PBU801–PBU807
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 1 (4)
8.0A Bridge Rectifier
Features
D
Diffused junction
D
Low forward voltage drop, high current
capability
D
Surge overload rating to 300A peak
D
Ideal for printed circuit board applications
D
Case to terminal isolation voltage 2500V
D
Plastic material – UL Recognition flammability
classification 94V–0
D
This series is UL listed under recognized
component index, file number E95060
14 408
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage PBU801 VRRM 50 V
g
=Working peak reverse voltage
DC Bl ki lt
PBU802
RRM
=VRWM
V
100 V
=DC Blocking voltage PBU803 =VR200 V
PBU804 400 V
PBU805 600 V
PBU806 800 V
PBU807 1000 V
Peak forward surge current IFSM 300 A
Average forward current TC=100
°
C IFAV 8 A
Junction and storage temperature range Tj=Tstg –65...+150
°
C
Electrical Characteristics
Tj = 25
_
CParameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=2A VF1 V
Reverse current TC=25
°
C IR10
m
A
TC=125
°
C IR1 mA
I2t Rating for fusing I2t 373 A2s
Thermal resistance junction to case mounted on heatsink RthJC 7.5 K/W
PBU801–PBU807
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-982 (4)
Characteristics (Tj = 25
_
C unless otherwise specified)
0
2
4
6
8
0 50 100 150
Heat Sink
15699 Tamb – Ambient Temperature ( °C )
I – Average Forward Current ( A )
FAV
Mounted on 4x4 inch
Copper PC Board
12.7mm lead length
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
0.1
1.0
10
100
0.6 0.8 1.0 1.2
IF Pulse Width = 300 µs
15700
I – Forward Current ( A )
F
VF – Forward Voltage ( V )
Tj = 25°C
Figure 2. Typ. Forward Current vs. Forward Voltage
0
50
100
150
200
250
300
1 10 100
I – Peak Forward Surge Current ( A )
FSM
Number of Cycles at 60 Hz
15701
Tj = 125°C
8.3 ms Single Half–Sine–W ave
JEDEC method
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
10
100
1000
1 10 100
0.1
Tj = 25°C
f = 1 MHz
C – Diode Capacitance ( pF )
D
VR – Reverse Voltage ( V )
15702
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
0.1
1.0
10
0 40 80 120
0.01
Percent of Rated Peak Reverse Voltage (%)
15703
Tj = 25°C
Tj = 100°C
I – Reverse Current ( A )
R
m
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
PBU801–PBU807
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-98 3 (4)
Dimensions in mm
14475
Case: molded plastic
Polarity: as marked on case
Approx. weight: 8.0 grams
Mounting position: any
Mounting: through hole for #6 screw
Mounting torque: 5.0 Inch–pounds maximum
Marking: type number
PBU801–PBU807
Vishay Lite–On Power Semiconductor
Rev . A2, 24-Jun-984 (4)
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
