Vi Na) > + aaamamannemsemn anaes eR TECHNICAL DATA 2N2369AJAN, JTX, JTXV, JANS 2N3227JAN, JTX, JTXV 2N4449JAN, JTX, JTXV Processed per MIL-S-19500/317 NPN Silicon Small-Signal Transistors designed for general-purpose switching applications. MAXIMUM RATINGS Rating Symbol | 2N2369A | 2N3227 | 2Na449 | Unit Collactor-Emitter Voltage VCEO 15 20 16 Vde 2N2369A, 2N3227 CASE 22-03, STYLE 1 Hector [ Vi 4 Vi Collector-Emitter Voltage CES 40 0 40 de To: A(TO-18) Collector-Base Voltage VcBO 40 40 40 Vde Emitter-Base Voltage VEBO 45 6.0 45 Vdc Total Device Dissipation Pr @Ta=25C 360 i < mw Derate above 25C on 06 : mw : 1.2 15 Watts @Tc = 25C 6.85 6.85 a Derate above 25C. 2N444! t CASE 26-03 Operating Junction and Storage Ty, Tstg -65 to 200 c TO-206AB (TO-46) Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic | Symboi | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage! ') ViBRICEO | Vide (Ii = 10 mAde, Ip = 0} 2N2369A, 2N4449 15 2N3227 20 = Collector-Emitter Breakdown Voltage ViBRICES 40 = Vde (Ig = 10 wAde, Ie = 0) Collector-Base Breakdown Voltage V(BR}CBO 40 _ Vde (lg = 10 pAde, Ie = 0) Emitter-Base Breakdown Voltage Vi(BR}JEBO Vde (IE = 10 nAde, I = 0) 2N2369A, 2N4449 45 = 2N3227 60 Collector Cutoff Current IcBO wAde (VOB = 20 Vde, Ig = 0) - 02 (Vop = 20 Vde, Ie = 0, Ta = 150C) = 30 (1) Putsed. Pulse Width 250 10-350 ws, Duty Cycia 10 to 2.0% feantinused)2NZIUDIMUAN, CMNVELIVAN, CIO AT OONICS ELECTRICAL CHARACTERISTICS continued (T, = 25C unless otherwise noted.) Characteristic [| symboi [Min Max Unit OFF CHARACTERISTICS (continued) Collector Cutoff Current IceEx wAde (Voce = 10 Vde, Vee = 9.25 Vide) 03 (VoE = 10 Vie, Vae = 0.25 Vac, Ta = 125C) = 30 Collector Cutoff Current IcES a 0.4 wAde (Voce = 20 Vde, Ie = 0) Emitter Cutoff Current lERO 0.25 wAde (VBE = 4.0 Vde, Ic = 0) ON CHARACTERISTICS DC Current Gain'") FE _ (ic = 10 mAde, Vicg = 0.35 Vdc) 2N2369A, 2N4449 40 120 2N3227 70 250 (l = 30 mAdc, Voce = 0.4 Vdc) 2N2369A, 2N4449 30 120 2N3227 40 250 (lg = 10 mAde, VcE = 1.0 Vde) 2N2369A, 2N4449 40 120 2N3227 100 300 (lc = 100 mAde, Vcg = 1.0 Vde) 2N2369A, 2N4449 20 120 2N3227 30 150 (ig = 10 mAde, Veg = 1.0 Vde. Ta =-55C) 2N2369A, 2Nadag 20 = 2N3227 40 Collector-Emitter Saturation Voltage VcEtsat) Vdc (ig = 10 mAdc. Ig = 1.0 mAdc) - 02 (Ic = 30 mAdc, Ig = 3.0 mAdc) = 0.25 (ic = 100 mAdc. Ip = 10 mAdc) _ 0.45 lig = 10 mAde, Ig = 1.0 mAde, Ta = 125C) = 03 Base-Pmitter Saturation Voltage VBE(sat) Vde (lg = 10 mAde. Ip = 1 0 mAdc) o7 0.85 (lg = 30 mAdc, Ig = 3.0 mAdc) a 09 (Ie = 100 mAdc, Ig = 10 mAdc) 08 12 (Ig = 10 mAdc. Ig = 1.0 mAdc, Ta = 125C) 2N2369A. 2Naa49 bie a (lg = 10 mAde, Ig = 1.0 mAdc, Ta = 55C) 2N3227 = ; SMALL-SIGNAL CHARACTERISTICS Collector-Base Capacitance Cobo 4.0 pF (Voge = 5.0 Vdc, Ip = 0,1-91t01 0 MHz) Input Capacitance Ciba pF (VBE - 0.5 Vde, Ic =0,f-0.1101 0 MHz) 2N2369A, 2N4449 =e 5.0 2N3227 40 Small-Signal Current Transter Ratio, Magnitude Mfg! 5.0 10 (i- = 10 mAdc, Voge - 10 Vde. | = 100 MHz) SWITCHING CHARACTERISTICS (See Figures 12 and 13) Storage Time 2N2369A, 2N4449 ts, 13 ns 2@N3227 18 Turn-On Time {ton} 12 ns Turn Off Time AN2369A, 2N4449 | ott _ 18 ns | 2N3227 - 25 Oy) Poked Putse Width 750 0 950 jis Duty Cyeke 10 to ee2N2369AJAN, 2N3227JAN, 2N4449JAN SERIES ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Veg = 12 Vde Py = 360 mW 2N2369A, 2N3227, 300 mW 2N4449 initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current Ices O4 wAde (Voce = 20 Vdc) DC Current Gain(1) nee ae | 40 (lg = 10 wAde. VoE = 1.0 Vdc) a ey Delta from Pre-Burn-in Measured Values Min Max Delta Collector Cutoff Current Alces +100 % of Initial Value or #25 nave whichever is greater Delta DC Current Gain'") AhgE = 415 % of Initial Value (1) Pulsed. Pulse Width 250 to 350 ys. Duty Gycie 1.0 to 2.0% CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779