1
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
-30
-20
-10
0
10
20
30
4567891011121314
Frequency (GHz)
Spar & NF (dB)
0
1
2
3
4
5
6
Noise Fi
g
ure
(
dB
)
-30
-20
-10
0
10
20
30
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
Spar & NF (dB)
0
1
2
3
4
5
6
Noise Figure (dB)
Product Description
The TriQuint TGA2512-SM is a packaged X-
band balanced LNA with AGC amplifier for EW,
ECM, and RADAR receiver or driver amplifier
applications. The TGA2512-SM provides
excellent noise performance with typical
midband NF of 2.3dB, and high gain, 25dB from
4-14.2GHz
The TGA2512-SM is designed for maximum
ease of use. TGA2512-SM can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part can be used in self-
biased mode, with a single +5V supply
connection, or in gate biased mode, allowing
the user to control the current for a particular
application.
In self-biased mode the TGA2512-SM achieves
6dBm typical P1dB, while in gate-biased mode
the typical P1dB is over 13dBm.
Lead-Free & RoHS compliant.
Evaluation boards are available.
Primary Applications
•X-Band Radar
•EW, ECM
•Point-to-Point Radio
Measured Data
ORL
Gain
IRL
Key Features
•Frequency Range: 4 – 14.2 GHz
•2.3 dB Nominal Noise Figure
•25 dB Nominal Gain
•15 dB AGC Range
•13 dBm Nominal P1dB
•24dBm Nominal OIP3
•Bias: 5 V, 160 mA Gate Bias
5 V, 90 mA Self Bias
•Package Dimensions:
4.0 x 4.0 x 0.9 mm
Bias Conditions: Gate Bias, Vd = 5V, Id = 160mA
Bias Conditions: Self Bias, Vd = 5V, Id = 90mA
NF
Gain
NF
ORL
IRL
Self Bias Gate Bias
Datasheet subject to change without noitce
4 - 14 GHz Balanced LNA
2
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd
Drain Voltage Gate Bias: [4 + (0.009)(Id)] V 2/ 3/
Self Bias: [3.5 + (0.022)(Id)] V
Vg
Gate Voltage Range -1 TO +0.5 V
Id
Drain Current (gate biased) 240 mA 2/
⏐Ig⏐ Gate Current 7.04 mA
P
IN
Input Continuous Wave Power 21 dBm
P
D
Power Dissipation 1.56 W 2/ 4/
T
CH
Operating Channel Temperature 200 °C 5/
Mounting Temperature (30 Seconds) 260 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/ Unit for Id is mA
4/ When operated at this bias condition with a base plate temperature of 85 °C, the median
life is 9.3E4 hours.
5/ Junction operating temperature will directly affect the device median time to failure (Tm).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
3
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE II-A
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal)
PARAMETER Self Bias
TGA2512-1-SM
Gate Bias
TGA2512-2-SM UNITS
Frequency Range 4 – 14.2 4 – 14.2 GHz
Drain Voltage, Vd 5.0 5.0 V
Drain Current, Id 160 160 mA
Gate Voltage, Vg - -0.1 V
Small Signal Gain, S21 22 25 dB
Input Return Loss, S11 -10 -10 dB
Output Return Loss, S22 -20 -20 dB
Noise Figure, NF 2.3 2.3 dB
Output Power @ 1dB Gain Compression,
P1dB 6 13 dBm
OIP3 16 24 dBm
Temperature Gain Coefficent -0.02 -0.02 dB/°C
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
PARAMETER Min Typ Max UNITS
Frequency Range 11 14.2 GHz
Drain Current, Id 160 200 mA
Gate Voltage, Vg -0.4 -0.1 0.2 V
Small Signal Gain, S21 19 24 dB
Input Return Loss, S11 -7 -12 dB
Output Return Loss, S22 -7 -12 dB
Noise Figure, NF 3 4.5 dB
Output Power @ 1dB Gain Compression,
P1dB 10 13 dBm
OIP3 16 22 dBm
TABLE II-B
TGA2512-2-SM ELECTRICAL CHARACTERISTICS
(Vd=5V, Id=160mA, Vctrl=0V, Ta = 25 0C, Nominal)
4
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS
T
CH
(°C)
θ
JC
(°C/W)
T
m
(HRS)
θ
JC
Thermal Resistance
(channel to Case)
Vd = 5 V
Id = 160 mA Gate Bias
Pdiss = 0.80 W
115
37.6
1.3E+6
θ
JC
Thermal Resistance
(channel to Case)
Vd = 5 V
Id = 90 mA Self Bias
Pdiss = 0.45 W
97.7
28.2
7.2E+6
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Temperature at 85 °C
Median Lifetime (Tm) vs. Channel Temperature
5
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain Over Vctrl (dB)
Vctrl=0.0V
Vctrl=2.5V
Vctrl=2.75V
Vctrl=3.0V
Vctrl=3.25V
Vctrl=3.5V
Vctrl=3.75V
Vctrl=4.0V
Vctrl=4.25V
Vctrl=4.5V
Vctrl=5.0V
6
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Input Return Loss (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Output Return Loss (dB)
7
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
0
1
2
3
4
5
6
7
8
9
10
23456789101112131415161718
Frequency (GHz)
Noise Figure (dB)
0
1
2
3
4
5
6
7
8
9
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Noise Figure Over Vctrl (dB)
Vctrl=0V
Vctrl=2.5V
Vctrl=2.75V
Vctrl=3.0V
Vctrl=3.5V
Vctrl=4.0V
Vctrl=5.0V
8
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
-15
-12
-9
-6
-3
0
3
6
9
12
15
23456789101112131415161718
Frequency (GHz)
P1dB Over Vctrl (dBm)
Vctrl=0V
Vctrl=2V
Vctrl=3V
Vctrl=3.5V
Vctrl=4V
Vctrl=5V
9
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
8
10
12
14
16
18
20
22
24
26
56789101112131415
Frequency (GHz)
OIP3 (dBm)
10
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
23456789101112131415161718
Frequency (GHz)
Gain Over Vctrl (dB)
Vctrl=0V
Vctrl=1V
Vctrl=2V
Vctrl=3V
Vctrl=4V
Vctrl=5V
11
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Input Return Loss (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Output Return Loss (dB)
12
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA
0
1
2
3
4
5
6
7
8
9
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Noise Figure (dB)
0
1
2
3
4
5
6
7
8
9
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Noise Figure Over Vctrl (dB)
Vctrl=0V
Vctrl=2.5V
Vctrl=2.75V
Vctrl=3.0V
Vctrl=3.5V
Vctrl=4.0V
Vctrl=5.0V
13
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA
-15
-12
-9
-6
-3
0
3
6
9
12
15
23456789101112131415161718
Frequency (GHz)
P1dB Over Vctrl (dBm)
Vctrl=0V
Vctrl=2V
Vctrl=3V
Vctrl=3.5V
Vctrl=4V
Vctrl=5V
14
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 mA
8
10
12
14
16
18
20
22
24
26
5 6 7 8 9 101112131415
Frequency (GHz)
OIP3 (dBm)
15
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Package Pinout Diagram
Bottom ViewTop View
Dot indicates Pin 1
Pin Description
1,3, 4, 5, 6, 7, 9 NC
2 RF Input
8 RF Output
10 Vd
11 Vctrl
12 Vg
13 Gnd
11 12
13
10
9
8
7
654
3
2
1
Self Bias
Gate Bias
Pin Description
1,3, 4, 5, 6, 7, 9, 12 NC
2 RF Input
8 RF Output
10 Vd
11 Vctrl
13 Gnd
Self Bias: Vd = 5V (Id = ~90mA), Vctrl = 0 to +5V for Gain adjustment
Gate Bias: Vd = 5V , Vctrl = 0 to +5V for Gain adjustment
Vg = Range, -0.5 to 0, typically ~ -0.1 will provide ~160mA of Id.
16
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Mechanical Drawing
Units: Millimeters
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
17
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Recommended Board Layout Assembly
Self Bias
100pF
0402 Case Size
18
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Recommended Board Layout Assembly
Gate Bias
100pF
0402 Case Size
19
TGA2512-SM
April 2012 © Rev D
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Ordering Information
Part Package Style
TGA2512-1-SM QFN 4x4 Surface Mount – Self Bias
TGA2512-2-SM QFN 4x4 Surface Mount – Gate Bias
