DATA SH EET
Product specification May 1994
DISCRETE SEMICONDUCTORS
BFT92W
PNP 4 GHz wideband transistor
May 1994 2
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) pac k age.
APPLICATION
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT92W uses the same crystal as the
SOT23 version, BFT92.
PINNING
PIN DESCRIPTION
1base
2emitter
3collector
Marking code: W1.
Fig.1 SOT323.
handbook, 2 columns 3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
ICcollector current (DC) 35 mA
Ptot total power dissipation up to Ts=93C; note 1 300 mW
hFE DC current gain IC=15 mA; VCE =10 V 20 50
Cre feedback capacitance IC=0; V
CB =10 V; f = 1 MHz 0.5 pF
fTtransition frequency IC=15 mA; VCE =10 V;
f = 500 MHz 4GHz
GUM maximum unilateral power gain IC=15 mA; VCE =10 V;
f = 500 MHz; Tamb =25C17 dB
F noise figure IC=5mA; V
CE =10 V;
f = 500 MHz 2.5 dB
Tjjunction temperature 150 C
May 1994 3
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating S ystem (IEC 134).
THERMAL CHARACTE RISTI CS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the sold ering point of the collector pin.
CHARACTERISTICS
Tj=25C (unless otherwise specified).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2V
ICcollector current (DC) 25 mA
Ptot total power dissipation up to Ts=93C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts=93C; note 1 190 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE=0; V
CB =10 V 50 nA
hFE DC current gain IC=15 mA; VCE =10 V 20 50
fTtransition frequenc y IC=15 mA; VCE =10 V;
f=500MHz; T
amb =25C4GHz
Cccollector capacitance IE=i
e=0; V
CB =10 V;
f=1MHz 0.65 pF
Ceemitter capacita nce IC=i
c=0; V
EB =0.5 V;
f=1MHz 0.75 pF
Cre feedback ca pacitance IC=0; V
CB =10 V;
f=1MHz 0.5 pF
GUM maximum unilateral power gain;
note 1 IC=15 mA; VCE =10 V;
f=500MHz; T
amb =25C17 dB
IC=15 mA; VCE =10 V;
f=1GHz; T
amb =25C11 dB
F noise figure s=opt; IC=5mA;
VCE =10 V; f = 500 MHz 2.5 dB
s=opt; IC=5mA;
VCE =10 V; f = 1 GHz 3dB
GUM 10 s21 2
1s
11 2
–1s
22 2
–
-------------------------------------------------------- dB.log=
May 1994 4
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
Fig.2 Power derating curve.
0 50 100 200
200
0
MLB540
150T ( C)
o
s
Ptot
(mW)
300
400
100
Fig.3 DC current gain as a function of collector
current, typical values.
VCE =10 V; Tj=25C.
0
60
40
20
010 20
MLB541
30
I (mA)
C
FE
h
Fig.4 Feedback capacitance as a function of
collector-base voltag e, typical values.
IC=0; f=1MHz.
0
1
020
MLB542
48 V (V)
CB
Cre
(pF)
0.8
0.6
0.4
0.2
12 16
Fig.5 Transition frequency as a func tion of
collector current, typical values.
f=500MHz; T
amb =25C.
4
2
0
MLB543
6
f
(GHz)
102
101
T
I (mA)
C
V =
CE
10 V
5 V
May 1994 5
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
Fig.6 Gain as a function of collector current,
typical values.
f=500MHz; V
CE =10 V.
MSG = maximum stable gain.
0
30
20
10
010 20
MLB544
30
gain
(dB)
I (mA)
C
GUM
MSG
Fig.7 Gain as a fun ction of collec tor current,
typical values.
f=1GHz; V
CE =10 V.
MSG = maximum stable gain.
0
30
20
10
010 20
MLB545
30
gain
(dB)
I (mA)
C
MSG
GUM
Fig.8 Gain as a function of fr equency,
typical values.
IC=5mA; V
CE =10 V.
MSG = maximum stable gain.
50
010
MLB546
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
Fig.9 Gain as a function of fr equency,
typical values.
IC=15 mA; VCE =10 V.
MSG = maximum stable gain.
50
010
MLB547
102103104
10
20
30
40
gain
(dB)
f (MHz)
GUM
MSG
Gmax
May 1994 6
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
VCE =10 V; IC=15 mA.
Fig.10 Common emitter input reflection coefficient (s11), typical values.
MLB548
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 1 2 5
3 GHz
40 MHz
0.5
VCE =10 V; IC=15 mA.
Fig.11 Common emitter forward transmission coefficient (s21), typical values.
MLB549
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz 3 GHz
May 1994 7
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
VCE =10 V; IC=15 mA.
Fig.12 Common emitter reverse transmission coefficient (s12), typical values.
MLB550
0o
90o
135o
180o
90o
0.5 0.4 0.3 0.2 0.1
45o
135o45o
40 MHz
3 GHz
Fig.13 Common emitter output reflection coefficient (s22), typical values.
VCE =10 V; IC=15 mA.
MLB551
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
40 MHz
3 GHz
May 1994 8
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
Fig.14 Minimum noise figure as a function of
collector cu rrent, typical values.
VCE =10 V.
handbook, halfpage
2
4
2
010
MLB552
101
6
F
(dB)
I (mA)
C
1 GHz
500 MHz
Fig.15 Minimum noise figure as a function of
frequency, typi ca l valu es.
VCE =10 V.
handbook, halfpage
4
2
0
MLB553
6
F
(dB)
f (MHz) 104
103
102
I =
15 mA
10 mA
5 mA
2 mA
C
May 1994 9
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
Fig.16 Common emitter noise figure circles, typica l values.
f=500MHz; V
CE =10 V; IC=5mA; Z
o=50.
MLB554
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
1 2 5
F = 3 dB
F = 4 dB
F = 5 dB
0.2 0.5
min
F = 2.5 dB
opt
Γ
Fig.17 Common emitter noise figure circles, typica l values.
f=1GHz; V
CE =10 V; IC=5mA; Z
o=50.
MLB555
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
1F = 3.5 dB
F = 4 dB
F = 5 dB
0.2
min
opt
Γ
F = 3 dB
2 50.5
May 1994 10
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
SPICE parameters for the BFT92W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 437.5 aA
2 BF 33.58
3NF1.009
4VAF23.39V
5IKF99.53mA
6ISE87.05fA
7NE1.943
8BR4.947
9NR1.002
10 VAR 3.903 V
11 IKR 5.281 mA
12 ISC 35.88 fA
13 NC 1.393
14 RB 5.000
15 IRB 1.000 A
16 RBM 5.000
17 RE 1.000
18 RC 10.00
19(1) XTB 0.000
20(1) EG 1.110 eV
21(1) XTI 3.000
22 CJE 746.6 fF
23 VJE 600.0 mV
24 MJE 0.357
25 TF 17.49 ps
26 XTF 1.354
27 VTF 155.6 mV
28 ITF 1.000 mA
29 PTF 45.00 deg
30 CJC 937.1 fF
31 VJC 396.4 mV
32 MJC 0.200
33 XCJC 0.106
34 TR 8.422 ns
35(1) CJS 0.000 F
Note
1. These parameters have not been extr a cted, the
default values are shown.
List of components (see Fig.18)
36(1) VJS 750.0 mV
37(1) MJS 0.000
38 FC 0.768
DESIGNATION VALUE UNIT
Cbe 2fF
Ccb 100 fF
Cce 100 fF
L1 0.34 nH
L2 0.10 nH
L3 0.34 nH
LB0.60 nH
LE0.60 nH
SEQUENCE No. PARAMETER VALUE UNIT
QLB= 50; QLE= 50; QLB,E(f) = QLB,E(f/fc);
fc= scaling frequency = 1 GHz.
Fig.18 Package equivalent circuit SOT323.
handbook, halfpage
MBC964
B
E
CB' C'
E'
LB
LE
L3
L1 L2
Ccb
Cbe ce
C
May 1994 11
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
PACKAGE OUTLINE
May 1994 12
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
DATA SHEET STATUS
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
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development.
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Product data sheet Production This document contains the pr oduct specification.
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May 1994 13
NXP Semiconductors Product specification
PNP 4 GHz wideband transistor BFT92W
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values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
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Characteristics sections of this document is not warranted.
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Printed in The Netherlands R77/01/pp14 Date of release: May 1994