/TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 EasyPACK/IGBT3and3diodeand PressFIT/NTC EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC /PreliminaryData J VCES = 600V IC nom = 30A / ICRM = 60A * * * * UPS TypicalApplications * AirConditioning * MotorDrives * ServoDrives * UPSSystems * * VCEsat * IGBT3 * VCEsat ElectricalFeatures * LowSwitchingLosses * LowVCEsat * TrenchIGBT3 * VCEsatwithpositiveTemperatureCoefficient * Al2O3 DCB * * PressFIT * MechanicalFeatures * Al2O3SubstratewithLowThermalResistance * Compactdesign * PressFITContactTechnology * Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 /TechnicalInformation IGBT- IGBT-modules IGBT- FS30R06W1E3_B11 PreliminaryData /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 600 V DC ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 30 45 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 60 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 150 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues Collector-emittersaturationvoltage min. IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C Gatethresholdvoltage IC = 0,30 mA, VCE = VGE, Tvj = 25C Gatecharge VCE sat A A typ. max. 1,55 1,70 1,80 2,00 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 0,30 C Internalgateresistor Tvj = 25C RGint 0,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,65 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,051 nF Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA td on 0,023 0,023 0,023 s s s tr 0,023 0,028 0,029 s s s td off 0,15 0,16 0,18 s s s tf 0,12 0,165 0,175 s s s Turn-ondelaytime,inductiveload IC = 30 A, VCE = 300 V VGE = 15 V RGon = 15 Tvj = 25C Tvj = 125C Tvj = 150C Risetime,inductiveload IC = 30 A, VCE = 300 V VGE = 15 V RGon = 15 Tvj = 25C Tvj = 125C Tvj = 150C Turn-offdelaytime,inductiveload IC = 30 A, VCE = 300 V VGE = 15 V RGoff = 15 Tvj = 25C Tvj = 125C Tvj = 150C Falltime,inductiveload IC = 30 A, VCE = 300 V VGE = 15 V RGoff = 15 Tvj = 25C Tvj = 125C Tvj = 150C Turn-onenergylossperpulse IC = 30 A, VCE = 300 V, LS = 50 nH Tvj = 25C VGE = 15 V, di/dt = 1000 A/s (Tvj = 150C) Tvj = 125C RGon = 15 Tvj = 150C Eon 0,60 0,75 0,80 mJ mJ mJ Turn-offenergylossperpulse IC = 30 A, VCE = 300 V, LS = 50 nH Tvj = 25C VGE = 15 V, du/dt = 4200 V/s (Tvj = 150C) Tvj = 125C RGoff = 15 Tvj = 150C Eoff 0,62 0,83 0,87 mJ mJ mJ SCdata VGE 15 V, VCC = 360 V VCEmax = VCES -LsCE *di/dt ISC 210 150 A A Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,90 1,00 K/W Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,85 K/W Temperatureunderswitchingconditions Tvj op -40 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 2 tP 8 s, Tvj = 25C tP 6 s, Tvj = 150C 150 C /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 600 V IF 30 A IFRM 60 A It 90,0 82,0 /CharacteristicValues min. typ. max. 1,60 1,55 1,50 2,00 As As Forwardvoltage IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C VF Peakreverserecoverycurrent IF = 30 A, - diF/dt = 1000 A/s (Tvj=150C) VR = 300 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C IRM 20,0 24,0 26,0 A A A Recoveredcharge IF = 30 A, - diF/dt = 1000 A/s (Tvj=150C) VR = 300 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Qr 1,20 2,00 2,30 C C C Reverserecoveryenergy IF = 30 A, - diF/dt = 1000 A/s (Tvj=150C) VR = 300 V VGE = -15 V Tvj = 25C Tvj = 125C Tvj = 150C Erec 0,17 0,35 0,41 mJ mJ mJ V V V Thermalresistance,junctiontocase /Diode/perdiode RthJC 1,15 1,25 K/W Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,90 K/W Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW C NTC-/NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K Specificationaccordingtothevalidapplicationnote. preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 3 /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 11,5 6,3 mm Clearance -/terminaltoheatsink -/terminaltoterminal 10,0 5,0 mm Comperativetrackingindex CTI > 200 VISOL kV 2,5 min. typ. max. LsCE 25 nH RCC'+EE' 4,50 m Tstg -40 125 C Anpresskraft fur mech. Bef. pro Feder mountig force per clamp F 20 - 50 N Weight G 24 g Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 25 A rms per connector pin preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 4 /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 60 60 Tvj = 25C Tvj = 125C Tvj = 150C 48 48 42 42 36 36 30 30 24 24 18 18 12 12 6 6 0 0,0 0,3 0,6 0,9 VGE = 19 V VGE = 17 V VGE = 15 V VGE = 13 V VGE = 11 V VGE = 9 V 54 IC [A] IC [A] 54 1,2 1,5 1,8 VCE [V] 2,1 2,4 2,7 0 3,0 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=15,RGoff=15,VCE=300V 60 2,4 Tvj = 25C Tvj = 125C Tvj = 150C 54 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 2,0 48 42 1,6 E [mJ] IC [A] 36 30 1,2 24 0,8 18 12 0,4 6 0 5 6 7 8 9 VGE [V] 10 11 0,0 12 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 5 0 10 20 30 IC [A] 40 50 60 /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=30A,VCE=300V IGBT- transientthermalimpedanceIGBT,Inverter ZthJH=f(t) 4,0 10 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 3,6 3,2 ZthJH : IGBT 2,8 ZthJH [K/W] E [mJ] 2,4 2,0 1,6 1 1,2 0,8 i: 1 2 3 4 ri[K/W]: 0,142 0,309 0,719 0,58 i[s]: 0,0005 0,005 0,05 0,2 0,4 0,0 0 20 40 60 80 100 RG [] 120 140 0,1 0,001 160 IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=15,Tvj=150C 1 10 60 IC, Modul IC, Chip 60 54 54 Tvj = 25C Tvj = 125C Tvj = 150C 48 48 42 42 36 36 IF [A] IC [A] 0,1 t [s] Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 66 30 30 24 24 18 18 12 12 6 6 0 0,01 0 200 400 VCE [V] 600 0 800 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VF [V] /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=15,VCE=300V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=30A,VCE=300V 0,8 0,6 Erec, Tvj = 125C Erec, Tvj = 150C 0,7 Erec, Tvj = 125C Erec, Tvj = 150C 0,5 0,6 0,4 E [mJ] E [mJ] 0,5 0,4 0,3 0,3 0,2 0,2 0,1 0,1 0,0 0 10 20 30 IF [A] 40 50 0,0 60 Diode transientthermalimpedanceDiode,Inverter ZthJIH=f(t) 0 20 40 60 80 100 RG [] 120 140 160 140 160 NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 10 100000 ZthJH: Diode Rtyp R[] ZthJH [K/W] 10000 1 1000 i: 1 2 3 4 ri[K/W]: 0,258 0,441 0,796 0,554 i[s]: 0,0005 0,005 0,05 0,2 0,1 0,001 0,01 0,1 t [s] 1 100 10 preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 7 0 20 40 60 80 100 TC [C] 120 /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData /circuit_diagram_headline J /packageoutlines Infineon preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 8 /TechnicalInformation IGBT- IGBT-modules FS30R06W1E3_B11 PreliminaryData (www.infineon.com) Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:DK dateofpublication:2013-11-05 approvedby:MB revision:2.0 9