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Page <1> V1.123/01/13
Bipolar Transistor
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings:
Parameters Symbol Unit
Collector Emitter Voltage Vceo
100V
Collector-Base Voltage Vcbo
Emitter-Base Voltage Vebo 5V
Collector Current Ic8A
Collector Peak Current Icm 16A
Base Current Ib120mA
Total Power Dissipation upto TC = 25°C
Derate above 25°C Ptot
75W
0.6W/°C
Total Power Dissipation upto T = 25°C
Derate above 25°C
2.2W
0.0175W/°C
Operating Junction Temperature Range Tj-65° to +150°C
Storage Temperature Range Tstg -65° to +150°C
Thermal Resistance, Junction-to-Case Rth (j-c) 1.67°C/W
Thermal Resistance, Junction-to-Ambient Rth (j-a) 57°C/W
Features:
• High DC Current Gain
• Collector-Emitter Sustaining Voltage: V = 100V Min
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
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Page <2> V1.123/01/13
Bipolar Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Bipolar Transistor, PNP, TO-220 2N6042
Electrical Characteristics: (Ta = +25°C unless otherwise specied)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage Vceo(sus)Ic = 100mA, Ib = 0 100 - - V
Collector Cutoff Current
Iceo IC = 0; VEB = 100V - - 20 uA
Icex
Vce = 100V, Vbe(off) = 1.5V - - 20 μA
Vcb = 100V, Vbe(off) = 1.5V
Tc = 150°c - - 0.2 mA
Emitter Cutoff Current Iebo Vbe = 5V, Ic = 0 - - 2 mA
ON Characteristics
DC Current Gain hfe
Ic = 3A, Vce = 4V 1,000 - 20,000 -
Ic = 8A, Vce = 4V 100 - - -
Collector-Emitter Saturation Voltage Vce(sat)
Ic = 3A, Ib = 12mA - - 2 V
Ic = 8A, Ib = 80mA - - 4 V
Base-Emitter ON Voltage Vbe(on)Ic = 4A, Vce = 4V - - 2.8 V
Dynamic Characteristics
Small-Signal Current Gain |hef| Ic = 3A, Vce = 4V, f =1MHz 4 - - -
Output Capacitance Cob Vcb = 10V, Ie = 0, f = 0.1MHz - - 300 pF
Dimensions Min. Max.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D - 0.9
E 1.15 1.4
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J - 0.56
K 12.7 14.73
L 2.8 4.07
M 2.03 2.92
N - 31.24
O 7°
Dimensions : Millimetres
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector
PNP