperature TA ( C ) 0 Relative current transfer ratio -30 Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( C ) 70 Forward current IF (mA) IF = 10mA 12 125 80 Relative current transfer ratio 16 0 0 -30 100 1.4 1.2 1.0 0.8 0.6 0.4 VCE = 5V TA = 25C 0.2 0 0 -30 28/3/03 TA = 25C 20 Collector current IC (mA) Collector power dissipation PC (mW) 200 0 25 50 75 Ambient temperature TA ( C ) 100 0.1 0.2 0.5 1 2 5 Forward current IF (mA) DB92198m-AAS/A2