MMBD7000L, SMMBD7000L Dual Switching Diode Features * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 100 V Reverse Voltage Forward Current IF 200 mA Forward Surge Current (60 Hz @ 1 cycle) IFSM 1.6 A Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 0.5 SOT-23 (TO-236) CASE 318 STYLE 11 1 ANODE 3 CATHODE/ANODE A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1)TA = 25C Derate above 25C PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature C/W RqJA TJ, Tstg M5C MG G 1 M5C M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping MMBD7000LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBD7000LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBD7000LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBD7000LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device 417 C -55 to +150 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 2 CATHODE For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 June, 2017 - Rev. 8 1 Publication Order Number: MMBD7000LT1/D MMBD7000L, SMMBD7000L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE) Symbol Characteristic Min Max 100 - - - - 1.0 3.0 100 0.55 0.67 0.75 0.7 0.82 1.1 - 4.0 - 1.5 Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mAdc) V(BR) Vdc mAdc Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125C) IR IR2 IR3 Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr Capacitance (VR = 0 V) C Vdc ns pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 MMBD7000L, SMMBD7000L CURVES APPLICABLE TO EACH DIODE 100 10 TA = 85C I R , REVERSE CURRENT (m A) I F, FORWARD CURRENT (mA) TA = 150C TA = -40C 10 TA = 25C 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 0 10 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage IFSW, FORWARD SURGE MAX CURRENT (A) C D , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 2.0 4.0 30 40 50 Figure 3. Leakage Current 0.68 0 20 VR, REVERSE VOLTAGE (VOLTS) 6.0 25 20 15 10 5 0 0.001 8.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 0.01 0.1 1 10 tp, PULSE ON TIME (ms) 100 Figure 5. Forward Surge Current www.onsemi.com 3 1000 MMBD7000L, SMMBD7000L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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