DATA SH EET
Product specification
Supersedes data of 1997 Jul 04 1999 Apr 14
DISCRETE SEMICONDUCTORS
PZT3904
NPN switching transistor
handbook, halfpage
M3D087
1999 Apr 14 2
Philips Semiconductors Product specification
NPN switching transistor PZT3904
FEATURES
•Low current (max. 200 mA)
•Low voltage (max. 40 V).
APPLICATIONS
•High-speed saturated switching.
DESCRIPTION
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT3906.
PINNING
PIN DESCRIPTION
1 base
2, 4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −60 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-base voltage open collector −6V
I
Ccollector current (DC) −200 mA
ICM peak collector current −300 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.05 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 14 3
Philips Semiconductors Product specification
NPN switching transistor PZT3904
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 117 K/W
Rth j-s thermal resistance from junction to soldering point 36 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =30V −50 nA
IEBO emitter cut-off current IC= 0; VEB =6V −50 nA
hFE DC current gain VCE = 1 V; (see Fig.2)
IC= 0.1 mA 60 −
IC= 1 mA 80 −
IC= 10 mA 100 300
IC=50mA 60 −
I
C= 100 mA 30 −
VCEsat saturation voltage IC= 10 mA; IB=1mA −200 mV
IC= 50 mA; IB=5mA −200 mV
VBEsat saturation voltage IC= 10 mA; IB=1mA −850 mV
IC= 50 mA; IB=5mA −950 mV
Cccollector capacitance IE=i
e= 0; VCB =5V; f=1MHz −4pF
C
eemitter capacitance IC=i
c= 0; VEB = 500 mV; f = 1 MHz −8pF
f
Ttransition frequency IC= 10 mA; VCE = 20 V; f = 100 MHz 300 −MHz
F noise figure IC= 100 µA; VCE =5V; R
S=1kΩ;
f = 10 Hz to 15.7 kHz −5dB
Switching times (between 10% and 90% levels); (see Fig.3)
ton turn-on time ICon = 10 mA; IBon = 1 mA; IBoff =−1mA −65 ns
tddelay time −35 ns
trrise time −35 ns
toff turn-off time −240 ns
tsstorage time −200 ns
tffall time −50 ns
1999 Apr 14 4
Philips Semiconductors Product specification
NPN switching transistor PZT3904
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
80
160
hFE
40
120
MGD834
10−210−11IC (mA)
10 102103
VCE =1V.
V
i= 5 V; T = 500 µs; tp=10µs; tr=t
f≤3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB= 3.9 kΩ; RC= 270 Ω.
VBB =−1.9 V; VCC =3V.
Oscilloscope input impedance Zi=50Ω.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
Vi
VCC
Fig.3 Test circuit for switching times.
1999 Apr 14 5
Philips Semiconductors Product specification
NPN switching transistor PZT3904
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 96-11-11
97-02-28
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
1999 Apr 14 6
Philips Semiconductors Product specification
NPN switching transistor PZT3904
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 14 7
Philips Semiconductors Product specification
NPN switching transistor PZT3904
NOTES
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 14 Document order number: 9397 750 05639
