ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
28/3/03
DB92198m-AAS/A2
0.26
0.5
Dimensions in mm
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
0.26
7.62
6.62
0.5
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
lBSI approved - Certificate No. 8001
DESCRIPTION
The MOC8100 optically coupled isolator
consists of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lLow Input Current 1mA IF
lHigh Current Transfer Ratio (50% min)
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lDC motor controllers
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
3 4
6
2 5
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Collector-base Voltage BVCBO 70V
Emitter-base Voltage BVEBO 6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.46
9.86
0.6
0.1 1.25
0.75
MOC8100
MOC8100X
DB92198m-AAS/A2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.4 VIF = 10mA
Reverse Current (IR)10 µA VR = 6V
Output Collector-emitter Breakdown (BVCEO)30 VIC = 1mA ( note 2 )
Collector-base Breakdown (BVCBO)70 VIC = 100µA
Emitter-base Breakdown (BVEBO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Output Collector Current ( IC ) 0.5 mA 1mA IF , 5V VCE
0.3 mA 1mA IF , 5V VCE
( TA = 0 to + 70°C )
Collector-emitter Saturation VoltageVCE(SAT) 0.5 V1mA IF , 100µA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Response Time (Rise), tr 2µsVCC = 5V , IF= 10mA
Response Time (Fall), tf 2µs RL = 75Ω , fig 1
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
28/3/03
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
FIG 1
DB92198m-AAS/A2
28/3/03
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5 IF = 1mA
VCE = 5V
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
70
80
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 5V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
4
8
12
16
20 TA = 25°C
IF = 10mA
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
-30 0 25 50 75 100
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 1mA
IC = 100µA
Ambient temperature TA ( °C )
0.1 0.2 0.5 1 2 5
1mA
2mA
5mA
