© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C - 100 V
VDGR TJ= 25C to 150C, RGS = 1M- 100 V
VGSS Continuous 15 V
VGSM Transient 25 V
ID25 TC= 25C - 76 A
IDM TC= 25C, Pulse Width Limited by TJM - 230 A
IATC= 25C - 38 A
EAS TC= 25C1J
PDTC= 25C 298 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220 & TO-247) 1.13 /10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-268HV 4.0 g
TO-247 6.0 g
DS100024C(9/15)
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTT76P10THV
IXTA76P10T
IXTP76P10T
IXTH76P10T
VDSS = - 100V
ID25 = - 76A
RDS(on)
25m
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Easy to Mount
Space Savings
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
D
S
G
G = Gate D = Drain
S = Source Tab = Drain
TO-268HV
(IXTT)
G
D (Tab)
S
TO-263 AA
(IXTA)
G
S
D (Tab)
GDS
TO-220AB
(IXTP)
D (Tab)
TO-247
(IXTH)
G
S
DD (Tab)
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250A -100 V
VGS(th) VDS = VGS, ID = - 250A - 2.0 - 4.0 V
IGSS VGS = 15V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V - 15 A
TJ = 125C - 750A
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 25 m
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 35 58 S
Ciss 13.7 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 890 pF
Crss 275 pF
td(on) 25 ns
tr 40 ns
td(off) 52 ns
tf 20 ns
Qg(on) 197 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 65 nC
Qgd 65 nC
RthJC 0.42C/W
RthCS TO-220 0.50 C/W
TO-247 0.21 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 76 A
ISM Repetitive, Pulse Width Limited by TJM - 304 A
VSD IF = - 38A, VGS = 0V, Note 1 -1.3 V
trr 70 ns
QRM 215 nC
IRM - 6 A
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
IF = - 38A, -di/dt = -100A/s
VR = - 50V, VGS = 0V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
-80
-70
-60
-50
-40
-30
-20
-10
0
-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5V
- 6V
- 7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
-280
-240
-200
-160
-120
-80
-40
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5V
- 6V
- 7V
- 8V
- 9V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
-80
-70
-60
-50
-40
-30
-20
-10
0
-3.2-2.8-2.4-2-1.6-1.2-0.8-0.40
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
No rmalized to I
D
= - 38A Value vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 76A
I
D
= - 38A
Fig. 5. R
DS(on)
Normalized to I
D
= - 3 8A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-240-200-160-120-80-400
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 7. Input Admittance
-140
-120
-100
-80
-60
-40
-20
0
-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= -10V
Fig. 8. Transconductance
0
20
40
60
80
100
-160-140-120-100-80-60-40-200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
V
DS
= -10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-240
-200
-160
-120
-80
-40
0
-1.5-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 50V
I
D
= - 38A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25µs
1ms 100µs
R
DS(on)
Limit 10ms
DC
-
-
-
---
-
100ms
© 2017 IXYS CORPORATION, All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 14. Resistiv e Turn-on Rise Time vs.
Drain Current
20
24
28
32
36
40
44
-76-72-68-64-60-56-52-48-44-40-36
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
0 2 4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
10
30
50
70
90
110
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 125
o
C, V
GS
= -10V
V
DS
= - 50V I
D
= - 76A, - 38A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
16
17
18
19
20
21
22
23
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
75
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
I
D
= - 38A
I
D
= - 76A
Fig. 17. Resistive Turn-off Switching Times vs .
Drain Current
34
38
42
46
50
54
58
62
66
-76-72-68-64-60-56-52-48-44-40-36
I
D
- Amperes
t
f
- Nanoseconds
16
17
18
19
20
21
22
23
24
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
T
J
= 125
o
C, 25
o
C
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
24
28
32
36
40
44
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 50V
I
D
= - 38A
I
D
= - 76A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
0 2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
0
60
120
180
240
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= -10V
V
DS
= - 50V
I
D
= - 38A, - 76A
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
IXYS REF: T_76P10T(A6)11-08-10-A
Fig. 19. Maximum Transient Thermal Impe da nce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
E
D1
E1
D2
A1
L1
P1
C
B
A
b
b2
b4
R
D
L
e
S
A
D
C
Q
1 2 3
4
A2
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
PINS:
1 - Gate 2 - Source
3 - Drain
TO-268HV Outline
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.