QP1631 / QP1632
QP1633 / QP1634
October 9, 2007
2945 Oakmead Village Ct, Santa Clara, CA 95051 Phone: (408) 737-0992 Fax: (408) 736—8708 Internet: www.qpsemi.com
CMOS Dual Peripheral Drivers
QP1631 – AND
QP1632 – NAND
QP1633 – OR
QP1634 – NOR
General Description
The QP163x series of dual peripheral drivers are designed to be a universal set of interface components for CMOS
circuits.
Each circuit has CMOS compatible inputs with thresholds that track as a function of VCC (approximately 1/2 VCC). The
inputs are PNPs providing the high impedance necessary for interfacing with CMOS.
Outputs have high voltage capability; minimum breakdown voltage is 56V at 250 uA.
The outputs are Darlington connected transistors. This allows high current operation (300 mA max) at low internal VCC
current levels since base drive for the output transistor is obtained from the load in proportion to the required loading
conditions. This is essential in order to minimize loading on the CMOS logic supply.
Typical VCC = 5V power is 28 mW with both outputs ON.
VCC operating range is 4.5V to 15V.
The circuit also features output transistor protection, if the VCC supply is lost, by forcing the output into the high
impedance OFF state with the same breakdown levels as when VCC was applied.
Pin-outs are the same as the respective logic functions found in the popular series of circuits; DS75451, DS75461. This
feature allows direct conversion of present systems to the MM74C CMOS family and DS163x series circuits with great
power savings.
The QP163x series is also TTL compatible at VCC = 5V.
The device type(s) features:
- CMOS compatible inputs
- High impedance inputs; PNP's
- High output voltage breakdown 56V min
- High output current capability 300 mA max
- Same pin-outs and logic functions as DS75451 and DS75461 series circuits
- Low VCC power dissipation (~28 mW both outputs ``ON'' at 5V)
The device/family is constructed using High Voltage Bi-Polar processing.
QP Semiconductor products are not authorized for use in any space applications. The inclusion of QP Semiconductor
products in space applications implies that the space application manufacturer assumes all risk of such use and in doing
so indemnifies QP Semiconductor against all charges.
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 2 of 8
Block Diagrams -(Dual-In-Line and Metal Can Packages)
QP163x
Equivalent Circuit
Pin # Function Pin # Function
Pin 1 A1 – Input Pin 5 X2 – Ouput
Pin 2 B1 – Input Pin 6 A2 – Input
Pin 3 X1 – Output Pin 7 B2 – Input
Pin 4 Ground Pin 8 Vcc
Test Table
Input Other Output
Device Under
Test Input Apply Measure
QP1631 VIH
VIL
VIH
VCC
VOH
IOL
IOH
VOL
QP1632 VIH
VIL
VIH
VCC
IOL
VOH
VOL
IOH
QP1633 VIH
VIL
GND
VIL
VOH
IOL
IOH
VOL
QP1634 VIH
VIL
GND
VIL
IOL
VOH
VOL
IOH
Truth Table
Input Out
A B 1631 1632 1633 1634
0 0 0 1 0 1
0 1 0 1 1 0
1 0 0 1 1 0
1 1 1 0 1 0
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 3 of 8
Connection Diagrams
CERDIP Can
QP1631
QP1632
QP1633
QP1634
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 4 of 8
Absolute Maximum Ratings
Stresses above the AMR may cause permanent damage, extended operation at AMR may degrade performance and affect reliability
Condition Units Notes
Power Supply and Input Voltage -0.5 to +16.0 Volts DC
Voltage at Inputs - 0.3 to Vcc+0.3 Volts DC
Output Voltage 56 Volts
Storage Temperature Range -65 to +150 ºC
Lead Temperature (soldering, 10 seconds) +260 ºC
Junction Temperature (TJ) +175 ºC
Maximum Power Dissipation Hermetic DIP 1133 mW /1
Maximum Power Dissipation Hermetic CAN 787 mW /2
Recommended Operating Conditions
Condition Units Notes
Supply Voltage Range (VCC) 4.5 to 15 Volts DC
Operating Range (Tc) -55C to +125 ºC /1 /2
/1 – Derate 7.6 mW/°C above 25°C
/2 – Derate 5.2 mW/°C above 25°C
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS
Test Symbol Conditions
-55ºC TA+125ºC
Unless Otherwise Specified
Min Max Unit
Input High Voltage VIH V
CC = 5V 3.5 V
V
CC = 10V 8.0 V
V
CC = 15V 12.5 V
Input Low Voltage VIL V
CC = 5V 1.5 V
V
CC = 10V 2.0 V
V
CC = 15V 2.5 V
Input Low Current IIL V
CC = 5V, VIN = 0.4V -115.5 μA
V
CC = 15V, VIN = 0.4V -360 μA
Output High Voltage VOH V
CC = 15V, IOH= 250uA 56 V
Output Low Voltage VOL V
CC = 4.5V, IOH= 100mA 1.1 V
V
CC = 4.5V, IOH= 300mA 1.4 V
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 5 of 8
TABLE I – ELECTRICAL PERFORMANCE CHARACTERISTICS
Test Symbol Conditions
-55ºC TA+125ºC
Unless Otherwise Specified
Min Max Unit
Power Supply Current ICCL
VIH=VCC, VIL=GND QP1631 VCC = 5V, Vout = Low 11 mA
V
CC = 15V, Vout = Low 20 mA
QP1632 VCC = 5V, Vout = Low 12 mA
V
CC = 15V, Vout = Low 23 mA
QP1633 VCC = 5V, Vout = Low 12 mA
V
CC = 15V, Vout = Low 23 mA
QP1634 VCC = 5V, Vout = Low 12 mA
V
CC = 15V, Vout = Low 23 mA
ICCH
QP1631 VCC = 5V, Vout = High 3 mA
V
CC = 15V, Vout = High 10 mA
QP1632 VCC = 5V, Vout = High 3.5 mA
V
CC = 15V, Vout = High 14 mA
QP1633 VCC = 5V, Vout = High 4 mA
V
CC = 15V, Vout = High 15 mA
QP1634 VCC = 5V, Vout = High 5 mA
V
CC = 15V, Vout = High 18 mA
Propagation Delay,
Input to Output
QP1631
t
PDL
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.50 us
t
PDL
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.88 us
t
PDH
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.20 us
t
PDH
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.50 us
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 6 of 8
Propagation Delay,
Input to Output
QP1632
t
PDL
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.20 us
t
PDL
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.55 us
t
PDH
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.20 us
t
PDH
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 1.50 us
QP1633
t
PDL
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 2.00 us
t
PDL
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 2.00 us
t
PDH
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.001 0.75 us
t
PDH
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.001 0.75 us
QP1634
t
PDL
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 2.00 us
t
PDL
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.01 2.00 us
t
PDH
25ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.001 0.75 us
t
PDH
-55ºC, 125ºC
VCC = 5.0V
CL = 15pf RL=50
Vout=10V
0.001 0.75 us
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 7 of 8
IIH
IIL
Notes:
Each input tested separately
QP1631/32 Input not under
Test at VCC.
QP1633/34 Input not under
test at GND.
ICC for AND/NAND
QP1631 / QP1632 / QP1633 / QP1634
QP SEMI, 2945 Oakmead Village Court, Santa Clara, CA 95051 Page 8 of 8
Ordering Information
Part Number Package (Mil-Std-1835) Generic
5962-8863101GA G – MACY1-X8 – 8 Lead Can QP1631
5962-8863101PA P – GDIP1-T8 or CDIP2-T8 QP1631
5962-9052201GA G – MACY1-X8 – 8 Lead Can QP1632
5962-9052201PA P – GDIP1-T8 or CDIP2-T8 QP1632
QP1633/GA G – MACY1-X8 – 8 Lead Can QP1633
QP1633/PA P – GDIP1-T8 or CDIP2-T8 QP1633
5962-8982101GA G – MACY1-X8 – 8 Lead Can QP1634
5962-8982101PA P – GDIP1-T8 or CDIP2-T8 QP1634
QP Semiconductor supports Source Control Drawing (SCD), and custom package development for this product family.
Notes:
Package outline information and specifications are defined by Mil-Std-1835 package dimension requirements.
“-MIL” products manufactured by QP Semiconductor are compliant to the assembly, burn-in, test and quality co nformance
requirements of Test Methods 50 04 & 5005 of Mil-Std-883 for Class B devices. This datasheet defines the electrical test
requirements for the device(s).
The listed drawings, Mil-PRF-38535, Mil-Std-88 3 and Mil-Std-1835 are available online at http://www.dscc.dla.mil/
Additional information is available at our website http://www.qpsemi.com