Spec.No.IGBT-SP-02006 R5
IGBT MODULE
MBN1800E17D
PRELIMINARY SPEC.
Silicon N-channel IGBT
Weight : 1300(g)
Unit in mm
OUTLINE DRAWING
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70°C, N>30,000cycles)
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item Symbol Unit MBN1800E17D
Collector Emitter Voltage VCES V 1,700
Gate Emitter Voltage VGES V ±20
DC IC 1,800
Collector Current 1ms ICp A 3,600
DC IF 1,800
Forward Current 1ms IFM A 3,600
Junction Temperature T
j oC -40 ~ +125
Storage Temperature T
stg oC -40 ~ +125
Isolation Voltage V
ISO V
RMS 4,000(AC 1 minute)
Terminals (M4/M8) - 2/10 (1)
Screw Torque Mounting (M6) - N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol Unit Min. Typ. Max. Test Conditions
- - 10 VCE=1,700V, VGE=0V, Tj=25oC
Collector Emitter Cut-Off Current I CES mA - 15 50 VCE=1,700V, VGE=0V, Tj=125oC
Gate Emitter Leakage Current IGES nA -500 - +500 VGE=±20V, VCE=0V, Tj=25oC
Collector Emitter Saturation Voltage VCE(sat) V - 2.7 3.3 IC=1,800A, VGE=15V, Tj=125oC
Gate Emitter Threshold Voltage VGE(TO) V 5.0 6.5 8.0 VCE=10V, IC=180mA, Tj=25oC
Input Capacitance Cies nF - 150 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Internal Gate Resistance Rge Ω - 0.6 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Rise Time tr - 0.7 1.4
Turn On Time ton - 1.2 2.4
Fall Time tf - 0.2 0.4
Switching Times
Turn Off Time toff
µs
- 1.5 3.0
VCC=900V, Ic=1,800A
L=55nH,CGE=180nF(TBD) (3)
RG=1.5Ω(TBD) (3)
VGE=±15V, Tj=125oC
Peak Forward Voltage Drop VFM V - 1.9 2.5 Ic=1,800A, VGE=0V, Tj=125oC
Reverse Recovery Time trr µs - 0.7 1.4
Turn On Loss Eon(10%) J/P - 0.48 0.77
Turn Off Loss Eoff(10%) J/P - 0.52 0.8
Reverse Recovery Loss Err(10%) J/P - 0.62 1.0
VCC=900V, Ic=1,800A
L=55nH,CGE=180nF(TBD) (3)
RG=1.5Ω(TBD) (3)
VGE=±15V, Tj=125oC
Stray inductance module LSCE nH - 12 -
IGBT Rth(j-c) - - 0.013
Thermal Impedance FWD Rth(j-c)
oC/W - - 0.022 Junction to case
Contact Thermal Impedance Rth(c-f) oC/W - 0.006 - Case to fin
Notes:(3) RG and CGE value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG and CGE value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
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