PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V 500 V 26 A 230 m 200 ns Maximum Ratings VGSS Continuos 30 V VGSM Transient 40 V ID25 TC = 25 C 26 A IDM TC = 25 C, pulse width limited by TJM 78 A IAR TC = 25 C 26 A EAR TC = 25 C 40 mJ EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 10 V/ns PD TC = 25 C 400 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247) FC Mounting force (PLUS220) Weight TO-247 PLUS220 & PLUS220SMD TO-247 (IXFH) D (TAB) PLUS220 (IXFV) G D D (TAB) S PLUS220SMD (IXFV_S) 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25 C, unless otherwise specified) 11..65/2.5..15 N/lb 6 5 g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 500 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % TJ = 125 C V 5.5 V 100 nA 25 250 A A 230 m G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Fast intrinsic diode l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Easy to mount l Space savings l High power density l DS99276E(12/05) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 26 S 3600 pF 370 pF Crss 40 pF td(on) 20 ns gfs VDS = 20 V; ID = 0.5 ID25, pulse test Ciss Coss 16 VGS = 0 V, VDS = 25 V, f = 1 MHz IXFV 26N50P IXFV 26N50PS TO-247 AD (IXFH) Outline 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG = 4 (External) 58 ns tf 20 ns Dim. Qg(on) 60 nC 20 nC A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 25 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31 C/W RthJC RthCS (TO-247, PLUS220) C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 104 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/s 200 ns QRM IRM VR = 100V, VGS = 0 V 0.6 6 Millimeter Min. Max. PLUS220 (IXFV) Outline C PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ Inches Min. Max. 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 26N50P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 60 26 V GS = 10V 8V 7V 24 22 50 45 I D - Amperes 18 I D - Amperes V GS = 10V 8V 55 20 16 14 12 6V 10 7V 40 35 30 25 20 8 6 15 4 10 2 6V 5 5V 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 15 18 21 24 27 30 Fig. 4. R DS(on) Normalized to ID = 13A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125C 26 3.1 V GS = 10V 7V 24 22 V GS = 10V 2.8 2.5 18 R DS(on) - Normalized 20 I D - Amperes 12 V DS - Volts V DS - Volts 6V 16 14 12 10 8 6 5V 2.2 I D = 26A 1.9 1.6 I D = 13A 1.3 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 13A Value v s. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 30 3.2 3 V GS = 10V 25 TJ = 125C 2.8 2.6 2.4 I D - Amperes R DS(on) - Normalized IXFV 26N50P IXFV 26N50PS 2.2 2 1.8 1.6 20 15 10 1.4 TJ = 25C 1.2 5 1 0.8 0 0 5 10 15 20 25 30 35 40 45 50 55 60 -50 -25 0 25 50 75 T J - Degrees Centigrade I D - Amperes (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 100 125 150 IXFH 26N50P Fig. 8. Transconductance 50 45 45 40 40 35 35 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 50 30 TJ = 125C 25C - 40C 25 IXFV 26N50P IXFV 26N50PS 20 TJ = - 40C 25C 125C 30 25 20 15 15 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 V GS - Volts 25 30 35 40 45 50 55 60 60 65 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 V DS = 250V 9 70 I D = 13A 8 I G = 10mA 60 I S - Amperes 7 V GS - Volts 50 40 30 TJ = 125C 6 5 4 3 20 2 10 TJ = 25C 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 V SD - Volts 15 20 25 30 35 40 45 50 55 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 f = 1 MHz Capacitance - PicoFarads RDS(on) Limit C iss 25s I D - Amperes 1,000 C oss 100s 10 1ms 100 10ms DC TJ = 150C C rss TC = 25C 10 1 0 5 10 15 20 25 30 35 40 10 100 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1000 IXFH 26N50P IXFV 26N50P IXFV 26N50PS Fig. 13. Maximum Transient Thermal Resistance R (th)JC - C / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 0.1 1 10