MJE13003
SILICON
NPN POWER TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE13003 is a
silicon NPN power transistor designed for high speed
power switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Emitter Voltage VCEO 400 V
Collector-Emitter Voltage VCEV 700 V
Emitter-Base Voltage VEBO 9.0 V
Continuous Collector Current IC 1.5 A
Peak Collector Current ICM 3.0 A
Continuous Base Current IB 0.75 A
Peak Base Current IBM 1.5 A
Continuous Emitter Current IE 2.25 A
Peak Emitter Current IEM 4.5 A
Power Dissipation PD 40 W
Power Dissipation (TA=25°C) PD 1.4 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 89.0 °C/W
Thermal Resistance ΘJC 3.12 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEV V
CE=700V, VBE(OFF)=1.5V 1.0 mA
ICEV V
CE=700V, VBE(OFF)=1.5V, TC=100°C 5.0 mA
IEBO V
EB=9.0V 1.0 mA
BVCEO I
C=10mA 400 V
VCE(SAT) I
C=0.5A, IB=0.1A 0.5 V
VCE(SAT) I
C=1.0A, IB=0.25A 1.0 V
VCE(SAT) I
C=1.5A, IB=0.5A 3.0 V
VBE(SAT) I
C=0.5A, IB=0.1A 1.0 V
VBE(SAT) I
C=1.0A, IB=0.25A 1.2 V
hFE V
CE=2.0V, IC=0.5A 8.0 40
hFE V
CE=2.0V, IC=1.0A 5.0 25
fT V
CE=10V, IC=100mA, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=100kHz 40 pF
TO-126 CASE
R1 (23-October 2013)
www.centralsemi.com
MJE13003
SILICON
NPN POWER TRANSISTOR
LEAD CODE:
1) Base
2) Collector
3) Emitter
MARKING:
FULL PART NUMBER
TO-126 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
td Resistive Load 0.1 μs
tr V
CC=125V, IC=1.0A, IB1=IB2=0.2A 1.0 μs
ts tp=25μs, Duty Cycle < 1.0% 4.0 μs
tf 0.7 μs
tsv Inductive Load 4.0 μs
tc I
C=1.0A, Vclamp=300V, IB1=0.2A 0.75 μs
tfi V
BE(off)=5.0V, TC=100°C 0.15 μs
www.centralsemi.com
R1 (23-October 2013)
