/TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E 62mmC-Series/IGBTHE 62mmC-SeriesmodulewithfastTrench/FieldstopIGBT4andEmitterControlledHEdiode /PreliminaryData VCES = 1200V IC nom = 450A / ICRM = 900A * * * * UPS TypicalApplications * HighFrequencySwitchingApplication * HighPowerConverters * SolarApplications * UPSSystems * * Tvjop=150C * IGBT4 ElectricalFeatures * IncreasedDClinkVoltage * Tvjop=150C * TrenchIGBT4 * 4kV1 * CTI>400 * * * * RoHS * MechanicalFeatures * 4kVAC1minInsulation * PackagewithCTI>400 * HighCreepageandClearanceDistances * IsolatedBasePlate * CopperBasePlate * RoHScompliant * StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V ContinuousDCcollectorcurrent TC = 100C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 450 520 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 900 A Totalpowerdissipation TC = 25C, Tvj max = 175C Ptot 2400 W VGES +/-20 V Gate-emitterpeakvoltage /CharacteristicValues Collector-emittersaturationvoltage min. IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V IC = 450 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C VCE sat A A typ. max. 1,75 2,00 2,05 2,15 V V V 5,8 6,4 V Gatethresholdvoltage IC = 17,0 mA, VCE = VGE, Tvj = 25C Gatecharge VGE = -15 V ... +15 V QG 3,70 C Internalgateresistor Tvj = 25C RGint 1,9 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 28,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,10 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA VGEth () Turn-ondelaytime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGon = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Risetime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGon = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-offdelaytime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGoff = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Falltime,inductiveload IC = 450 A, VCE = 600 V VGE = 15 V RGoff = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C () Turn-onenergylossperpulse IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25C VGE = 15 V, di/dt = 9000 A/s (Tvj = 150C) Tvj = 125C RGon = 1,0 Tvj = 150C ( Turn-offenergylossperpulse 5,2 0,20 0,25 0,27 s s s 0,045 0,05 0,055 s s s 0,50 0,60 0,62 s s s 0,10 0,16 0,18 s s s Eon 19,0 30,0 36,0 mJ mJ mJ IC = 450 A, VCE = 600 V, LS = 30 nH Tvj = 25C VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C) Tvj = 125C RGoff = 1,0 Tvj = 150C Eoff 33,0 50,0 56,0 mJ mJ mJ SCdata VGE 15 V, VCC = 800 V VCEmax = VCES -LsCE *di/dt ISC 1800 A Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH Temperatureunderswitchingconditions tP 10 s, Tvj = 150C td on tr td off tf Tvj op preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 2 0,062 K/W 0,031 -40 K/W 150 C /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1200 V IF 450 A IFRM 900 A It 34000 32000 /CharacteristicValues min. As As typ. max. 2,25 VF 1,70 1,75 1,75 IF = 450 A, - diF/dt = 9000 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 490 550 560 A A A Recoveredcharge IF = 450 A, - diF/dt = 9000 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 44,0 80,0 90,0 C C C Reverserecoveryenergy IF = 450 A, - diF/dt = 9000 A/s (Tvj=150C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 19,0 35,0 39,0 mJ mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH Forwardvoltage IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V IF = 450 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C Peakreverserecoverycurrent Temperatureunderswitchingconditions Tvj op preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 3 V V V 0,11 K/W 0,055 -40 K/W 150 C /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Cu Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 29,0 23,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 23,0 11,0 mm > 400 Comperativetrackingindex CTI min. Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature typ. max. RthCH 0,01 K/W LsCE 20 nH RCC'+EE' 0,70 m Tstg -40 125 C Mountingtorqueformodulmounting M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm Weight G preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 4 340 g /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 900 900 Tvj = 25C Tvj = 125C Tvj = 150C 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 800 IC [A] IC [A] 800 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 800 900 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=1,RGoff=1,VCE=600V 900 120 Tvj = 25C Tvj = 125C Tvj = 150C 800 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 100 700 80 500 E [mJ] IC [A] 600 400 300 60 40 200 20 100 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 5 0 100 200 300 400 500 IC [A] 600 700 /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=450A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 220 0,1 Eon, Tvj = 125C Eoff, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 150C 200 180 ZthJC : IGBT 160 ZthJC [K/W] E [mJ] 140 120 100 0,01 80 60 40 i: 1 2 3 4 ri[K/W]: 0,00372 0,02046 0,01984 0,01798 i[s]: 0,01 0,02 0,05 0,1 20 0 0 1 2 3 4 5 6 RG [] 7 8 9 0,001 0,001 10 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1,Tvj=150C 1 10 900 IC, Modul IC, Chip 900 810 800 720 700 630 600 540 IF [A] IC [A] 0,1 t [s] ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1000 500 360 300 270 200 180 100 90 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 6 Tvj = 25C Tvj = 125C Tvj = 150C 450 400 0 0,01 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=450A,VCE=600V 55 50 Erec, Tvj = 125C Erec, Tvj = 150C 50 45 40 40 35 30 30 E [mJ] E [mJ] 35 25 25 20 20 15 15 10 10 5 5 0 Erec, Tvj = 125C Erec, Tvj = 150C 45 0 100 200 300 400 500 IF [A] 600 700 800 0 900 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC : Diode ZthJC [K/W] 0,1 0,01 i: 1 2 3 4 ri[K/W]: 0,0066 0,0363 0,0352 0,0319 i[s]: 0,01 0,02 0,05 0,1 0,001 0,001 0,01 0,1 t [s] 1 10 preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 7 0 1 2 3 4 5 6 RG [] 7 8 9 10 /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData /circuit_diagram_headline /packageoutlines j j n n i i preparedby:MK dateofpublication:2014-03-07 approvedby:JDB revision:2.0 8 /TechnicalInformation IGBT- IGBT-modules FF450R12KE4_E PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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