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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQA24N60 N-Channel QFET(R) MOSFET 600 V, 23.5 A, 240 m Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 23.5 A, 600 V, RDS(on) = 240 m (Max.) @ VGS = 10 V, ID = 11.8 A * Low Gate Charge (Typ. 110 nC) * Low Crss (Typ. 56 pF) * 100% Avalanche Tested D G G D TO-3PN S Absolute Maximum Ratings T Symbol VDSS ID S o C = 25 C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) FQA24N60 Unit 600 V 23.5 A 14.9 A (Note 1) 94 A IDM Drain Current VGSS Gate-Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1300 mJ - Pulsed IAR Avalanche Current (Note 1) 23.5 A EAR Repetitive Avalanche Energy (Note 1) 31 mJ dv/dt PD Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 3) 4.5 310 2.5 -55 to +150 Vns W W/C C 300 C TJ, TSTG TL - Derate above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds Thermal Characteristics Parameter Symbol RJC Thermal Resistance, Junction-to-Case, Max. RCS Thermal Resistance, Case-to-Sink, Typ. RJA Thermal Resistance, Junction-to-Ambient, Max. (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 1 FQA24N60 Unit 0.4 0.24 CW CW 40 CW www.fairchildsemi.com FQA24N60 -- N-Channel QFET(R) MOSFET June 2014 Part Number FQA24N60 Electrical Characteristics T Symbol Package TO-3PN Top Mark FQA24N60 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units o C = 25 C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.6 VDS = 600 V, VGS = 0 V -- -- 10 A VDS = 480 V, TC = 125C -- -- 100 A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 11.8 A -- 0.18 0.24 gFS Forward Transconductance VDS = 50 V, ID = 11.8 A -- 22.5 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4200 5500 pF -- 550 720 pF -- 56 75 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 23.5 A, RG = 25 (Note 4) VDS = 480 V, ID = 23.5 A, VGS = 10 V (Note 4) -- 90 190 ns -- 270 550 ns -- 200 410 ns -- 170 350 ns -- 110 145 nC -- 25 -- nC -- 53 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 23.5 A ISM -- -- 94 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 23.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 470 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 23.5 A, dIF / dt = 100 A/s -- 6.2 -- C 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 4.3 mH, IAS = 23.5 A, VDD = 50 V, RG = 25 , starting TJ = 25oC. 3. ISD 23.5 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 2 www.fairchildsemi.com FQA24N60 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 150 1 10 ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 25 0 10 0 10 -55 Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 50V 2. 250s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.0 VGS = 10V 0.6 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 0.8 1 10 VGS = 20V 0.4 0 10 0.2 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 0.0 0 10 20 30 40 50 60 70 80 90 -1 10 100 ID, Drain Current [A] 0.2 1.2 1.4 Coss 4000 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VDS = 120V 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 1.0 12 Ciss 2000 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 0.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8000 0.4 VDS = 300V VDS = 480V 8 6 4 2 Note : ID = 23.5 A 0 -1 10 0 0 10 1 10 Figure 5. Capacitance Characteristics (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 0 20 40 60 80 100 120 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQA24N60 -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 11.8 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 24 Operation in This Area is Limited by R DS(on) 20 2 10 s 100 s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 1 10 DC 0 10 10 ms Notes : o 1. TC = 25 C -1 0 1 10 2 10 12 8 4 o 2. TJ = 150 C 3. Single Pulse 10 16 0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 -1 N o te s : 1 . Z J C ( t) = 0 .4 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 0 .0 1 -2 t1 s i n g l e p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t1 , Rectangular Puls e Duration [sec] Figure 11. Transient Thermal Response Curve (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 4 www.fairchildsemi.com FQA24N60 -- N-Channel QFET(R) MOSFET Typical Characteristics FQA24N60 -- N-Channel QFET(R) MOSFET 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 6 www.fairchildsemi.com FQA24N60 -- N-Channel QFET(R) MOSFET DUT FQA24N60 -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 (c)2000 Fairchild Semiconductor Corporation FQA24N60 Rev. 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