TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 2$B753 INDUSTRIAL APPLICATIONS Unit in mm LOSMAZ. SS64+02 e High Collector Current : IG@=7A ae Tare ae Low Collector Saturation Voltage =| 4 : VCR(sat)= 0-5V (Max.) at I=4A ar 3 a e High Collector Power Dissipation. , 7 4 Complementary to 2SD843. =! i {II | e sy | S MAXIMUM RATINGS (Ta = 25C) wBwax. LL 3 | ave [tH I CHARACTERISTIC SYMBOL | RATING UNIT. : bs Collector-Base Voltage VCBO 100 V asa lest 2 Collector-Emitter Voltage VCEO 80 Vv 3) EAN ~ Emitter-Base Voltage VEBO 5 V SE 3 Collector Current Ic oF A 1. BASE . 9 2 COLLECTOR (HEAT SINK) Collector Power Ta=25C | Pc 15 WwW 3. EMITTER Dissipation Te=25C Pc 40 WwW Junction Temperature Tj 150 C JEDEC TO-220AB Storage Temperature Range Tstg 55~150 C EIA SC-46 TOSHIBA 2-10A1A Mounting kit No.AC75 ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 1.9 CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBO VcB= 100V1e=0 5 | pwA Emitter Cut-off Current TERO VEB= 5VIe=0 5 | uA Collector-Emitter _ v Breakdown Voltage VBR)CEO |IC= 750mAnTB=0 80) Vv hFE(1) VeR=ohVy I=-1A 70 | | 240 DC Current Gain (Note) CE C hFR(2) SN VcE==1V, Ic=-4A 30 | Saturation |Collector-Emitter | VCR(sat) |IG@=>s4A, Ip=0.4A | 0.3 | 0.5 Vv Voltage _| Base-Emitter VeK(saty |Ic=4A, Ip=0.4A |-0.9]-14 Transition Frequency ft VcE= 4V, Icq=-1A 10; | MHz Collector Output\Capacitance Cob VcB=10V, In=0, f=1MHz 250 | pF Turn-on Tim | toy INPUT Jpg OUTPUT) 04) 2048 I i eo Switching . B2 Bl S Time Storage Time tstp atl _ 2.5 | ps . Ipi =Ip2 =0.3A __ Fall Time te purty cycnezi~ = OO*~8V | _ | 05] Note : hppi1) Classification O : 70~140, Y : 120~240 2001-05-24 TOSHIBA 2$B753 Ic VCE COMMON EMITTER Te=25C 140 120 100 80 -60 -40 COLLECTOR CURRENT Ic (A) 0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE Veg (V) VCE Ic COMMON EMITTER Te= 100C Ip=20mA [-40/ -1 COLLECTOR-EMITTER VOLTAGE Vor () 0 -1 -2 -3 -4 -5 6 -7 COLLECTOR\CURRENT_ Ic fA) hFE Ic 1000 COMMON EMITTER 500 Vog=-1V 300 Te=100C 25 100 50 DC CURRENT GAIN bpp 30 10 0.03 -0.1 -0.3 -1 -3 10 COLLECTOR CURRENT Ic (A) VCE Ic | = io COMMON EMITTER I = o Tco=25C | S to +40 100 fF 200 Veg (Vv) | S ao | S ih COLLECTOR-EMITTER VOLTAGE | io 0 Al -2 -3 4 +5 -6 -7 COLLECTOR CURRENT/ I )(A) VCE \ Ic V2 COMMON EMITTER | ay o Te= 55C | o Ip=20mA [+ 100 | 150 VcE (Vv) I a 1 ib 500 600 COLLECTOR-EMITTER VOLTAGE t g io 0 -1 -2 -3 -4 -5 -6 -7 COLLECTOR CURRENT Ic (A) VcE(sat) Ic COMMON EMITTER I/Ip=10 Te= 100C COLLECTOR-EMITTER SATURATION VOLTAGE Vck(sat) (VY) 0.08 -0.1 0.3 -1 3 -10 COLLECTOR CURRENT Ic (A) 2001-05-24 TOSHIBA 2$B753 VBE(sat) IC -10 COMMON EMITTER 5 Ig/Ip=10 -3 -1 Te= 55C -0.5 25 03 100 BASE-EMITTER SATURATION VOLTAGE VpxE(sat) (V) -01 0.02 -0.1 -0.3 -1 -3 10 COLLECTOR CURRENT Ic (A) SAFE OPERATING AREA PT PTT Ig MAX. (PULSED) > -10 t | [ [ T A \ | l Lt \ \ Ic MAX. X (CONTINUOUS) \\ 3 ae WN \ Noms, DC OPERATION, To=25C \ N Hl AN \ 100ms% \ LTT \ TT \ co 0.5] > SINGLE NONREPETITIVE \ PULSE Te=25C KN CURVES MUST BE DERATED AN LINEARLY WITH INCREASE a IN TEMPERATURE. voro-MAx, \ -1 -3 - 30 100 on Ic (A) COLLECTOR CURRENT TL 1 Hy -0.3 LM ee COLLECTOR-EMITTER V@LTAGE Vcg (@) COLLECTOR POWER DISSIPATION COLLECTOR CURRENT Ic (A) Po WW) Ic VBE | | COMMON EMITTER -6 | VckS-1V Tc=100C | 58 -4 25 Lo 0 0.8 1.6 \2.4 3.2 BASE-EMITTER YOLTAGE/ VBR) CV) PC_ Ta an @)Te=Ta (NFINITE HEAT SINK) 40 TV @ 300X300 X2mm AL (HEAT SINK) 200X200X2mm AL \ (HEAT SINK) @ 150X150X2mm Ae $2 (HEAT SINK) 100X100x2mm Ag \ (HEAT SINK) 70x70x2mm Ag (HEAT SINK) NI] @ 50x50x2mm Ae (HEAT SINK) 35xX35X2mm AL (HEAT SINK) @ 25xX25x2mm Ae (HEAT SINK) 1 NO HEAT SINK \ 36 N 28 LT 24 20 T eleatte \/ A |AS fy Li/ / / WAZA UML WEL 16 N \ NIN AAA NA ~~ ) 127 a T N N s T | 2] [O as N | | of [ T YT ] So 40 60 80 100 120 140 160 180 AMBIENT TEMPERATURE Ta (C) 2001-05-24 TOSHIBA 2SB753 RESTRICTIONS ON PRODUCT USE 000707EAA @ TOSHIBA is continually working toimpreve the quality and reliability of its products. Nevertheless, semiconductor devices jin general can malfunction jor fail due to their inherent electrical sensitivity and vulnerability\to /physical stress. It isthe responsibility of the buyer, when utilizing TOSHIBA products,7to-comply with the standards of safety in making a safe design for the entire system, and to \avoid situations in\which a malfunction or failure of such TOSHIBA products could cause _loss-of human life, bodily injury or damage to property. In developing your designs; please ensure that-TOSHIBA products are used within specified operating ranges asset forth in) the most recent. TOSHIBA products specifications. Also, please keep in mind the precautions and,~conditions< set forth in the Handling Guide for Semiconductor Devices//orTOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA productsNJisted in this documentyare intended for usage in general electronics applications (computer, prsonal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These; TOSHIBA products are neither intended nor warranted forusage in equipment that requires extraordinarily high quality and/or reliability or a malfunctionor failure of which\\may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include\atomic energy control instruments, airplane or spaceship instruments,transportation/ /instrumnts, traffic signal instruments, combustion control instruments, medical instruments, all) types of safety devices, etc.. Unintended Usage of TOSHIBA preducts listed in this documert-shall be made at the customer's own risk. @ The information contained Herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 4 2001-05-24