MJE13003 w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Peak Base Current IBM Continuous Emitter Current IE Peak Emitter Current IEM Power Dissipation PD Power Dissipation (TA=25C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA Thermal Resistance JC ELECTRICAL SYMBOL ICEV ICEV IEBO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE fT Cob 400 700 9.0 1.5 3.0 0.75 1.5 2.25 4.5 40 1.4 -65 to +150 89.0 3.12 CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN TYP VCE=700V, VBE(OFF)=1.5V VCE=700V, VBE(OFF)=1.5V, TC=100C VEB=9.0V IC=10mA 400 IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A VCE=2.0V, IC=0.5A 8.0 VCE=2.0V, IC=1.0A 5.0 VCE=10V, IC=100mA, f=1.0MHz 4.0 VCB=10V, IE=0, f=100kHz 40 MAX 1.0 5.0 1.0 0.5 1.0 3.0 1.0 1.2 40 25 UNITS V V V A A A A A A W W C C/W C/W UNITS mA mA mA V V V V V V MHz pF R1 (23-October 2013) MJE13003 SILICON NPN POWER TRANSISTOR ELECTRICAL SYMBOL td tr ts tf CHARACTERISTICS - Continued: (TC=25C unless otherwise noted) TEST CONDITIONS TYP MAX Resistive Load 0.1 VCC=125V, IC=1.0A, IB1=IB2=0.2A 1.0 tp=25s, Duty Cycle < 1.0% 4.0 0.7 tsv tc tfi Inductive Load IC=1.0A, Vclamp=300V, IB1=0.2A VBE(off)=5.0V, TC=100C UNITS s s s s s s s 4.0 0.75 0.15 TO-126 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter MARKING: FULL PART NUMBER R1 (23-October 2013) w w w. c e n t r a l s e m i . c o m