PMEG2020AEA,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet 2004 Feb 26

DISCRETE SEMICONDUCTORS

PMEG2020AEA

20 V, 2 A very low VF MEGA

Schottky barrier rectifier in SOD323

(SC-76) package

handbook, halfpage

M3D049

2004 Feb 26 2

NXP Semiconductors Product data sheet

20 V, 2 A very low VF MEGA Schottky

barrier rectifier in SOD323 (SC-76) p ackage PMEG2020AEA

FEATURES

•Forward current: 2 A

•Reverse voltage: 20 V

•Very low forward voltage

•Very small SMD package.

APPLICATIONS

•Low voltage rectification

•High efficiency DC/ DC conv ersion

•Switch mode power supply

•Inverse polarity protection

•Low power cons ump tion applications.

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier rectifier with an integrated guard ring for

stress protection, encapsulated in a SOD323 (SC-76) very

small SMD plastic package.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE

PMEG2020AEA S3

SYMBOL PARAMETER VALUE UNIT

IFforward cu rrent 2 A

VRreverse vo ltage 20 V

PIN DESCRIPTION

1cathode

2anode

MHC682

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

The marking bar indicates the cathode.

RELATED PRODUCTS

ORDERING INFORMATION

TYPE NUMBER DESCRIPTION FEATURES

PMEG1020EA 2 A; 10 V ultra low VF MEGA Schottky barrier

rectifier SOD323 package; lower reverse voltage; lower

forward voltage

PMEG2010EA 1 A; 20 V ultra low VF MEGA Schottky barrier

rectifier SOD323 package; lo we r forward cu rrent; lower

reverse current and diode capacit a nce

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PMEG2020AEA −plastic surface mounted package; 2 leads SOD323

2004 Feb 26 3  
NXP Semiconductors Pr oduct data  shee t
20 V, 2 A very low VF MEGA Schottky 
barrier rectifier in SOD323 (SC-76) package PMEG2020AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL CHARACTE RISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses 
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and 
IF (AV) rating will be available on reque st.
3. Device mounted o n a on an FR4 printed-circ uit board with copper c l ad 10 x 10 mm.
4. Soldering point of cathode tab.
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous revers e voltage −20 V
IFcontinuous forward current Tsp ≤ 55 °C−2 A
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 −7 A
IFSM non-repetitive peak forward current t = 8 ms square wave −9 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature  −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient notes 1 and 2 450 K/W
Rth(j-a) thermal resistance from junction to ambient notes 2 and 3 210 K/W
Rth(j-s) thermal resistance from junction to solder point note 4 90 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage see Fig.2 ;  no te  1
IF = 0.01 A 200 220 mV
IF =  0.1 A 265 290 mV
IF = 1 A 380 430 mV
IF = 2 A 450 525 mV
IRreverse current VR = 5 V; see Fig.3 15 50 μA
VR = 10 V 20 80 μA
VR = 20 V 50 200 μA
Cddiode capacitan c e  VR = 5 V; f = 1 MHz; see Fig.4 55 70 pF

2004 Feb 26 4

NXP Semiconductors Pr oduct data shee t

20 V, 2 A very low VF MEGA Schottky

barrier rectifier in SOD323 (SC-76) package PMEG2020AEA

GRAPHICAL DATA

handbook, halfpage

0.50

(3)

0.1 0.2 0.3 0.4

104

103

102

10−1

MDB823

(mA)

VF (V)

(1) (2) (4)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

(4) Tamb = −40 °C.

handbook, halfpage

20105015

MDB825

10−1

10−3

10−4

10−5

102

(mA)

VR (V)

10−2

(1)

(2)

(3)

(4)

Fig.3 Reverse current as a fun ction of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

(4) Tamb = −40 °C.

handbook, halfpage

0 5 10 20

200

150

100

MDB824

(pF)

VR (V)

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb = 25 °C.

2004 Feb 26 5

NXP Semiconductors Pr oduct data shee t

20 V, 2 A very low VF MEGA Schottky

barrier rectifier in SOD323 (SC-76) package PMEG2020AEA

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOD323 SC-76

SOD32

03-12-17

06-03-16

Note

1. The marking bar indicates the cathode

UNIT A

mm 0.05

1.1

0.8 0.40

0.25 0.25

0.10 1.8

1.6 1.35

1.15 2.7

2.3 0.45

0.15

max

DIMENSIONS (mm are the original dimensions)

lastic surface-mounted package; 2 leads

(1)

2 mm

scale

bpc D E HDQ

0.25

0.15

Lpv

0.2

detail X

A1c

HDvA

2004 Feb 26 6

NXP Semiconductors Pr oduct data shee t

20 V, 2 A very low VF MEGA Schottky

barrier rectifier in SOD323 (SC-76) package PMEG2020AEA

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or completing a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

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warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/01/pp7 Date of release: 2004 Feb 26 Document orde r number: 9397 750 11976