© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 4 1Publication Order Number:
BC182/D
BC182, BC182A, BC182B
Amplifier Transistors
NPN Silicon
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol BC182 Unit
Collector−Emitter Voltage VCEO 50 Vdc
Collector−Base Voltage VCBO 60 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.0
8.0 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient RqJA 357 °C/W
Thermal Resistance,
Junction−to−Case RqJC 125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3
2
1
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TO−92
CASE 29
STYLE 17
MARKING
DIAGRAM
COLLECTOR
1
2
BASE
3
EMITTER
Device Package Shipping†
ORDERING INFORMATION
BC182 TO−92 5000 Units / Box
BC182G TO−92
(Pb−Free) 5000 Units / Box
BC182A TO−92 5000 Units / Box
BC182B TO−92 5000 Units / Box
BC182BRL1 TO−92 2000 / Tape & Reel
BC
182x
AYWWG
G
BC182x = Device Code
x = A or B
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BC182AG TO−92
(Pb−Free) 5000 Units / Box
BC182BG TO−92
(Pb−Free) 5000 Units / Box
BC182BRL1G TO−92
(Pb−Free) 2000 / Tape & Reel
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BC182, BC182A, BC182B
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − V
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0) V(BR)CBO 60 − − V
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0) V(BR)EBO 6.0 − − V
Collector Cutoff Current
(VCB = 50 V, VBE = 0) ICBO − 0.2 15 nA
Emitter−Base Leakage Current
(VEB = 4.0 V, IC = 0) IEBO − − 15 nA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V) BC182
(IC = 2.0 mA, VCE = 5.0 V) BC182
BC182A
BC182B
(IC = 100 mA, VCE = 5.0 V) BC182
hFE 40
120
120
180
80
−
−
−
−
500
220
500
−
−
Collector−Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA) (Note 1)
VCE(sat) −
−0.07
0.2 0.25
0.6
V
Base−Emitter Saturation Voltage
(IC = 100 mA, IB = 5.0 mA) (Note 1) VBE(sat) − − 1.2 V
Base−Emitter On Voltage
(IC = 100 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V) (Note 1)
VBE(on) −
0.55
−
0.5
0.62
0.83
−
0.7
−
V
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz)
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT−
150
100
200
−
−
MHz
Common Base Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz) Cob − − 5.0 pF
Common Base Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cib − 8.0 − pF
Small−Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC182
BC182A
BC182B
hfe 125
125
240
−
−
−
500
260
500
−
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz) NF − 2.0 10 dB
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC182, BC182A, BC182B
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3
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = 10 V
TA = 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10
0
IC, COLLECTOR CURRENT (mAdc)
Figure 1. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 2. Current−Gain — Bandwidth Product
fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
VCE = 10 V
TA = 25°C
TA = 25°C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120 100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25°C
BC182, BC182A, BC182B
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4
PACKAGE DIMENSIONS
TO−92
TO−226AA
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC182/D
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