IRL2505LPbF
IRL2505SPbF
HEXFET® Power MOSFET
PD - 95577
lAdvanced Process Technology
lSurface Mount (IRL2505S)
lLow-profile through-hole (IRL2505L)
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lLead-Free
Parameter Typ. Max. Units
RθJC Junction-to-Case 0.75
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** 40
Thermal Resistance
°C/W
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V74 A
IDM Pulsed Drain Current 360
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current54 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL2505L) is available for low-
profile applications.
Description
VDSS = 55V
RDS(on) = 0.008Ω
ID = 104A
2
D Pak
TO-262
S
D
G
07/19/04
lLogic-Level Gate Drive
www.irf.com 1
IRL2505S/LPbF
2www.irf.com
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient 0.035 V/°C Reference to 25°C, ID = 1mA
0.008 VGS = 10V, ID = 54A
0.010 ΩVGS = 5.0V, ID = 54A
0.013 VGS = 4.0V, ID = 45A
VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 59 S VDS = 25V, ID = 54A
25 VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage -100 VGS = -16V
QgTotal Gate Charge 130 ID = 54A
Qgs Gate-to-Source Charge 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 67 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 12 VDD = 28V
trRise Time 160 ID = 54A
td(off) Turn-Off Delay Time 43 RG = 1.3Ω, VGS = 5.0V
tfFall Time 84 RD = 0.50Ω, See Fig. 10
Between lead,
and center of die contact
Ciss Input Capacitance 5000 VGS = 0V
Coss Output Capacitance 1100 pF VDS = 25V
Crss Reverse Transfer Capacitance 390 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
RDS(on) Static Drain-to-Source On-Resistance
LSInternal Source Inductance 7.5
ns
IDSS Drain-to-Source Leakage Current µA
Parameter Min. Typ. Max. Units Conditions
I
SContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 54A, VGS = 0V
trr Reverse Recovery Time 140 210 ns TJ = 25°C, IF = 54A
Qrr Reverse Recovery Charge 650 970 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
104
360
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Uses IRL2505 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25Ω, IAS = 54A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IGSS
IRL2505S/LPbF
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 90A
D
1
10
100
1000
0.1 1 10 10
0
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltag e (V)
DS
A
20µs PULS E WIDT H
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 10
0
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltag e (V)
DS
A
20µs PULS E WIDT H
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.5 3.5 4.5 5.5 6.5 7.5
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PUL SE WID TH
DS
IRL2505S/LPbF
4www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
2000
4000
6000
8000
10000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
3
6
9
12
15
0 40 80 120 160 20
0
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR T EST CIRCU IT
SEE FIGURE 13
I = 54A V = 44V
V = 28V
D
DS
DS
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4 2.
8
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175° C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175° C
Singl e Pul s e
C
J
IRL2505S/LPbF
www.irf.com 5
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RG
D.U.T.
5.0V
+
-
VDD
25 50 75 100 125 150 175
0
20
40
60
80
100
120
T , C ase Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. D u ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , R ect angular Pulse Dur at ion (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRL2505S/LPbF
6www.irf.com
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
DS
L
D.U.T.
V
D
D
I
AS
t
p
0.01Ω
R
G
+
-
tp
V
DS
I
AS
VDD
V
(BR)DSS
10 V
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
QG
QGS QGD
V
G
Charge
10 V
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
200
400
600
800
1000
1200
25 50 75 100 125 150 17
5
J
E , Single Puls e Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperatu re (°C)
V = 25V
I
TOP 22A
38A
BOTTOM 54A
DD
D
IRL2505S/LPbF
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* V
GS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRL2505S/LPbF
8www.irf.com
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembly line
position indicates "Lead-Free"
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = ASSEMBLY S ITE CODE
WEEK 02
P = DE S IGNAT E S LEAD-FREE
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
ASSEMBLY YEAR 0 = 20 00
DATE CODE
PART NUMBER
IRL2505S/LPbF
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TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEM BLED O N WW 19, 1997
Note: "P" in assembly line
position indicates "Lead-F ree"
IN TH E ASS EMB LY LINE "C" LOGO
TH I S I S AN IRL 3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YE AR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
AS S EMBLY
INTERNATIONAL
RECTIFIER
PROD UCT (OPTIO NAL)
P = DES IGNATE S LE AD-FREE
A = ASSEMB LY SITE CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR
IRL2505S/LPbF
10 www.irf.com
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16. 10 ( .634 )
15. 90 ( .626 )
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24. 30 ( .957
)
23. 90 ( .941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26. 40 (1. 039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCL UD ES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
