Smart Sense High-Side
Power Switch
Features
• Short circuit protection
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output
• Fast demagnetization of inductive loads
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump (with
external GND-resistor)
• Reverse battery protection (with external GND-resistor)
• Loss of ground and loss of
V
bb protection
•Electrostatic discharge (ESD) protection
Application
•µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Block Diagram
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Product Summary
Operating voltage V
bb(on)
5.0 ... 34 V
On-state resistance R
ON
30 mΩ
Load current (ISO) I
L(ISO)
12.6 A
Current limitation I
L(SCr)
24 A
Package
TO220-7-11 TO263-7-2 TO220-7-12
1 1 1
Standard (staggered) SMD Straight
• AEC qualified
• Green product (RoHS compliant)
Data Sheet 1 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Pin Symbol Function
1 ST Diagnostic feedback: open drain, invers to input level
2 GND Logic ground
3 IN Input, activates the power switch in case of logical high signal
4 Vbb Positive power supply voltage, the tab is shorted to this pin
5 IS Sense current output, proportional to the load current, zero in
the case of current limitation of load current
6 & 7 OUT
(Load, L) Output, protected high-side power output to the load.
Both output pins have to be connected in parallel for operation
according this spec (e.g. kILIS).
Design the wiring for the max. short circuit current
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4)
V
bb 43 V
Supply voltage for full short circuit protection
T
j Start=-40 ...+150°C
V
bb 34 V
Load dump protection1)VLoadDump = VA + Vs, VA = 13.5V
R
I2)= 2 Ω,
R
L= 1 Ω,
t
d= 200 ms, IN= low or high
V
Load dump3)60 V
Load current (Short circuit current, see page 5)
I
L self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), TC≤ 25 °C
P
tot 85 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V,
T
j,start = 150°C,
T
C = 150°C const.
I
L= 12.6 A, ZL= 4,2 mH, 0 Ω:
I
L= 4 A, ZL= 330 mH, 0 Ω:
E
AS
E
AS
0,41
3,5
J
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST, IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
V
ESD 1.0
4.0
8.0
kV
Input voltage (DC)
V
IN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 8
I
IN
I
ST
I
IS
±2.0
±5.0
±14
mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended).
2)
R
I = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839
Data Sheet 2 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
R
thJC -- -- 1.47 K/W
junction - ambient (free air):
R
thJA -- -- 75
SMD version, device on PCB4): -- 33 --
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 6&7)
I
L = 5 A
T
j=25 °C:
T
j=150 °C:
R
ON -- 27
54
30
60
mΩ
Output voltage drop limitation at small load
currents (pin 4 to 6&7), see page 14
I
L = 0.5 A
T
j =-40...+150°C:
V
ON(NL) -- 50 -- mV
Nominal load current, ISO Norm (pin 4 to 6&7)
V
ON = 0.5 V,
T
C= 85 °C
I
L(ISO) 11.4 12.6 -- A
Nominal load current, device on PCB4)
T
A= 85 °C,
T
j≤ 150 °C
V
ON ≤ 0.5 V,
I
L(NOM) 4.0 4.5 -- A
Output current (pin 6&7) while GND disconnected
or GND pulled up,
V
bb=30 V,
V
IN= 0, see diagram page
9; not subject to production test, specified by design
I
L(GNDhigh) -- -- 8 mA
Turn-on time IN to 90%
V
OUT:
Turn-off time IN to 10%
V
OUT:
R
L = 12 Ω,
T
j =-40...+150°C
t
on
t
off
25
25
70
80
150
200
µs
Slew rate on
10 to 30%
V
OUT,
R
L= 12 Ω,
T
j =-40...+150°C
d
V
/dton 0.1 -- 1 V/µs
Slew rate off
70 to 40%
V
OUT,
R
L= 12 Ω,
T
j =-40...+150°C
-d
V
/dtoff 0.1 -- 1 V/µs
Data Sheet 3 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Parameter and Conditions Symbol Values Unit
a
t
T
j = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
Operating Parameters
Operating voltage 5)
T
j =-40...+150°C:
V
bb(on) 5.0 -- 34 V
Undervoltage shutdown
T
j =-40...+150°C:
V
bb(under) 3.2 -- 5.0 V
Undervoltage restart
T
j =-40...+25°C:
T
j =+150°C:
V
bb(u rst) -- 4.5 5.5
6.0
V
Undervoltage restart of charge pump
see diagram page 13
T
j =-40...+25°C:
T
j =25...150°C:
V
bb(ucp) --
--
4.7
--
6.5
7.0
V
Undervoltage hysteresis
∆
V
bb(under) =
V
bb(u rst) -
V
bb(under)
∆
V
bb(under) -- 0.5 -- V
Overvoltage shutdown
T
j =-40...+150°C:
V
bb(over) 34 -- 43 V
Overvoltage restart
T
j =-40...+150°C:
V
bb(o rst) 33 -- -- V
Overvoltage hysteresis
T
j =-40...+150°C: ∆
V
bb(over) -- 1 -- V
Overvoltage protection6)
T
j =-40°C:
I
bb=40 mA
T
j =+25...+150°C
V
bb(AZ) 41
43
--
47
--
52
V
Standby current (pin 4)
V
IN=0
T
j=-40...+25°C:
T
j= 150°C:
I
bb(off) --
--
4
12
15
25
µA
Off state output current (included in
I
bb(off))
V
IN=0,
T
j =-40...+150°C:
I
L(off) -- -- 10 µA
Operating current (Pin 2)7),
V
IN=5 V
I
GND -- 1.2 3 mA
5
)At supply voltage increase up to
V
bb= 4.7 V typ without charge pump,
V
OUT ≈
V
bb - 2 V
6
)Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also
V
ON(CL) in table of protection functions and
circuit diagram page 9.
7
)Add
I
ST, if
I
ST > 0, add
I
IN, if
V
IN>5.5 V
Data Sheet 4 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Parameter and Conditions Symbol Values Unit
at
T
j = 25 °C,
V
bb = 12 V unless otherwise specified
min typ max
Protection Functions
8)
Initial peak short circuit current limit
(pin 4 to 6&7)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
48
40
31
56
50
37
65
58
45
A
Repetitive short circuit shutdown current limit
I
L(SCr)
T
j =
T
jt (see timing diagrams, page 12)
-- 24 -- A
Output clamp
(inductive load switch off)
at
V
OUT =
V
bb -
V
ON(CL);
I
L= 40 mA,
T
j
=-40°C:
T
j
=+25..+150°C:
V
ON(CL)
41
43
--
47
--
52
V
Thermal overload trip temperature
T
jt
150 -- -- °C
Thermal hysteresis
∆
T
jt
-- 10 -- K
Reverse battery
(pin 4 to 2) 9
) -
V
bb
-- -- 32 V
Reverse battery voltage drop
(Vout > Vbb)
I
L = -5 A
T
j=150 °C:
-V
ON(rev)
-- 600 -- mV
Diagnostic Characteristics
Current sense ratio
10)
, static on-condition,
V
IS = 0...5 V,
V
bb(on) = 6.511)...27V,
k
ILIS =
I
L /
I
IS
T
j
= -40°C,
I
L
= 5 A:
k
ILIS
4550 5000 6000
T
j
= -40°C,
I
L
= 0.5 A: 3300 5000 8000
T
j
= 25...+150°C,
I
L
= 5 A:
,
T
j
= 25...+150°C,
I
L
= 0.5 A:
4550
4000
5000
5000
5550
6500
Current sense output voltage limitation
T
j = -40 ...+150°C
I
IS = 0,
I
L = 5 A:
V
IS(lim)
5.4 6.1 6.9 V
Current sense leakage/offset current
T
j = -40 ...+150°C
V
IN=0,
V
IS = 0,
I
L = 0:
I
IS(LL)
0--1
µA
V
IN=5 V,
V
IS = 0,
I
L = 0:
I
IS(LH)
0 -- 15
V
IN=5 V,
V
IS = 0,
V
OUT = 0
(short circuit):
I
IS(SH)12 )
0 -- 10
8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 9).
10) This range for the current sense ratio refers to all devices. The accuracy of the
k
ILIS can be raised at least by
a factor of two by matching the value of
k
ILIS for every single device.
In the case of current limitation the sense current
I
IS is zero and the diagnostic feedback potential
V
ST is
High. See figure 2b, page 11.
11) Valid if
V
bb(u rst) was exceeded before.
12) not subject to production test, specified by design
Data Sheet 5 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
BTS
640
S2
P
arameter and Conditions Symbol Values Unit
a
t
T
j = 25 °C,
V
bb = 12 V unless otherwise specified min typ max
C
urrent sense settling time to
I
IS static±10% after
positive input slope13) ,
I
L = 0 5 A,
T
j= -40...+150°C
t
son(IS) -- -- 300 µs
C
urrent sense settling time to 10% of
I
IS static after
negative input slope13),
I
L = 5 0 A ,
T
j= -40...+150°C
t
soff(IS) -- 30 100 µs
C
urrent sense rise time (60% to 90%) after change
of load current13) ,
I
L = 2.5 5 A
t
slc(IS) -- 10 -- µs
O
pen load detection voltage14)(off-condition)
T
j=-40..150°C:
V
OUT(OL) 2 3 4 V
Internal output pull down
(pin 6 to 2),
V
OUT=5 V,
T
j=-40..150°C
R
O5 15 40 kΩ
I
nput and Status Feedback15)
Input resistance
see circuit page 8
R
I3,0 4,5 7,0 kΩ
Input turn-on threshold voltage
T
j =-40..+150°C:
V
IN(T+) -- -- 3.5 V
Input turn-off threshold voltage
T
j =-40..+150°C:
V
IN(T-) 1.5 -- -- V
Input threshold hysteresis ∆
V
IN(T) -- 0.5 -- V
O
ff state input current (pin 3),
V
IN = 0.4 V
T
j =-40..+150°C
I
IN(off) 1 -- 50 µA
O
n state input current (pin 3),
V
IN = 5 V
T
j =-40..+150°C
I
IN(on) 20 50 90 µA
Delay time for status with open load
after Input neg. slope (see diagram page 13) td(ST OL3) -- 400 -- µs
S
tatus delay after positive input slope13)
T
j=-40 ... +150°C:
t
don(ST) -- 13 -- µs
S
tatus delay after negative input slope13)
T
j=-40 ... +150°C:
t
doff(ST) -- 1 -- µs
S
tatus output (open drain)
Zener limit voltage
T
j =-40...+150°C,
I
ST = +1.6 mA:
ST low voltage
T
j =-40...+25°C,
I
ST = +1.6 mA:
T
j = +150°C,
I
ST = +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
6.9
0.4
0.7
V
S
tatus leakage current,
V
ST = 5 V,
T
j=25 ... +150°C:
I
ST(high) -- -- 2 µA
1
3) not subject to production test, specified by design
1
4) External pull up resistor required for open load detection in off state.
1
5) If a ground resistor RGND is used, add the voltage drop across this resistor.
Data Sheet 6 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Truth Table
Input Output Status Current
Sense
level level level IIS
Normal
operation
L
H
L
H
H
L
0
nominal
Current-
limitation
L
H
L
H
H
H
0
0
Short circuit to
GND
L
H
L
L16)
H
H
0
0
Over-
temperature
L
H
L
L
H
H
0
0
Short circuit to
Vbb
L
H
H
H
L17)
L
0
<nominal 18)
Open load L
H
L19)
H
H (L20))
L
0
0
Undervoltage L
H
L
L
H
L
0
0
Overvoltage L
H
L
L
H
L
0
0
Negative output
voltage clamp
L L H 0
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
16) The voltage drop over the power transistor is
V
bb-
V
OUT>typ.3V. Under this condition the sense current
I
IS is
zero
17) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
18) Low ohmic short to
V
bb may reduce the output current
I
L and therefore also the sense current
I
IS.
19) Power Transistor off, high impedance
20) with external resistor between pin 4 and pin 6&7
Data Sheet 7 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Terms
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Input circuit (ESD protection)
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,
,
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
S
tatus output
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56721
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 440 Ω at 1.6 mA,
The use of ESD zener
diodes as voltage clamp at DC conditions is not
recommended.
Current sense output
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5
,6
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9
ESD-Zener diode: 6.1 V typ., max 14 mA;
R
IS
= 1 kΩ nominal
Inductive and overvoltage output clamp
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9=
921
V
ON clamped to 47 V typ.
Data Sheet 8 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Overvoltage protection of logic part
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V
Z1 = 6.1 V typ.,
V
Z2 = 47 V typ.,
R
I= 4 kΩ typ,
R
GND= 150 Ω,
R
ST= 15 kΩ,
R
IS= 1 kΩ,
R
V= 15 kΩ,
Reverse battery protection
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The load
R
L is inverse on, temperature protection is
not active
R
GND= 150 Ω,
R
I= 4 kΩ typ,
R
ST≥ 500 Ω,
R
IS≥ 200 Ω,
R
V≥ 500 Ω,
Open-load detection
OFF-state diagnostic condition:
V
OUT > 3 V typ.; IN low
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Any kind of load. In case of Input=high is
V
OUT ≈
V
IN -
V
IN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
352)(7
9
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287
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Any kind of load. If VGND >
V
IN -
V
IN(T+) device stays off
Due to VGND >0, no VST = low signal available.
V
bb
disconnect with energized inductive
load
352)(7
9
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287
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9EE
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KLJK
Normal load current can be handled by the PROFET
itself.
Data Sheet 9 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Vbb disconnect with charged external
inductive load
352)(7
9
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287
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If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
352)(7
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287
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(
(
($6
EE
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Energy stored in load inductance:
E
L
=
1/2·
L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
> 0 Ω:
E
AS
=I
L
·
L
2
·
R
L
·(
V
bb
+|V
OUT(CL)
|)
·OQ
(1+ I
L
·
R
L
|V
OUT(CL)
| )
Data Sheet 10 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
,1
67
287
/
W
9
,
,,6
W
son
(
IS
)
WW
slc(IS)slc(IS)
/RDG /RDG
soff
(
IS
)
W
W
don(ST)
W
doff
(
ST
)
WW
on off
The sense signal is not valid during settling time after turn or
change of load current.
Figure 1b: Vbb turn on:
,1
9
/
W
,
EE
67
,,6
tdllditi
Figure 2a: Switching a lamp
,1
67
287
/
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9
,
,,6
Figure 2b: Switching a lamp with current limit:
,1
67
287
/
W
9
,
,,6
Data Sheet 11 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
http://store.iiic.cc/
Figure 2c: Switching an inductive load:
,1
67
W
9
,
287
/
,,6
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
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,
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,,6
/
Heating up may require several milliseconds, depending on
external conditions
I
L(SCp) = 50 A typ. increases with decreasing temperature.
Figure 4a: Overtemperature:
Reset if
T
j <
T
jt
67
-
W
7
,1
,/
,,6
Figure 5a: Open load: detection in ON-state,
open load occurs in on-state
,1
67
287
/
W
9
,
RSHQQRUPDO QRUPDO
,,6
Data Sheet 12 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
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Figure 5b: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
,1
67
287
W
9
,
RSHQORDG
/
,,6
G672/
W
Figure 6a: Undervoltage:
,1
9
W
EE
67
VV
bb(under) bb(u cp)
9
,/
,,6
bb(u rst)
QRWGHILQHG
Figure 6b: Undervoltage restart of charge pump
EEXQGHU
9
9
EEXUVW
9
EERYHU
9
EERUVW
9
EEXFS
RIIVWDWH
RQVWDWH
9
21&/
9
EE
9
RQ
RIIVWDWH
charge pump starts at
V
bb(ucp)
=4.7 V typ.
Figure 7a: Overvoltage:
,1
9
W
bb
67
ON(CL)
VV
bb(over)
V
bb(o rst)
,/
,,6
Data Sheet 13 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
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Figure 8a: Current sense versus load current:













,/
>$@
>P$@ ,,6
Figure 8b: Current sense ratio
21
:




,/
>$@
N,/,6
Figure 9a: Output voltage drop versus load current:




,/
>$@
>9@ 921
211/
9
21
5
21
This range for the current sense ratio refers to all
devices. The accuracy of the
k
ILIS can be raised a
t
least by a factor of two by matching the value of
k
ILIS for every single device.
Data Sheet 14 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
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Data Sheet 15 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Package Outlines
6.6
7.5
9.9 A
6.5
±0.2
9.2
±0.3
1
10.2
±0.15
(14.9)
0...0.15
7 x 0.6
+0.1
-0.03
6 x 1.27 0.25
M
AB
0.05
B
1.3
+0.1
-0.02
4.4
0.1
2.4
2.7
±0.5
4.7
±0.5
±0.15
0.5
8° MAX.
All metal sufaces tin plated, except area of cut .
Back side, heatsink contour
1) Shear and punch direction no burrs this surface
0.1 B
1)
17
Figure 1 PG-TO-263-7-2 (Plastic Dual Small Outline Package) (RoHS-compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
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Data Sheet 16 V1.1, 2008-19-08
Smart High-Side Power Switch
BTS640S2G
Revision History
Version Date Changes
V1.1 2008-19-08 Creation of the green datasheet.
First page :
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
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Edition 2008-19-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 8/19/08.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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