©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJE170/171/172
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : MJE170
: MJE171
: MJE172
- 60
- 80
- 100
V
V
V
VCEO Collector-Emitter Voltage : MJE170
: MJE171
: MJE172
- 40
- 60
- 80
V
V
V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current (DC) - 3 A
ICP Collector Current (Pulse) - 6 A
IB Base Current - 1 A
PC Collector Dissipation (TC=25°C) 12.5 W
Collector Dissipation (Ta=25°C) 1.5 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parame ter Test Condition Min. Max. Uni ts
BVCEO Collector-Emitter Breaksown Voltage
: MJE170
: MJE171
: MJE172
IC = 10mA, IB = 0
-40
-60
-80
V
V
V
ICBO
Collector Cut-off Current : MJE170
: MJE171
: MJE172
: MJE170
: MJE171
: MJE172
VCB = - 60V, IB = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
VCB = - 60V, IE = 0, @TC = 150°C
VCB = - 80V, IE = 0, @TC = 150°C
VCB = - 100V, IE = 0, @TC = 150°C
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
µA
µA
µA
mA
mA
mA
IEBO Emitt e r Cut- o ff Curre n t VBE = - 7V, IC = 0 -0.1 µA
hFE DC Current Gain VCE = - 1V, IC = - 100mA
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 1.5A
50
30
12
250
VCE(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA
IC = - 1.5A, IB = - 150mA
IC = - 3A, IB = - 600mA
-0.3
-0.9
-1.7
V
V
V
VBE(sat) Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 150mA
IC = - 3A, IB = - 600mA -1.5
-2.0 V
V
VBE(on) Base-Emitter ON Voltage VCE = - 1V, IC = - 500mA -1.2 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA 50 MHz
Cob Output Capacitance VCB = - 10V, IE = 0, f = 0.1MHz 50 pF
MJE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJE170/171/172
Typical Charactristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
-0.1 -1
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10 -100
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
IC/IB=10 IC/IB=5
VBE@VCE= -1V
VCE(sat)
VBE(sat) IC/IB=10
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
1
10
100
1000
f=0.1MHZ
IE=0
Cob[pF], CAPACITANC E
VCB[V], COLLECTOR-BASE VO LTAGE
-0.01 -0.1 -1 -10
1
10
100
1000
tR
tD
tD,tR[ns], TURN ON TIME
IC[A], COLLECTOR CURRENT
-0.1 -1
10
100
1000
tF
tSTG
tF,tSTG[ns], TURN OFF TIME
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.01
-0.1
-1
-10
MJE170
MJE171
MJE172
VCEMAX.
500µs
50ms
100µs
DC
IC[A], COLLECTOR CURRENT
VCE[V], CO L LECT OR-EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
MJE170/171/172
Rev. A2, June 2001
Typical Characteristics (Continued)
Figure 7. DC current Gain
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
PC[W], POWER DIS SIPATION
Tc[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
MJE170/171/172
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary F irst Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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STAR*POWE R is used under license
