Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Main Product Characteristics General Description High voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2x10A VRRM 100V TJ 150C VF(max) 0.75V The MBR20100C is available in standard TO-220-3, TO-220-3 (2) and TO-220F-3 packages. Mechanical Characteristics * * * Features * * * * * High Surge Capacity 150C Operating Junction Temperature 20A Total (10A Per Diode Leg) Guard-ring for Stress Protection Pb-free Packages are available * * * Applications * * * Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 1.9Grams (TO-220-3, TO-220-3 (2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Maximum for 10 Seconds Power Supply Output Rectification Power Management Instrumentation TO-220F-3 TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR20100C Mar. 2011 Rev. 1. 6 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Pin Configuration T Package (TO-220-3) (Optional) (TO-220-3 (2)) TF Package (TO-220F-3) Figure 2. Pin Configuration of MBR20100C (Top View) Figure 3. Internal Structure of MBR20100C Mar. 2011 Rev. 1. 6 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Ordering Information MBR20100C E1: Lead Free G1: Green Circuit Type Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube Part Number Package Lead Free TO-220-3 (2) MBR20100CT-E1 TO-220F-3 MBR20100CTFE1 Marking ID Green Lead Free Green MBR20100CTG1 MBR20100CTFG1 MBR20100CTE1 MBR20100CTFE1 MBR20100CTG1 MBR20100CTF -G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Mar. 2011 Rev. 1. 6 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC=122C Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=118C Non repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) Operating Junction Temperature Range (Note 2) VRRM VRWM VR 100 V IF(AV) 10 A IFRM 20 A IFSM 150 A TJ 150 C Storage Temperature Range TSTG -65 to 150 C Voltage Rate of Change (Rated VR) ESD (Machine Model=C) ESD (Human Body Model=3B) dv/dt 10000 > 400 > 8000 V/s V V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/JA. Recommended Operating Conditions Parameter Symbol Condition JC Junction to Case JA Junction Ambient Value Maximum Thermal Resistance Mar. 2011 Rev. 1. 6 to Unit TO-220-3/ TO-220-3 (2) 2.5 TO-220F-3 4.5 TO-220-3/ TO-220-3 (2) 60 TO-220F-3 60 C/W C/W BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Electrical Characteristics Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Maximum Instantaneous Reverse Current (Note 3) Symbol VF IR Conditions Value IF=10A, TC=25C 0.85 IF=10A, TC=125C 0.75 IF=20 A, TC=25C 0.95 IF=20 A, TC=125C 0.85 Rated DC TC=125C Voltage, 6.0 Rated DC TC=25C Voltage, Unit V mA 0.1 Note 3: Pulse Test: Pulse Width=300s, Duty Cycle2.0%. Mar. 2011 Rev. 1. 6 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Typical Performance Characteristics 100 10000 Instantaneous Reverse Current (A) Instantaneous Forward Current (A) o 10 o TJ=150 C 1 o TJ=125 C 0.1 TJ=150 C 1000 100 o TJ=125 C 10 1 0.1 o TJ=25 C 0.01 o TJ=25 C 0.01 0.1 1E-3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 Instantaneous Forward Voltage (V) 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode 20 Average Forward Current AMPS 18 16 14 12 10 8 6 4 2 0 115 120 125 130 135 140 145 150 155 160 0 Case Temperature ( C) Figure 6. Average Forward Current vs. Case Temperature (Square, Per Diode) Mar. 2011 . Rev. 1. 6 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 9.660(0.380) 10.660(0.420) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 0.200(0.008) 14.230(0.560) 16.510(0.650) 1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 3.560(0.140) 4.060(0.160) 2.580(0.102) 3.380(0.133) 7 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3 7 0.381(0.015) 60 0.813(0.032) 8.763(0.345) 60 0.381(0.015) 2.540(0.100) Mar. 2011 2.540(0.100) Rev. 1. 6 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) 1.620(0.064) 1.820(0.072) 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 3 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3 3.000(0.118) REF 3 1.170(0.046) 1.390(0.055) 0.700(0.028) 0.900(0.035) 2.540(0.100) REF Mar. 2011 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Rev. 1. 6 BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20100C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) Unit: mm(inch) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) Mar. 2011 2.540(0.100) Rev. 1. 6 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 9 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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