©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
August 2005
MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 140 V
VCBO Collector-Base Voltage 160 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector current - Continuous 600 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 140 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 160 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 100V, IE = 0
VCB = 100V, IE = 0, Ta = 100°C100
100 nA
µA
IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA
On Characteristics
hFE DC Current Gain IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
60
60
20 250
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 0.15
0.25 V
V
VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 1.0
1.2 V
V
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Marking: 1F
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MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
Electrical Characteristics Ta = 25°C unless otherwise noted
Thermal Characteristics Ta=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6 " × 1.6" × 0.06."
Package Marking and Ordering Information
Symbol Parameter Test Condition Min. Max. Units
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10mA, VCE = 10V,
f = 100MHz 50 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 6.0 pF
Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 30 pF
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Device Marking Device Package Reel Size Tape Width Quantity
1F MMBT5550 SOT-23 7” -- 3,000
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MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Voltaget
0.1 1 10 100
0
50
100
150
200
250
5020
52
0.5
0.2
-40
o
C
25
o
C
125
o
C
V
CE
= 5V
h
FE
- TYPI
C
AL PUL
S
ED
C
URRENT
G
AIN
I
C
- COLLECTOR CURRENT (mA)
110100
0.0
0.1
0.2
0.3
0.4
0.5
- 40
o
C
25
o
C
125
o
C
β = 10
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
110100
0.0
0.2
0.4
0.6
0.8
1.0
200
125 oC
25 oC
- 40 oC
β = 10
V
BESAT
- BASE EMITTER VOLTAGE (V)
I
C
- COLLECTOR CURRENT (mA)
0.1 1 10 100
0.0
0.2
0.4
0.6
0.8
1.0
- 40
o
C
25
o
C
125
o
C
V
CE
= 5V
V
BEON
- BASE EMITTE R ON VOL T A G E (V )
I
C
- COLLECTOR CURRENT (mA)
25 50 75 100 12
5
1
10
50
T - AMB IENT TEMPERATURE ( C)
I - C OLLECTOR CU RR EN T (nA)
A
CBO
°
V = 100V
CB
0.1 1 10 100
0
5
10
15
20
25
30
V - CO LLECTOR VOLTAGE (V)
CAPA CI TANCE (pF)
C
f = 1 .0 MHz
CE
C
cb
ib
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MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
Typical Performance Characteristics (Continued)
Figure 7. Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
100
200
300
400
500
PD-POWER DISSPATION (mW)
TEMPERATURE(0C)
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MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
Mechanical Dimensions
SOT-23
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use pr ovided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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