NPN LOW LEVEL TABLE 1 NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vceo), decreasing Collector Current (Ic}, Power Dissipation (P;o;) etc. Max Vce(sar hee Min fy Max at at at Prot Type Vee | Vceo | Ic at Tamp | Package] Comple- le | lg | Min.{Max.! Ic le | =25C ment Vv Vv mA| V [mA | mA mA{|MHz|mA| mW ZT92 120 | 100 |1000/1.2 | 200} 20} 65) 200 | 200); 60 | 50 | 1000 | TO-39 ZT91 120 | 100 |1000}1.2 | 200} 20} 40} 120 | 200); 60] 50 | 1000 | TO-39 _ 2N2405 | 120 90 | 1000] 0.2 50; 5} 60] 200) 150) | } 1000 | TO-39 _ ZT93 120 80 |1000/0.5 | 150] 15] 40] 120}; 150) 60/50) 1000 | TO-39 2N1893 | 120 80 | 500} 1.2 50] 5] 40] 120]150) | ]| 800 | TO-39 2N2102 | 120 65 |1000}0.5 | 150! 15! 40! 120|150| 60 | 50 | 1000 | TO-39 | 2N4036 ZT88 100 80 | 500/0.2 50 751170 | 10} 200} 10) 300 | TO-18 _ ZT86 100 80 | 500)0.2 50 38| 85] 10) 200] 10] 300 | TO-18 BFX85 {| 100 60 |1000]}0.35] 150} 15] 70} | 150; 50 ) 50; 800 | TO-39 _ BFX84 { 100 60 |1000]0.35; 150} 15} 30} | 150; 50] 50; 800 | TO-39 _ BC141 | 100 60 |1000]1.0 }1000; 100] 40] 250 | 100} 50 | 50 | 3700* | TO-39 | BC161 BC140 80 40 |1000]1.0 |1000] 100} 40] 250 | 100} 50 | 50 | 3700* | TO-39 | BC160 BFY50 80 35 |1000]0.2 | 150] 15) 30) | 150] 60 | 50 800 | TO-39 2N1613 | 75 50 |1000}1.5 | 150} 15) 40] 120! 150] 60 |} 50 800 | TO-39 2N1711 | 75 50 |1000]1.5 | 150] 15] 100) 300/150) 70 | 50 | 800 | TO-39 _ ZT89 70 70 =| 500/0.2 50! 5! 75] 250| 10| 200} 10 | 300 | TO-18 | 2T189 ZT90 60 60 |1000]0.7 | 200} 20} 60; 200 | 200) 60} 50 | 1000 | TO-39 | 27211 ZT95 60 60 |1000]1.2 | 200} 20) 30; 200/350) 60 | 50 | 1000 | TO-39/ 2T211 BCY65E} 60 60 100/ 0.35] 10/0.25) 120] 460 2| 126 | 10 | 1000* | TO-18 | BCY77 2N2270 | 60 45 |1000]0.9 | 150] 15} 50} 200] 150) 60 | 50 | 1000 | TO-39 - 2794 60 45 |1000]0.7 | 200] 20) 20} | 10] 60] 50) 1000 | TO-39 | 27210 ZT83 60 45 | 500) 0.2 50 38} 85] 10; 200 | 10 300 | TO-18 | 27183 ZT84 60 45 500} 0.2 50 5] 75| 170} 10} 200 | 10 300 TO-18 } 21184 *At Tease = 45C continued MC2 NPN SWITCHING TABLE 3 NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vceo), decreasing Collector Current (Ic), Power Dissipation (Pio), etc. Max Vceisat} Nee f;Min {Switching Times Max at at at (Max) at Type Vceo} Ic a Package | Comple- le Ip |Min.J|Max.} Ic le | ton | tore | Ic ment V ijmA! V |[mAlmA mA|MHz|mA]| ns | ns |mA 2N3262 | 100 /1500/0.6 |1000}100} 40) |500} | | 40 {750 |1000; TO-39 ZT86 80 | 500)0.2 50} 5] 38] 85] 10) 200) 10) 50*}170*} 20] TO-18 _ 2788 80 | 500/0.2 50! 5} 75) 170] 10) 200) 10] 50*}170*} 20; TO-18 _ ZT89 70 | 500)0.2 50; 5) 75)| 250] 10] 200} 10} 50*}170*} 20) TO-18 | ZT189 2N2102 | 65 /1000}0.5 | 150) 15} 40} 120] 150) 60] 50 (note 1) TO-39 | 2N4036 BFX85 60 |1000!0.35| 150) 15) 70) ~ | 150] 50} 50; 55*}360*} 150) TO-39 - BFX84 60 |1000}0.35 | 150) 15) 30) | 150] 50; 50} 55*|360*} 150| TO-39 - BCY65E |. 60] 100/0.35; 100.25) 120) 460} 2) 125 | 10)150 {800 10| TO-18 | BCY77 2N1613 | 50 |1000/1.5 | 150) 15) 40] 120) 150) 60 50 {note 1) TO-39 - 2N2270 | 45 |1000/0.9 | 150) 15] 50| 200) 150) 60 50 (note 1) TO-39 - 2783 45 | 500)/0.2 50} 5] 38] 85] 10; 200] 10) 50*/170*| 20; TO-18 | ZT183 ZT84 45 | 500/0.2 50; 5] 75) 170]. 10} 200 | 10] 50*/170*} 20] TO-18 | ZT184 BCY59 45 | 200)0.35} 10/0.25) 120) 630) 2] 125 | 10/150 /800 10| TO-18 | BCY79 2N2218A| 40 | 800/0.3 | 150) 15} 40) 120 | 150) 250 | 20 | 35 (285 | 150) TO-39 | 2N2904A 2N2219A| 40{ 800}0.3 | 150) 15] 100] 300 | 150) 300 | 20 | 35 |285 | 150] TO-39 | 2N2905A 2N2221A{ 40] 800}0.3 | 150; 15] 40] 120 | 150) 250 | 20 | 35 /285 | 150| TO-18 | 2N2906A 2N2222A| 40} 800/0.3 | 150} 15] 100} 300 | 150/ 300 ; 20 | 35 |285 | 150) TO-18 | 2N2907A BFY50 35 11000}0.2 | 150) 15} 30}; | 150] 60 | 50; 55*|360*) 150) TO-39 _ BFX86 35 11000/0.35{ 150] 15} 70; | 150} 50 | 50] 55*/360*) 150) TO-39 _ ZT81 35 | 500/0.2 10} 2] 38! 162} 10) 200} 10) 50*/170*| 20) TO-18 | ZT181 2782 35 | 500/0.2 10} 2) 75) 250} 10) 200 | 10) 50*|/170*) 20) TO-18 | ZT182 2N3512 | 35] |0.4 | 150/7.5 | 10) |500] | | 30 } 45 | 150] TO-39 _ BCY58 32 | 200]0.35] 10/0.25} 120) 630] 2| 125 | 10|150 |800 10| TO-18 | BCY78 *Typical. Note 1 tiot = 30 ns Continued MC5 ELECTRICAL CHARACTERISTICS N.P.N. MEDIUM POWER Veo| Vceo! Icso < hee ~> Vcetsat) fr | Cobo Dice Type Min. } Min.}| Max. at Veg @ le | Vce Ic Ip | Min. |Max. Geometry Vv Vii nA V [| Min.|Max..| mA} V |Max.; mA | mA |MHz] pF ZTX653 | 120 | 100 | 100 100 | 100 | 300] 500] 2 | 0.5 | 2000/ 200 |140 | G17 ZTX453 | 120 | 100 | 100 100 |. 40| 200) 150} 10 | 0.7 ; 150) 15 |150 | 15 G4 ZTX652 {100 | 80] 100 80 100; 300) 500] 2 | 0.5 | 2000)200 /140 | G17 ZTX452 |100 | 80] 100 80, 40] 150) 150] 10 | 0.7 | 150) 15 |150 ; 15 G4 MPSAO6 | 80 | 80; 100 80 50} | 100] 1 | 0.26) 100] 10 |100 | G4 ZTX651 80 | 60/ 100 60 | 100) 300] 500} 2 {0.5 | 2000|200 |140 | G17 27TX451 80} 60} 100 60 50} 150} 150) 10 | 0.35) 150) 15 }150 ) 15 G4 BFY50 80 | 35 | 500 80 30; | 150} 10 | 0.1 10; 4 | 60] 12 G4 MPSAO05 | 60 | 60] 100 60 50; | 100; 7 | 0.26] 100) 10 ;100 | G4 ZTX650 60 | 45 | 100 45] 100} 300] 500; 2 | 0.5 | 2000; 200 |140 | G17 ZTX450 60 | 45 | 100 45 | 100] 300) 150] 10 | 0.25) 150; 15 |150 | 15 G4 BFY51 60 | 30] 500 60) 40] | 150] 10 |0.15; 10) 1 | 50] 12 G4 BC337A | 50 | 45] 100* 45 | 100] 250/ 100] 1 | 0.7 | 500) 50 |100 | 12 G4 BC337B 50 | 45 | 100* 45 | 160] 400; 100;} 1 | 0.7 | 500} 50 |100 | 12 G4 BC337C 50 | 45 | 100* 45 | 250] 630; 100; 1 | 0.7 | 500} 50 |100 | 12 G4 BFY52 40 | 20} 500 40 60} } 150] 10 |}0.15; 10; 1) 50] 12 G4 BC338A | 30 | 25! 100* 25 | 100] 250/ 100| 1 | 0.7 | 500} 50 |1008| 128 G4 BC338B 30 | 25 | 100* 25 | 160} 400} 100} 1 | 0.7 | 500} 50 | 1008) 128 G4 BC338C | 30 | 25 | 100* 25 | 250] 630; 100} 1 | 0.7 | 500} 50 ;1008! 128 G4 P.N.P. MEDIUM POWER Vepo| Vceo} Icao | < hee > Vcetsat) fr | Cobo Dice Type Min. | Min.| Max. at Ve le | Vce Ic lg |Min. {Max. Geometry Vv Vi] nA V | Min.|]Max.| mA | V |Max.) mA | mA |MHz; pF ZTX753 {120 |100 | 100 100 | 100| 300] 500] 2 | 0.5 | 2000}200 ;100 | G16 ZTX752_ | 100 | 80] 100 80] 100] 300) 500) 2 | 0.5 | 2000}200 |100 | G16 ZTX552. -|100 | 80] 100 80] 40] 150] 150] 10 | 0.7 | 150} 15 |150 | 25 G6 MPSA56 | 80 | 80 | 100 80 50; | 100 1 | 0.25] 100] 10 |100 G6 ZTX751 80 | 60] 100 60} 100) 300; 500; 2 | 0.5 | 2000}200 {100 | G16 ZTX551 80 | 60] 100 60{ 50] 150} 150/ 10 | 0.35] 150; 15 1150 | 25 G6 MPSA55 | 60 | 60 | 100 60] 50] | 100] 1 | 0.25) 100} 10 |100 | G6 ZTX750 60 | 45 | 100 45 | 100} 300] 500; 2 |0.5 |2000/200 {100 | G16 ZTX550 60 | 45 | 100 45] 100/ 300} 150; 10 | 0.25) 150) 15 {150 | 25 G6 BC327A 50 | 45 | 100* 45 | 100] 250} 100; 1 | 0.7 | 500) 50 {1008| 128 G6 BC327B 50 | 45 | 100* 45 | 160] 400} 100; 1 | 0.7 | 500) 50 /1008| 128 G6 BC327C 50 | 45 | 100* 45 | 250] 630/ 100; 1 {0.7 | 500) 50 |1008; 128 G6 BC328A 30 | 25 | 100* 25 | 100] 250] 100} 1 | 0.7 | 500) 50 |1008} 128 G6 BC328B 30 | 25 | 100* 25 | 160} 400| 100] 1 | 0.7 | 500] 50 11008] 128 G6 BC328C | 30 | 25 | 100* 25 | 250] 630] 100} 1 | 0.7 ; 500} 50 |1008| 128 G6 Vceisat), fr and Cop. are parameters which are assembly dependent and figures quoted are those typically achieved on Ferranti assembly lines. "Ices at Vces ss 8 Typical SD11