2.70
3.70
0.55
1.05
1.6
JIANG
SU
CHANGJIANG ELECTRONICS
TECHNOLOGY
CO.
, LTD
SOD
-
123 Plastic
-
Encapsulate Diode
B581
9
W
SCHOTTKY BARRIER DIODE
FEATURES
:
Power dissipation
P
D
:
450
m
W
(
T
amb=25
℃)
Collector current
I
F
:
1
A
C
ollector
-
base voltage
V
R
:
40
V
Oper
ating and storage junction temperature range
T
J
,
T
stg
:
-
55
℃
to +150
℃
MARKING
:
SL
ELECTRICAL CHARACTERISTICS
(
T
amb
=25
℃
unless otherwise specified
)
P
arameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
=
1
mA
40
V
Reverse voltage leakage current
I
R
V
R
=4
0V
V
R
=4
V
V
R
=6
V
1
0.05
0.075
mA
Forward
voltage
V
F
I
F
=0.
1A
I
F
=
1A
I
F
=
3A
0.45
0.6
0.9
V
Diode capacitance
C
D
V
R
=
4V f=1MHz
120
pF
Unit
:
mm
SOD-123
c
b
D
0.20
E
A1
A2
A
E1
L
L1
SOD-123 P
ACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
L
L1
θ
Min
1.050
0.000
1.050
0.450
0.080
1.500
2.600
3.550
0.250
0°
Max
1.250
0.100
1.150
0.650
0.150
1.700
2.800
3.850
0.450
8°
Min
0.041
0.000
0.041
0.018
0.003
0.059
0.102
0.140
0.010
0°
Max
0.049
0.004
0.045
0.026
0.006
0.067
0.110
0.152
0.018
8°
Dimensions In Millimeters
Dimensions In Inches
0.020REF
0.500REF
θ
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