MJ10000 Transistors
NPN Darlington Transistor
Military/High-RelN
V(BR)CEO (V)350
V(BR)CBO (V)
I(C) Max. (A)20
Absolute Max. Power Diss. (W)175
Maximum Operating Temp (øC)200õ
I(CBO) Max. (A)5.0m»
@V(CBO) (V) (Test Condition)
h(FE) Min. Current gain.40
h(FE) Max. Current gain.400
@I(C) (A) (Test Condition)10
@V(CE) (V) (Test Condition)5.0
f(T) Min. (Hz) Transition Freq10M
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
V(CE)sat Max. (V)
@I(C) (A) (Test Condition)
@I(B) (A) (Test Condition)
t(d) Max. (s) Delay time.200n
t(r) Max. (s) Rise time600n
t(on) Max. (s) On time.
t(s) Max. (s) Storage time.3.5u
t(f) Max. (s) Fall time.2.4u
t(off) Max. (s) Off time
Semiconductor MaterialSilicon
Package StyleTO-204AA
Mounting StyleT
Pinout Equivalence Code3-4
Ckt. (Pinout) NumberTR00300004
Description