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FQA24N60
N-Channel QFET® MOSFET
600 V, 23.5 A, 240 mΩ
Description
FQA24N60 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
1
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
TO-3PN
GDS
G
S
D
•23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V,
ID = 11.8 A
•Low Gate Charge (Typ. 110 nC)
•Low Crss (Typ. 56 pF)
•100% Avalanche Tested
Thermal Characteristi cs
Symbol Parameter FQA24N60 Unit
VDSSDrain-Source Voltage 600 V
IDDrain Current 23.5 A
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) 14.9 A
IDM Drain Current - Pulsed (Note 1) 94 A
VGSSGate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1300 mJ
IAR Avalanche Current (Note 1) 23.5 A
EAR Repetitive Avalanche Energy (Note 1) 31 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5Vns
PDPower Dissipation (TC = 25°C) 310 W
- Derate above 25°C 2.5 W/°C
TJ, TSTGOperating and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temperature for Soldering,
1/8 from Case for 5 Seconds 300 °C
Symbol Parameter FQA24N60 Unit
RθJC Thermal Resistance, Junction-to-Case, Max. 0.4 °CW
RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °CW
RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °CW
June 2014
Package Marking and Ordering Information
Part Number Top Mark Package Reel Size Tape Width Quantity
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
2
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 4.3 mH, IAS = 23.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 23.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
Packing Method
FQA24N60 FQA24N60 TO-3PN N/A N/A 30 units
Tube
Electrical Characteristics TC = 25oC unless otherwise noted.
FQA24N60 — N-Channel QFET® MOSFET
(Note 4)
(Note 4)
Symbol Parame ter Test Conditions Min.Typ.Max.Unit
Off Characteristics
BVDSSDrain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA600 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C
IDSSZero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA
VDS = 480 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri stics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 11.8 A -- 0.18 0.24 Ω
gFS Forward Transconductance VDS = 50 V, ID = 11.8 A -- 22.5 -- S
Dynamic Characteristics
CissInput Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 4200 5500 pF
CossOutput Capacitance -- 550 720 pF
CrssReverse Transfer Capacitance -- 56 75 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 23.5 A,
RG = 25 Ω
-- 90 190 ns
trTurn-On Rise Time -- 270 550 ns
td(off) Turn-Off Delay Time -- 200 410 ns
tfTurn-Off Fall Time -- 170 350 ns
QgT
otal Gate Charge VDS = 480 V, ID = 23.5 A,
VGS = 10 V
-- 110 145 nC
Qgs Gate-Source Charge -- 25 -- nC
Qgd Gate-Drain Charge -- 53 -- nC
Drain-Sour ce Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 23.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 94 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23.5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 23.5 A,
dIF / dt = 100 A/µs
-- 470 -- ns
Qrr Reverse Recovery Charge -- 6.2 -- µC
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
3
Typical Characteristics
FQA24N60 — N-Channel QFET® MOSFET
020406080100120
0
2
4
6
8
10
12
VDS = 300V
VDS = 120V
VDS = 480V
Note : ID = 23.5 A
VGS , Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 0101
0
2000
4000
6000
8000
C
iss = Cgs + Cgd (Cds = shorted)
Cgd
ds
C
oss = C + Cgd
C
rss =
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
10
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-1
100
101
150
Notes :
1. VGS = 0V
2. 250
s Pulse Test
25
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 10 02 03 0540 06 07 8090100
0.0
0.2
0.4
0.6
0.8
1.0
VGS = 20V
VGS = 10V
Note : TJ = 25
RDS(ON) [],
Drain-Source On-Resistance
ID, Drain Current [A]
24 810
10-1
100
101150
25
-55
Notes :
1. VDS = 50V
2. 250
s Pulse Test
ID, Drain Current [A]
6
V
GS, Gate-Source Voltage [V]
10-1 0101
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
s Pulse Test
2. TC
= 25
ID, Drain Current [A]
10
VDS, Drain-Source Voltage [V]
Figure 5. C apacitance C haracteristi cs Figure 6. Ga te Charge Cha ra ct eri stics
Figu re 3. On-R esistance Variat ion vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage
Variat io n vs. Source Curre nt an d
Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character ist ic s
FQA24N60 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
4
Typical Characteristics (Continued)
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1 N o te s :
1 . Z JC(t) = 0.4 /W M ax.
2 . D u ty F a ctor, D = t1/t2
3 . T JM - T C P = DM * ZJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
25 50 75 100 125 150
0
4
8
12
16
20
24
ID, Drain Current [A]
TC, Case Temperature [
]
100101102103
10-1
100
101
102
10 µs
DC
10 ms
1 ms
100 µs
Operation in This Area
is Limited by R DS(on)
Notes :
1. TC
= 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. VGS = 10 V
2. ID
= 11.8 A
RDS(ON) , (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [o
C]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. VGS = 0 V
2. ID
= 250
A
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [o
C]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Br ea kdown Voltage Variation
vs. Temperature Figure 8. On-Resistanc e Va riation
vs. Temperature
Figure 11. Tr ans i ent Ther m al Res pons e Cur ve
t1
PDM
t2
ZθJC(t), Thermal Response [oC/W]
t1
, Rectangular Puls e Duration [sec]
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =L
I
AS2
----
2
1--------------------
BVDSS-V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =L
I
AS2
----
2
1
EAS =L
I
AS2
----
2
1
----
2
1--------------------
BVDSS-V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
5
FQA24N60 — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS •dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS •dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQA24N60 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
6
©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
7
FQA24N60 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2000 Fairchild Semiconductor Corporation
FQA24N60 Rev. C2
www.fairchildsemi.com
8
FQA24N60 — N-Channel QFET® MOSFET
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