Type 2N5416S
Geometry TBD
Polarity PNP
Qual Level: Pending
Data Sheet No. 2N5416S
Generic Part Number:
2N5416S
REF: MIL-PRF-19500/485
Features:
• General-purpose low power ampli-
fier transistor which operates over
a wide temperature range.
• Housed in TO-39 case.
• Also it will be available in chip
form using the TBD chip geome-
try.
• The Min and Max limits shown are
per MIL-PRF-19500/485 which
Rating Symbol Rating Unit
Collector-Emitter voltage VCEO 300 V
Collector-Base Voltage VCBO 350 V
Emitter-Base voltage VEBO 6.0 V
Collector Current, Continuous IC1.0 A
Power, TA = +25oCPT0.75 Watt
Power, TC = +25oCPT10 Watt
Thermal Resistance RJC 17.5 oC/W
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
T
C
= 25oC unless otherwise specified
TO-39
Data Sheet No. 2N5416S
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
IC = 50 mA, IB = 5 mA, L = 25 mH, f = 30-60 Hz
Collector-Base Cutoff Current
VCB = 280 V ICBO1 --- 50 µA
VCB = 350 V ICBO2 --- 500 µA
VCB = 280 V, TA = +150
o
CICBO3 --- 1mA
Emitter-Base Cutoff Current
VEB = 6 V
Collector-Emitter Cutoff Current
VCE = 250 V ICEO1 --- 50 µA
VCE = 300 V ICEO2 --- 1mA
Collector-Emitter Cutoff Current
VCE = 300 V, VBE = 1.5 V
nA
IEBO --- 20
Electrical Characteristics
TC = 25oC unless otherwise specified
V(BR)CEO 200 --- V
ICEX --- 50 µA
ON Characteristics
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, pulsed hFE1 30 120 ---
IC = 1.0 mA, VCE = 1.0 V, pulsed hFE2 15 --- ---
IC = 10 mA, VCE = 10 V, TA = -55
o
C, pulsed
hFE3 15 --- ---
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5 mA, pulsed
Base-Emitter Saturation Voltage
VCE = 10 V, IC = 50 mA, pulsed VBE --- 1.5 V dc
VCE(sat) --- 2.0 V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 5 MHz
Short-Circuit, Forward Current Transfer Ratio
VCE = 10 V, IC = 5 mA, f = < 1 kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 5 V, IC = 0, 100 kHz < f < 1 MHz
---
hFE 55 ---
|hFE|3.0 15 ---
COBO --- 15 pF
CIBO --- 75 pF
Pulse Response
Min
Max
Unit
Turn on Time
VCC = 200 V, IC = 50 mA, IB1 = 5 mA
Turn off Time
VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA toff --- 10 µs
ton --- 1.0 µs
Data Sheet No. 2N5416S
Maximum Ratings