BCY59 (R) SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The BCY59 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is intented for use in audio input stages, driver stages and low-noise input stages. The PNP complementary type Is BCY79. ) s ( ct u d o let r P e o s b O ) s ( t c TO-18 INTERNAL SCHEMATIC DIAGRAM u d o r P e t e l o s b O ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) Parameter 45 V V CEO Collector-Emitter Voltage (I B = 0) 45 V V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB Base Current P tot T stg Tj Total Dissipation at T amb 25 o C at T C 25 o C Storage Temperature Max. Operating Junction Temperature September 2002 7 V 200 mA 50 mA 0.39 1 W W -55 to 175 o C 175 o C 1/6 BCY59 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 150 384.6 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 45 V V CE = 45 V T C = 150 o C I CEX Collector Cut-off Current (V BE = -0.2 V) V CE = 45 V T C = 100 o C I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) I C = 2 mA 45 Pr Emitter-Base Breakdown Voltage (I C = 0) I E = 10 A V CE(sat) Collector-Emitter Saturation Voltage I C = 10 mA I C = 100 mA I B = 0.25 mA I B = 2.5 mA V BE(sat) Base-Emitter Saturation Voltage I C = 10 mA I C = 100 mA I B = 0.25 mA I B = 2.5 mA V BE(on) Base-Emitter (on) Voltage I C = 2 mA I C = 100 mA h FE DC Current Gain I C = 10 A Gr. VIII Gr. IX Gr. X I C = 2 mA Gr. VIII Gr. IX Gr. X I C = 10 mA Gr. VIII Gr. IX Gr. X I C = 100 mA Gr. VIII Gr. IX Gr. X r P e t e l o s b O hfe fT Small Signal Current Gain I C = 2 mA Gr. VIII Gr. IX Gr. X Transition Frequency I C = 10 mA Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/6 7 e t e l so ) (s t c u Typ. Max. Unit 0.1 0.1 10 10 nA A 20 A ) s ( ct 10 V (BR)EBO od Min. b O V CE = 5 V V CE = 1 V nA V u d o V 0.12 0.4 0.35 0.7 V V 0.6 0.75 0.7 0.9 0.85 1.2 V V 0.55 0.65 0.75 0.7 V V 20 40 100 140 195 280 180 250 380 250 350 500 120 160 240 260 365 520 V CE = 5 V V CE = 5 V 310 460 630 V CE = 1 V V CE = 1 V 45 60 60 V CE = 5 V f = 1 KHz 175 250 350 V CE = 5 V f = 100 MHz 350 500 700 200 MHz BCY59 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit C CBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1MHz 3.5 6 pF C EBO Emitter-Base Capacitance IC = 0 V EB = 0.5 V f = 1MHz 11 15 pF NF Noise Figure I C = 0.2 mA V CE = 5 V f = 1KHz R g = 2K f = 200Hz 2 6 dB t on Turn-on Time I C = 10 mA V CC = 10 V I B1 = 1 mA I C = 100 mA V CC = 10 V I B1 = 10 mA 85 150 ns 55 ) s ( ct t off Turn-off Time I C = 10 mA V CC = 10 V I B1 = - I B2 = 1 mA I C = 100 mA V CC = 10 V I B1 = - I B2 = 10 mA 480 u d o 480 150 ns 800 ns 800 ns r P e t e l o ) (s s b O t c u d o r P e s b O t e l o DC Current Gain Collector-Emitter Saturation Voltage 3/6 BCY59 Transition Frequeny Collector-Base Capacitance ) s ( ct u d o r P e Noise Figure (f = 100 Hz) Noise Figure (f = 1 KHz) t e l o ) (s s b O t c u d o r P e t e l o s b O Noise Figure (f = 10 KHz) 4/6 Noise Figure vs. Frequency BCY59 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 0.500 B 0.49 D 5.3 E 4.9 F 5.8 G 0.019 ) s ( ct 0.208 du e t e ol 2.54 0.100 H 1.2 I 1.16 )- 45o L MAX. s ( t c s b O 0.193 o r P 0.228 0.047 0.045 45o u d o r P e t e l o s b O D G A I E F H B L C 0016043 5/6 BCY59 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6