BCY59
SMALL SIGNAL NPN TRAN SISTOR
DESCRIPTION
The BCY59 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-18 metal case. It is
intented for use in audio input stages, driver
stages and low-noise input stages.
Th e PNP com plementar y type Is BCY79.
®
INTERNAL SCHEMATIC DIAG RAM
September 2002
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 45 V
VCEO Collector-Emitter Voltage (IB = 0) 45 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
ICCollector Current 200 mA
IBBase Current 50 mA
Ptot Total Dissipation at Tamb ≤ 25 oC
at TC ≤ 25 oC0.39
1W
W
Tstg Storage Temperature -55 to 175 oC
TjMax. Operating Junction Temperature 175 oC
TO-18
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 150
384.6
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 45 V
VCE = 45 V TC = 150 oC0.1
0.1 10
10 nA
µA
ICEX Collector Cut-off
Current (VBE = -0.2 V) VCE = 45 V TC = 100 oC20µA
I
EBO Emitter Cut-off C urrent
(IC = 0) VEB = 5 V 10 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 2 mA 45 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 µA7V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC = 10 mA IB = 0.25 mA
IC = 100 mA IB = 2.5 mA 0.12
0.4 0.35
0.7 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 10 mA IB = 0.25 mA
IC = 100 mA IB = 2.5 mA 0.6
0.75 0.7
0.9 0.85
1.2 V
V
VBE(on)∗Base-Emitter (on)
Voltage IC = 2 mA VCE = 5 V
IC = 100 mA VCE = 1 V 0.55 0.65
0.75 0.7 V
V
hFE∗DC Current Gain IC = 10 µA VCE = 5 V
Gr. VIII
Gr. IX
Gr. X
IC = 2 mA VCE = 5 V
Gr. VIII
Gr. IX
Gr. X
IC = 10 mA VCE = 1 V
Gr. VIII
Gr. IX
Gr. X
IC = 100 mA VCE = 1 V
Gr. VIII
Gr. IX
Gr. X
20
40
100
180
250
380
120
160
240
45
60
60
140
195
280
250
350
500
260
365
520
310
460
630
hfe∗Small Signal Current
Gain IC = 2 mA VCE = 5 V f = 1 KHz
Gr. VIII
Gr. IX
Gr. X
175
250
350
350
500
700
fTTransition Frequency IC = 10 mA VCE = 5 V f = 100 MHz 200 MHz
∗ P ulsed: P ulse duration = 300 µs, d uty cy cle ≤ 1 %
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ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
CCBO Collector-Base
Capacitance IE = 0 VCB = 10 V f = 1MHz 3.5 6 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = 0.5 V f = 1MHz 11 15 pF
NF Noise Figure IC = 0.2 mA VCE = 5 V
f = 1KHz Rg = 2KΩ ∆f = 200Hz 26dB
t
on Turn-on Time IC = 10 mA VCC = 10 V
IB1 = 1 mA
IC = 100 mA VCC = 10 V
IB1 = 10 mA
85
55
150
150
ns
ns
toff Turn-off Time IC = 10 mA VCC = 10 V
IB1 = - IB2 = 1 mA
IC = 100 mA VCC = 10 V
IB1 = - IB2 = 10 mA
480
480
800
800
ns
ns
DC Current Gain Collector-Em itter Saturation Voltage
BCY59
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Tr ansition Frequeny
N oise Figure (f = 100 Hz)
N oise Figure (f = 10 KHz)
Collector-Base Capacitance
Noise Figure (f = 1 KHz)
Noise Figure vs. Frequency
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E4.9 0.193
F 5.8 0.228
G 2.54 0.100
H1.2 0.047
I 1.16 0.045
L45
o
45
o
L
G
I
D A
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
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subject to change without notice. This publication supersedes and replaces all information previously supplie d. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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BCY59
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