Philips Semiconductors Preliminary specification
Three quadrant triacs BTA225B series C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsinaplasticenvelopesuitablefor
surface mounting, intended for use in BTA225B- 500C 600C 800C
circuitswherehighstaticanddynamic VDRM Repetitive peak off-state 500 600 800 V
dV/dt and high dI/dt can occur. These voltages
devices will commutate the full rated IT(RMS) RMS on-state current 25 25 25 A
rms current at the maximum rated ITSM Non-repetitive peak on-state 180 180 180 A
junction temperature, without the aid current
of a snubber.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 50016001800 V
voltages
IT(RMS) RMS on-state current full sine wave; - 25 A
Tmb ≤ 91 ˚C
ITSM Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to surge
t = 20 ms - 190 A
t = 16.7 ms - 209 A
I2tI
2
t for fusing t = 10 ms - 180 A2s
dIT/dt Repetitive rate of rise of ITM = 30 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
13
mb
2
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.000