MMBZ5221B~MMBZ5267B
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
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Zener diode
Features
1. High reliability
2. Wide volta ge range available
3. Low reverse current level
4. Small outline package for space savings
5. Surface mount package
Applications
Voltage st abili zation
Absolute Maximum Ratings
Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V 410 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 150 ℃
Storage temperature range Tstg -55~+150 ℃
Maximum Thermal Resistance
Tj=25℃ Parameter Test Conditions Symbol Value Unit
Junction ambient I=9.5mm(3/8”) T L=constant RthJA 300 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=10mA VF 0.9 V
MMBZ5221B~MMBZ5267B
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VZnom1) IZT for r
zjT rzjK at I
ZK IR at VR TKVZ
Type Marking V mA Ω Ω mA μA V %/K
MMBZ5221B 18A 2.4 20 <30 <1200 0.25 <100 1.0 <-0.085
MMBZ5222B 18B 2.5 20 <30 <1250 0.25 <100 1.0 <-0.085
MMBZ5223B 18C 2.7 20 <30 <1300 0.25 <75 1.0 <-0.080
MMBZ5224B 18D 2.8 20 <30 <1400 0.25 <75 1.0 <-0.080
MMBZ5225B 18E 3.0 20 <29 <1600 0.25 <50 1.0 <-0.075
MMBZ5226B 8A 3.3 20 <28 <1600 0.25 <25 1.0 <-0.070
MMBZ5227B 8B 3.6 20 <24 <1700 0.25 <15 1.0 <-0.065
MMBZ5228B 8C 3.9 20 <23 <1900 0.25 <10 1.0 <-0.060
MMBZ5229B 8D 4.3 20 <22 <2000 0.25 <5 1.0 <+0.055
MMBZ5230B 8E 4.7 20 <19 <1900 0.25 <5 2.0 <+0.030
MMBZ5231B 8F 5.1 20 <17 <1600 0.25 <5 2.0 <+0.030
MMBZ5232B 8G 5.6 20 <11 <1600 0.25 <5 3.0 <+0.038
MMBZ5233B 8H 6.0 20 <7 <1600 0.25 <5 3.5 <+0.038
MMBZ5234B 8J 6.2 20 <7 <1000 0.25 <5 4.0 <+0.045
MMBZ5235B 8K 6.8 20 <5 <750 0.25 <3 5.0 <+0.050
MMBZ5236B 8L 7.5 20 <6 <500 0.25 <3 6.0 <+0.058
MMBZ5237B 8M 8.2 20 <8 <500 0.25 <3 6.5 <+0.062
MMBZ5238B 8N 8.7 20 <8 <600 0.25 <3 6.5 <+0.065
MMBZ5239B 8P 9.1 20 <10 <600 0.25 <3 7.0 <+0.068
MMBZ5240B 8Q 10 20 <17 <600 0.25 <3 8.0 <+0.075
MMBZ5241B 8R 11 20 <22 <600 0.25 <2 8.4 <+0.076
MMBZ5242B 8S 12 20 <30 <600 0.25 <1 9.1 <+0.077
MMBZ5243B 8T 13 9.5 <13 <600 0.25 <0.5 9.9 <+0.079
MMBZ5244B 8U 14 9.0 <15 <600 0.25 <0.1 10 <+0.082
MMBZ5245B 8V 15 8.5 <16 <600 0.25 <0.1 11 <+0.082
MMBZ5246B 8W 16 7.8 <17 <600 0.25 <0.1 12 <+0.083
MMBZ5247B 8X 17 7.4 <19 <600 0.25 <0.1 13 <+0.084
MMBZ5248B 8Y 18 7.0 <21 <600 0.25 <0.1 14 <+0.085
MMBZ5249B 8Z 19 6.6 <23 <600 0.25 <0.1 15 <+0.086
MMBZ5250B 81A 20 6.2 <25 <600 0.25 <0.1 16 <+0.086
MMBZ5251B 81B 22 5.6 <29 <600 0.25 <0.1 17 <+0.087
MMBZ5252B 81C 24 5.2 <33 <600 0.25 <0.1 18 <+0.088
MMBZ5253B 81D 25 5.0 <35 <600 0.25 <0.1 19 <+0.089
MMBZ5254B 81E 27 4.6 <41 <600 0.25 <0.1 21 <+0.090
MMBZ5255B 81F 28 4.5 <44 <600 0.25 <0.1 21 <+0.091
MMBZ5256B 81G 30 4.2 <49 <600 0.25 <0.1 23 <+0.091
MMBZ5257B 81H 33 3.8 <58 <700 0.25 <0.1 25 <+0.092
MMBZ5258B 81J 36 3.4 <70 <700 0.25 <0.1 27 <+0.093
MMBZ5259B 81K 39 3.2 <80 <800 0.25 <0.1 30 <+0.094
MMBZ5260B 18F 43 3.0 <93 <900 0.25 <0.1 33 <+0.095
MMBZ5261B 81M 47 2.7 <105 <1000 0.25 <0.1 36 <+0.095
MMBZ5262B 81N 51 2.5 <125 <1100 0.25 <0.1 39 <+0.096
MMBZ5263B 81P 56 2.2 <150 <1300 0.25 <0.1 43 <+0.096
MMBZ5264B 81Q 60 2.1 <170 <1400 0.25 <0.1 46 <+0.097
MMBZ5265B 81R 62 2.0 <185 <1400 0.25 <0.1 47 <+0.097
MMBZ5266B 81S 68 1.8 <230 <1600 0.25 <0.1 52 <+0.097
MMBZ5267B 81T 75 1.7 <270 <1700 0.25 <0.1 58 <+0.098
1) Based on DC-measurem ent at thermal equilibrium while maintaining the lead temperature(TL)at 30℃,
9.5mm(3/8”) from the diode body.
MMBZ5221B~MMBZ5267B
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
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Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Zener voltage versus zener current
Figure 2. Typical forward voltage
Figure 3. Typical leakage current
Figure 4. Effect of zener voltage on zener impendance Figure 5. Typical capacitance
MMBZ5221B~MMBZ5267B
Excel Semiconductor
www.excel-semi.com Rev. 3e, 1-Nov-2006
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Dimensions
Style 8:
PIN
1. Anode
2. No connection
3. Cathode
SOT-23 Footprint
Notes:
1. Dimensioning and tolera nce per
ANSI Y14.5M, 1982.
2. Controlling dimension: inch.
3. Maximum lead thickness includes lead finish
thickness. Minimum lead thickness is the
minimum thickness of base material.
